Infineon IPP100N06S3L-03 Optimosâ®-t power-transistor Datasheet

IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
OptiMOS®-T Power-Transistor
Product Summary
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
V DS
55
V
R DS(on),max (SMD version)
2.7
mΩ
ID
100
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
EIA/JESD22-A114-B
Type
Package
Ordering Code
Marking
IPB100N06S3L-03
PG-TO263-3-2
SP0000-87978
3PN06L03
IPI100N06S3L-03
PG-TO262-3-1
SP0000-87979
3PN06L03
IPP100N06S3L-03
PG-TO220-3-1
SP0000-87977
3PN06L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
100
Unit
A
100
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse3)
E AS
I D=50 A
690
mJ
Drain gate voltage2)
V DG
55
V
Gate source voltage4)
V GS
±16
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
0.5
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area5)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=230 µA
1.2
1.7
2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=5 V, I D=78 A
-
3.7
4.6
mΩ
V GS=5 V, I D=78 A,
SMD version
-
3.4
4.3
V GS=10 V, I D=80 A
-
2.5
3.0
V GS=10 V, I D=80 A,
SMD version
-
2.2
2.7
Rev. 1.0
page 2
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
26240
-
-
3290
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
3140
-
Turn-on delay time
t d(on)
-
39
-
Rise time
tr
-
70
-
Turn-off delay time
t d(off)
-
110
-
Fall time
tf
-
77
-
Gate to source charge
Q gs
-
99
-
Gate to drain charge
Q gd
-
68
-
Gate charge total
Qg
-
368
550
Gate plateau voltage
V plateau
-
3.5
-
V
-
-
100
A
-
-
400
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=27.5 V,
V GS=10 V, I D=80 A,
R G=1.3 Ω
pF
ns
Gate Charge Characteristics2)
V DD=11 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
0.6
0.9
1.3
V
Reverse recovery time2)
t rr
V R=27.5 V, I F=I S,
di F/dt =100 A/µs
-
62
-
ns
Reverse recovery charge2)
Q rr
-
88
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 234 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +16V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
1 Power dissipation
2 Drain current
P tot=f(T C); V GS ≥ 4 V
I D=f(T C); V GS ≥ 4 V
350
120
300
100
250
80
I D [A]
P tot [W]
200
150
60
40
100
20
50
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
limited by on-state
resistance
10 µs
0.5
100 µs
1 ms
100
10-1
I D [A]
Z thJC [K/W]
0.1
10
0.05
10-2
0.01
single pulse
10-3
1
0.1
1
10
100
V DS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
400
10
3.5 V
9
8
5V
300
R DS(on) [mΩ]
I D [A]
7
4.5 V
200
6
4V
5
4.5 V
4
5V
4V
6V
3
100
10 V
3.5 V
2
3V
1
0
0
0
2
4
6
8
0
20
40
60
80
100
120
140
180
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 4V
R DS(on) = f(T j); I D = 80 A; V GS = 10 V
parameter: T j
200
5
-55 °C
25 °C
4
175 °C
R DS(on) [mΩ]
I D [A]
150
100
3
2
50
1
0
0
1
2
3
4
5
V GS [V]
Rev. 1.0
-60
-20
20
60
100
T j [°C]
page 5
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
3
2.5
Ciss
2300µA
C [pF]
V GS(th) [V]
2
1.5
230µA
Coss
104
Crss
1
0.5
103
0
-60
-20
20
60
100
140
0
180
5
10
T j [°C]
15
20
25
30
V DS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AV = f(t AV)
parameter: T j
parameter: T j(start)
103
1000
102
100
I F [A]
I AV [A]
25°C
175 °C
150°C
25 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
100°C
1
10
100
1000
t AV [µs]
page 6
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
1400
66
64
1200
30 A
62
1000
60
V BR(DSS) [V]
E AS [mJ]
40 A
800
50 A
600
58
56
54
52
400
50
200
48
0
46
0
50
100
150
200
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
12
11 V
10
V GS
44 V
Qg
V GS [V]
8
6
4
2
Q gate
Q gs
Q gd
0
0
100
200
300
400
500
Q gate [nC]
Rev. 1.0
page 7
2005-09-16
IPB100N06S3L-03
IPI100N06S3L-03, IPP100N06S3L-03
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2005-09-16
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