Wing MJE13005B Npn silicon transistor(electronic transformers , power swiching circuit) Datasheet

MJE13005B
NPN SILICON TRANSISTOR
ELECTRONIC TRANSFORMERS ,
POWER SWICHING CIRCUIT
o
ABSOLUTE MAXIMUM RATINGS ( TA=25 C )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
V
Collector-Emitter Voltage
VCEO
VEBO
700
400
9
4
Emitter-Base Voltage
Collector Current
Ic
Collector Power Dissipation
o
Ptot
Tamb=25 C
Tcase=25oC
Junction Temperature
Storage Temperature Range
V
V
A
1.5
W
75
Tj
Tstg
150
-55~+150
ELECTRICAL CHARACTERISTICS (TA=25oC )
Collector-Emitter Sustaining Voltage
V(BR)CEO
TEST CONDITION
Ic=1m A, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO
IE=0 , Ic=1m A
700
-
V
Emitter-Base Breakdown Voltage
V(BR) EBO
IE=1mA, IC=0
9
-
V
Collector Cut off current
ICBO
VCB=700V, IE=0
A
Collector-Emitter Cut off Current
ICEO
VCE=400V, IB=0
- 10 00
- 1000
Emitter-Base Cut off Voltage
IEBO
VEB=9V, Ic=0
-
A
CHARACTERISTIC
SYMBOL
MIN. MAX. UNIT
V
400
-
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter Voltage
Base-Emitter Saturation Voltage
Fall Time
hFE
VCE(sat)
V BE
V BE (sat)
Ic=2A
tf
Storage Time
ts
Freqency Characteristics
fT
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
V CE=5V, Ic=1A
Ic=1A, IB=0.25A
I E = 1A
Ic=21A, IB =0.25A
Ic=2A
IB1=-IB2=0.4A
10
-
_
V CE=10V, I C=0.5A, f=1MHz
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: [email protected]
1.0
1.25
V
V
1.2
V
0.9
S
4
S
-
IB1=- IB2=0.4A
5
-
40
_
_
A
1000
-
MHz
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