MACOM MAAP-000080-SMB004 Amplifier, power, 1 w 2-18 ghz Datasheet

MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (6-10V) Operation
®
♦ MSAG Process
Description
The MAAP-000080-DIE000 is a 2-stage 1 W distributed power amplifier
with on-chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ Electronic Warfare
♦ Ultra Wideband (UWB)
♦ Test Instrumentation
Also Available in:
SAMPLES
Description
Plastic
Sample Board (Die)
Mechanical Sample (Die)
Part Number
MAAP-000080-PKG003
MAAP-000080-SMB004
MAAP-000080-MCH000
Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130Ω
Parameter
1.
2.
Symbol
Typical
Units
Bandwidth
f
2.0-18.0
GHz
Output Power
POUT
30
dBm
1-dB Compression Point
P1dB
29.5
dBm
Small Signal Gain
G
11.5
dB
Power Added Efficiency
PAE
11
%
Input VSWR
VSWR
1.5:1
Output VSWR
VSWR
1.8:1
Gate Current
IGG
5
mA
Drain Current
IDD
800
mA
TB = MMIC Base Temperature
Adjust VGG between –2.6 and –1.2V to achieve specified Idq.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
Maximum Ratings3
Parameter
Symbol
Absolute Maximum
Units
Input Power
PIN
27.0
dBm
Drain Supply Voltage
VDD
+12.0
V
Gate Supply Voltage
VGG
-3.0
V
Quiescent Drain Current (No RF)
IDQ
0.78
A
Quiescent DC Power Dissipated (No RF)
PDISS
7.8
W
Junction Temperature
TJ
170
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
6.0
10.0
10.0
V
Gate Voltage
VGG
-2.6
-2.0
-1.2
V
Input Power
PIN
22.0
25.0
dBm
Thermal Resistance
ΘJC
13.1
MMIC Base Temperature
TB
°C/W
Note 5
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Power Derating Curve, Quiescent (No RF)
9
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2.7 V, VDD= 0 V.
Peak Power Dissipation (W)
8
7
6
5
4
3
2
2. Ramp VDD to desired voltage, typically 10.0 V.
1
3. Adjust VGG to set IDQ, (approximately @ –2.0 V).
0
4. Set RF input.
0
20
40
60
80
100
120
140
160
180
MMIC Base Temperature (ºC)
5. Power down sequence in reverse. Turn VGG off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
35
35
33
33
31
31
29
29
27
27
P1dB (dBm)
25
23
21
25
23
21
6V
19
6V
8V
10V
19
8V
17
17
10V
15
15
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency
at Pin = 22dBm, and IDSQ=740mA
Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=750mA
35
35
33
33
31
31
29
29
27
25
23
21
27
25
23
21
6V
8V
10V
19
17
-20ºC
50ºC
120ºC
19
17
15
15
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
2
3
4
5
6
7
8
Frequency (GHz)
11
12
13
14
15
16
17
18
35
6
6V
8V
10V
Input VSWR
Output VSWR
2.0
33
1.8
31
Output Power (dBm), SSG(dB), PAE
(%)
16
10
Figure 4. Saturated Output Power vs. Frequency and Temperature
at VD=10V and IDSQ=750mA.
20
18
9
Frequency (GHz)
Figure 3. Saturated Output Power vs. Frequency and Drain Voltage
29
5
1.6
Pout
SSG
PAE
IDS
27
14
25
12
23
4
VSWR
Gain (dB)
9
Frequency (GHz)
Psat (dBm)
Psat (dBm)
2
10
8
3
1.4
1.2
21
1.0
19
17
0.8
15
6
0.6
13
4
2
11
0.4
9
2
0.2
7
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
5
0
10
20
30
40
50
60
70
80
90
100
110
0.0
120
Frequency (GHz)
Junction Temperature (ºC)
Figure 5. Small Signal Gain and Input and Output VSWR at
IDSQ=750mA.
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 10V, 10GHz, and 750mA.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Drain Current (A)
Pout (dBm)
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
20
40
38
18
36
34
16
14
30
28
Gain (dB)
Output Power (dBm)
32
26
24
22
2 GHz
8 GHz
12 GHz
18 GHz
20
18
16
12
10
8
6
2 GHz
12 GHz
18 GHz
4
14
2
12
0
10
0
2
4
6
8
10
12
14
16
18
20
22
10
24
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Output Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 750mA
Figure 8. Gain vs. Output Power and Frequency at 10V and 750mA.
32
2.0
20
1.8
18
2 GHz
8 GHz
12 GHz
18 GHz
PAE (%)
14
1.6
1.4
Drain Current (A)
16
12
10
8
1.2
1.0
0.8
6
0.6
4
0.4
2
0.2
0
2 GHz
8 GHz
12 GHz
18 GHz
0.0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
18
20
22
Input Power (dBm)
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
IDSQ=750mA.
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 750mA.
40
24
20
38
18
36
34
16
14
30
28
Gain (dB)
Output Power (dBm)
32
26
24
22
2 GHz
8 GHz
12 GHz
18 GHz
20
18
16
12
10
8
6
4
2 GHz
12 GHz
18 GHz
14
2
12
10
0
0
2
4
6
8
10
12
14
16
18
20
22
24
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm)
Output Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 750mA.
Figure 12. Gain vs. Output Power and Frequency at 8V and 750mA.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
32
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
All Data is at 10ºC MMIC base temperature, CW stimulus, unless otherwise noted.
2.0
20
1.8
18
2 GHz
8 GHz
12 GHz
18 GHz
PAE (%)
14
1.6
1.4
Drain Current (A)
16
12
10
8
1.2
1.0
0.8
6
0.6
4
0.4
2
0.2
0
2 GHz
8 GHz
12 GHz
18 GHz
0.0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
16
18
20
22
Input Power (dBm)
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
IDSQ=750mA.
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 750mA
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
24
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
Mechanical Information
(124 x 124 x 3 mils)
76.46
VDD
Chip Size: 3.150 x 3.150 x 0.075 mm
124.02
84.96
OUT
24.63
IN
124.02
0.00
75.83
VGG
0.00
Chip edge to bond pad dimensions are shown to the center of the bond pad (mils).
Figure 1. Die Layout
Bond Pad Dimensions
Pad
Size (μm)
Size (mils)
RF In and Out
100 x 200
4x8
DC Drain Supply Voltage VDD
200 x 150
8x6
DC Gate Supply Voltage VGG
150 x 150
6x6
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MAAP-000080-DIE000
Amplifier, Power, 1 W
2-18 GHz
Rev Preliminary Datasheet
Assembly and Bonding Diagram
VDD
0.1 μF
100 pF
RFOUT
RFIN
100 pF
VGG
0.1 μF
130 Ω
Figure 2. Recommended operational configuration. Wire bond as shown.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C
to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or
wedge bonds. For best RF performance, use wedge bonds of shortest
length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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