IRF7342TRPbF-1
HEXFET® Power MOSFET
VDS
-55
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
V
S1
1
8
D1
G1
2
7
D1
3
6
D2
4
5
D2
0.105
Ω
26
nC
S2
-3.4
A
G2
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7342PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7342TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
Units
-55
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
-55 to + 150
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambient
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Typ.
Max.
Units
–––
62.5
°C/W
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IRF7342TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-55
–––
–––
–––
-1.0
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250μA
-0.054 ––– V/°C Reference to 25°C, ID = -1mA
0.095 0.105
VGS = -10V, ID = -3.4A
Ω
0.150 0.170
VGS = -4.5V, ID = -2.7A
––– –––
V
VDS = VGS, ID = -250μA
––– –––
S
VDS = -10V, ID = -3.1A
––– -2.0
VDS = -55V, VGS = 0V
µA
––– -25
VDS = -55V, VGS = 0V, TJ = 55°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
26
38
ID = -3.1A
3.0 4.5
nC
VDS = -44V
8.4
13
VGS = -10V, See Fig. 10
14
22
VDD = -28V
10
15
ID = -1.0A
ns
43
64
RG = 6.0Ω
22
32
RD = 16Ω,
690 –––
VGS = 0V
210 –––
pF
VDS = -25V
86 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
-2.0
-27
–––
–––
–––
–––
54
85
-1.2
80
130
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 20mH
RG = 25Ω, IAS = -3.4A. (See Figure 8)
ISD ≤ -3.4A, di/dt ≤ -150A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2
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D
S
IRF7342TRPbF-1
100
100
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
10
-3.0V
1
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-3.0V
1
10
100
Fig 2. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-I D , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
V DS = -25V
20μs PULSE WIDTH
3
4
5
6
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
20μs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
VGS
-15V
-12V
-10V
-8.0V
-6.0V
-4.5V
-4.0V
-3.5V
BOTTOM -3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
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7
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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October 16, 2014
1.4
IRF7342TRPbF-1
ID = -3.4 A
R DS (on) , Drain-to-Source On Resistance(Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
0.240
0.200
VGS = -4.5V
0.160
0.120
VGS = -10V
0.080
0
2
TJ , Junction Temperature ( °C)
0.35
0.25
I D = -3.4 A
0.15
0.05
8
11
-V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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14
A
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on) , Drain-to-Source On Resistance ( Ω )
0.45
5
6
8
10
12
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
2
4
-ID , Drain Current (A)
300
ID
-1.5A
-2.7A
BOTTOM -3.4A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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150
IRF7342TRPbF-1
1200
-VGS , Gate-to-Source Voltage (V)
960
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
720
480
Coss
240
Crss
0
1
10
--VDS , Drain-to-Source Voltage (V)
VDS =-48V
VDS =-30V
VDS =-12V
16
12
8
4
0
100
ID = -3.1A
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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October 16, 2014
100
IRF7342TRPbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
E
0.25 [.010]
A
e
e1
MIN
1.35
1.75
A1 .0040
.0098
0.10
0.25
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
.0688
e1
6X
INCHES
MIN
.0532
A
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
6
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October 16, 2014
IRF7342TRPbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JE DEC JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7342PbF-1" to "IRF7342TRPbF-1" -all pages
• Removed the "IRF7342PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
7
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October 16, 2014