isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BU120 DESCRIPTION ·Collector-Emitter Sustaining Voltage:VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-peak 15 A IB Base Current-Continuous 3.0 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.cn MAX UNIT 1.75 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BU120 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 2.5A 3.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 2.5A 2.2 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE DC Current Gain IC= 1A; VCE= 10V 30 Current-Gain—Bandwidth Product IC= 1A; VCE= 10V;ftest= 1MHz 6 fT isc website：www.iscsemi.cn CONDITIONS 2 MIN MAX UNIT 120 MHz