S
S
D
D
G
G
27
2
T-
SO
APT40M42JN 400V 86A 0.042Ω
S
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV ®
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT
40M42JN
UNIT
400
Volts
Drain-Source Voltage
86
Continuous Drain Current @ TC = 25°C
1
Amps
IDM, lLM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
Volts
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.52
W/°C
PD
TJ,TSTG
TL
344
and Inductive Current Clamped
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Characteristic / Test Conditions / Part Number
APT40M42JN
Drain-Source Breakdown Voltage
(VGS = 0V, I D = 250 µA)
On State Drain Current
MIN
TYP
MAX
400
Volts
2
APT40M42JN
86
Amps
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance
UNIT
2
0.042
APT40M42JN
Ohms
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
MAX
UNIT
Gate Threshold Voltage
(VDS = VGS, I D = 5.0mA)
2
THERMAL CHARACTERISTICS
Characteristic
MIN
RΘJC
Junction to Case
RΘCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
TYP
0.18
0.05
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-4038 Rev E
Symbol
APT40M42JN
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
11140
14000
Coss
Output Capacitance
VDS = 25V
2600
3640
Crss
Reverse Transfer Capacitance
f = 1 MHz
960
1440
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
VGS = 10V
507
760
VDD = 0.5 VDSS
70
105
ID = ID [Cont.] @ 25°C
234
350
VGS = 15V
21
40
3
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
41
80
ID = ID [Cont.] @ 25°C
62
95
RG = 0.6Ω
14
30
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
IS
MIN
APT40M42JN
86
APT40M42JN
344
UNIT
Amps
ISM
Pulsed Source Current
(Body Diode)
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/µs)
535
1070
ns
Q rr
Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/µs)
13
26
µC
TYP
MAX
UNIT
(VGS = 0V, IS = -ID [Cont.])
1.8
Volts
PACKAGE CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
LD
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
3
LS
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
5
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
CIsolation
Drain-to-Mounting Base Capacitance (f = 1MHz)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
nH
2500
Volts
70
pF
13
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.1
D=0.5
0.05
0.2
0.1
0.01
0.005
0.05
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-4038 Rev E
0.2
0.01
t1
t2
0.001
0.0005
10-5
SINGLE PULSE
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
in-lbs
APT40M42JN
200
200
160
6V
120
5.5V
80
5V
4.5V
40
ID, DRAIN CURRENT (AMPERES)
10V
160
8V
5.5V
80
5V
40
4.5V
4V
4V
0
0
120
TJ = +25°C
TJ = +125°C
80
40
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
ID, DRAIN CURRENT (AMPERES)
90
60
30
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
2.0
TJ = 25°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
= 10V @ 0.5 I [Cont.]
GS
D
1.5
VGS=10V
VGS=20V
1.0
0.5
0
100
200
300
400
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
40
80
120
160
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
200
6V
120
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-4038 Rev E
ID, DRAIN CURRENT (AMPERES)
VGS=15V
VGS=8, 10 & 15V
APT40M42JN
OPERATION HERE
LIMITED BY RDS (ON)
1mS
10
10mS
5
100mS
DC
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
5
10
50 100
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
D
VDS=80V
D
VDS=200V
16
Ciss
10,000
Coss
5,000
Crss
1,000
.1
I = I [Cont.]
C, CAPACITANCE (pF)
100µS
100
50
VDS=320V
12
8
4
0
50,000
10µS
0
200
400
600
800
1000
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
500
.1
.5
1
5
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
500
400
TJ =+150°C
100
50
TJ =+25°C
TJ =-55°C
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
* Source
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
050-4038 Rev E
* Source
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
Drain
Gate