IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS®-T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 3 (HBM) EIA/JESD22-A114-B Type Package Ordering Code Marking IPB100N06S3L-03 PG-TO263-3-2 SP0000-87978 3PN06L03 IPI100N06S3L-03 PG-TO262-3-1 SP0000-87979 3PN06L03 IPP100N06S3L-03 PG-TO220-3-1 SP0000-87977 3PN06L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 100 Unit A 100 Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse3) E AS I D=50 A 690 mJ Drain gate voltage2) V DG 55 V Gate source voltage4) V GS ±16 V Power dissipation P tot 300 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 0.5 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=78 A - 3.7 4.6 mΩ V GS=5 V, I D=78 A, SMD version - 3.4 4.3 V GS=10 V, I D=80 A - 2.5 3.0 V GS=10 V, I D=80 A, SMD version - 2.2 2.7 Rev. 1.0 page 2 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Parameter Symbol Values Conditions Unit min. typ. max. - 26240 - - 3290 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3140 - Turn-on delay time t d(on) - 39 - Rise time tr - 70 - Turn-off delay time t d(off) - 110 - Fall time tf - 77 - Gate to source charge Q gs - 99 - Gate to drain charge Q gd - 68 - Gate charge total Qg - 368 550 Gate plateau voltage V plateau - 3.5 - V - - 100 A - - 400 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=1.3 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=80 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 62 - ns Reverse recovery charge2) Q rr - 88 - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +16V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 1 Power dissipation 2 Drain current P tot=f(T C); V GS ≥ 4 V I D=f(T C); V GS ≥ 4 V 350 120 300 100 250 80 I D [A] P tot [W] 200 150 60 40 100 20 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs limited by on-state resistance 10 µs 0.5 100 µs 1 ms 100 10-1 I D [A] Z thJC [K/W] 0.1 10 0.05 10-2 0.01 single pulse 10-3 1 0.1 1 10 100 V DS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 400 10 3.5 V 9 8 5V 300 R DS(on) [mΩ] I D [A] 7 4.5 V 200 6 4V 5 4.5 V 4 5V 4V 6V 3 100 10 V 3.5 V 2 3V 1 0 0 0 2 4 6 8 0 20 40 60 80 100 120 140 180 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 200 5 -55 °C 25 °C 4 175 °C R DS(on) [mΩ] I D [A] 150 100 3 2 50 1 0 0 1 2 3 4 5 V GS [V] Rev. 1.0 -60 -20 20 60 100 T j [°C] page 5 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 3 2.5 Ciss 2300µA C [pF] V GS(th) [V] 2 1.5 230µA Coss 104 Crss 1 0.5 103 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 I F [A] I AV [A] 25°C 175 °C 150°C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 100°C 1 10 100 1000 t AV [µs] page 6 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 1400 66 64 1200 30 A 62 1000 60 V BR(DSS) [V] E AS [mJ] 40 A 800 50 A 600 58 56 54 52 400 50 200 48 0 46 0 50 100 150 200 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 80 A pulsed parameter: V DD 12 11 V 10 V GS 44 V Qg V GS [V] 8 6 4 2 Q gate Q gs Q gd 0 0 100 200 300 400 500 Q gate [nC] Rev. 1.0 page 7 2005-09-16 IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-09-16