LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit (1 MB x 16) Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface • Optimized array blocking architecture – Two 4 k-word boot blocks – Six 4 k-word parameter blocks – Thirty-one 32 k-word main blocks – Top or bottom boot location • Enhanced cycling capability – 100 000 block erase cycles • Low power management – Deep power-down mode – Automatic power saving mode decreases ICC in static mode • Automated word write and block erase – Command user interface – Status register • ETOXTM∗ V nonvolatile flash technology • Packages – 48-pin TSOP Type I (TSOP048-P-1220) Normal bend/Reverse bend – 60-ball CSP (FBGA060/048-P-0811) IN IM The LH28F160BG-TL/BGH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F160BG-TL/ BGH-TL can operate at VCC and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F160BG-TL/BGH-TL offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs. • Smart 3 technology – 2.7 to 3.6 V VCC – 2.7 to 3.6 V or 12 V VPP • High performance read access time LH28F160BG-TL10/BGH-TL10 – 100 ns (2.7 to 3.6 V) LH28F160BG-TL12/BGH-TL12 – 120 ns (2.7 to 3.6 V) P R E ∗ ETOX is a trademark of Intel Corporation. COMPARISON TABLE VERSIONS LH28F160BG-TL LH28F160BGH-TL LH28F160BV-TL∗ LH28F160BVH-TL∗ BIT CONFIGURATION 1 MB x 16 OPERATING TEMPERATURE 0 to +70°C 1 MB x 16 –25 to +85°C 2 MB x 8/1 MB x 16 2 MB x 8/1 MB x 16 0 to +70°C –40 to +85°C ∗ Refer to the datasheet of LH28F160BV-TL/BVH-TL. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. -1- LH28F160BG-TL/BGH-TL PIN CONNECTIONS 48-PIN TSOP (Type I) 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 37 13 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 A16 NC GND DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND CE# A0 Y 47 3 R 48 2 A 1 28 21 27 22 26 23 25 24 IN A15 A14 A13 A12 A11 A10 A9 A8 NC RY/BY# WE# RP# VPP WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 TOP VIEW (TSOP048-P-1220) NOTE : IM Reverse bend available on request. 60-BALL CSP 1 2 3 4 5 6 7 8 9 10 11 12 NC NC A14 A13 A15 A16 GND NC NC NC NC A11 A10 A12 DQ15 DQ14 DQ7 C A8 NC A9 DQ6 DQ5 DQ13 D WE# RP# RY/BY# DQ12 VCC DQ4 E WP# VPP A19 DQ10 DQ11 DQ3 F A17 A18 A7 DQ1 DQ2 DQ9 G A5 A6 A4 OE# DQ8 DQ0 A2 A3 A1 A0 GND CE# NC NC NC L A NC P R E B H NC NC NC (FBGA060/048-P-0811) -2- LH28F160BG-TL/BGH-TL BLOCK ORGANIZATION Parameter Blocks : The boot block architecture includes parameter blocks to facilitate storage of frequently update small parameters that would normally require an EEPROM. By using software techniques, the byte-rewrite functionality of EEPROMs can be emulated. Each boot block component contains six parameter blocks of 4 k words (4 096 words) each. The parameter blocks are not write-protectable. This product features an asymmetrically-blocked architecture providing system memory integration. Each erase block can be erased independently of the others up to 100 000 times. For the address locations of the blocks, see the memory map in Fig. 1. Y Boot Blocks : The two boot blocks are intended to replace a dedicated boot PROM in a microprocessor or microcontroller-based system. The boot blocks of 4 k words (4 096 words) feature hardware controllable write-protection to protect the crucial microprocessor boot code from accidental modification. The protection of the boot blocks is controlled using a combination of the VPP, RP# and WP# pins. A R Main Blocks : The reminder is divided into main blocks for data or code storage. Each 16 M-bit device contains thirty-one 32 k words (32 768 words) blocks. IN BLOCK DIAGRAM DQ0-DQ15 ADDRESS COUNTER IM CE# WE# OE# RP# WP# COMMAND USER INTERFACE DATA MAIN BLOCKS -3- MAIN BLOCK 30 31 32 k-WORD MAIN BLOCK 29 MAIN BLOCK 1 RY/BY# WRITE Y GATING MAIN BLOCK 0 X VCC COMPARATOR Y DECODER DECODER DATA REGISTER REGISTER STATUS BOOT BLOCK 0 BOOT BLOCK 1 PARAMETER BLOCK 0 PARAMETER BLOCK 1 PARAMETER BLOCK 2 PARAMETER BLOCK 3 PARAMETER BLOCK 4 PARAMETER BLOCK 5 ADDRESS LATCH I/O LOGIC REGISTER L E R INPUT BUFFER P A0-A19 INPUT BUFFER IDENTIFIER MULTIPLEXER OUTPUT OUTPUT BUFFER STATE PROGRAM/ERASE MACHINE VOLTAGE SWITCH VPP VCC GND LH28F160BG-TL/BGH-TL PIN DESCRIPTION SYMBOL TYPE A0-A19 INPUT CE# are internally latched during a write cycle. DATA INPUT/OUTPUTS : Inputs data and commands during CUI write cycles; outputs INPUT/ data during memory array, status register and identifier code read cycles. Data pins float OUTPUT to high-impedance when the chip is deselected or outputs are disabled. Data is internally latched during a write cycle. INPUT CHIP ENABLE : Activates the device’s control logic, input buffers, decoders and sense amplifiers. CE#-high deselects the device and reduces power consumption to standby Y DQ0-DQ15 NAME AND FUNCTION ADDRESS INPUTS : Inputs for addresses during read and write operations. Addresses levels. RP# INPUT OE# INPUT WE# INPUT WP# INPUT R RESET/DEEP POWER-DOWN : Puts the device in deep power-down mode and resets internal automation. RP#-high enables normal operation. When driven low, RP# inhibits write operations which provide data protection during power transitions. Exit from deep power-down sets the device to read array mode. Block erase or word write with VIH < A RP# < VHH produce spurious results and should not be attempted. IN OUTPUT ENABLE : Gates the device’s outputs during a read cycle. WRITE ENABLE : Controls writes to the CUI and array blocks. Addresses and data are latched on the rising edge of the WE# pulse. WRITE PROTECT : Master control for boot blocks locking. When VIL, locked boot blocks cannot be erased and programmed. READY/BUSY : Indicates the status of the internal WSM. When low, the WSM is RY/BY# OUTPUT IM performing an internal operation (block erase or word write). RY/BY#-high-impedance indicates that the WSM is ready for new commands, block erase is suspended, and word write is inactive, word write is suspended, or the device is in deep power-down SUPPLY writing words. With VPP ≤ VPPLK, memory contents cannot be altered. Block erase and word write with an invalid VPP (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. E VPP L mode. BLOCK ERASE AND WORD WRITE POWER SUPPLY : For erasing array blocks or SUPPLY P GND SUPPLY R VCC NC DEVICE POWER SUPPLY : 2.7 to 3.6 V. Do not float any power pins. With VCC ≤ VLKO, all write attempts to the flash memory are inhibited. Device operations at invalid VCC voltage (see Section 6.2.3 "DC CHARACTERISTICS") produce spurious results and should not be attempted. GROUND : Do not float any ground pins. NO CONNECT : Lead is not internal connected; recommend to be floated. -4- LH28F160BG-TL/BGH-TL 1 INTRODUCTION A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase and word write operations. 1.1 A block erase operation erases one of the device’s 32 k-word blocks typically within 1.2 second (3.0 V VCC and VPP), independent of other blocks. Each block can be independently erased 100 000 times. Block erase suspend mode allows system software to suspend block erase to read data from, or write data to any other block. Y This datasheet contains LH28F160BG-TL/BGH-TL specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4 and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. LH28F160BG-TL/ BGH-TL flash memories documentation also includes ordering information which is referenced in Section 7. New Features R Key enhancements of LH28F160BG-TL/BGH-TL Smart 3 flash memories are : A • 2.7 V VCC and VPP Write/Erase Operation • Enhanced Suspend Capabilities • Boot Block Architecture 1.2 L IM • VPPLK has been lowered to 1.5 V to support 2.7 V block erase and word write operations. Designs that switch VPP off during read operations should make sure that the VPP voltage transitions to GND. • To take advantage of Smart 3 technology, allow VPP connection to 2.7 V or 12 V. Writing memory data is performed in word increments of the device’s 32 k-word blocks typically within 55 µs, 4 k-word blocks typically within 60 µs (3.0 V VCC and VPP). Word write suspend mode enables the system to read data from, or write data to any other flash memory array location. IN Note following important differences : Product Overview P R E The LH28F160BG-TL/BGH-TL are high-performance 16 M-bit Smart 3 flash memories organized as 1 024 k-word of 16 bits. The 1 024 k-word of data is arranged in two 4 k-word boot blocks, six 4 kword parameter blocks and thirty-one 32 k-word main blocks which are individually erasable insystem. The memory map is shown in Fig. 1. VPP at 2.7 V eliminates the need for a separate 12 V converter, while VPP = 12 V maximizes block erase and word write performance. In addition to flexible erase and program voltages, the dedicated VPP pin gives complete data protection when VPP ≤ VPPLK. -5- The boot block is located at either the top or the bottom of the address map in order to accommodate different micro-processor protect for boot code location. The hardware-lockable boot block provides complete code security for the kernel code required for system initialization. Locking and unlocking of the boot block is controlled by WP# and/or RP# (see Section 4.9 for details). Block erase or word write for boot block must not be carried out by WP# to low and RP# to VIH. The status register indicates when the WSM’s block erase or word write operation is finished. The RY/BY# output gives an additional indicator of WSM activity by providing both a hardware signal LH28F160BG-TL/BGH-TL of status (versus software polling) and status masking (interrupt masking for background block erase, for example). Status polling using RY/BY# minimizes both CPU overhead and system power consumption. When low, RY/BY# indicates that the WSM is performing a block erase or word write. RY/BY#-High-impedance indicates that the WSM is ready for a new command, block erase is suspended (and word write is inactive), word write is suspended, or the device is in deep power-down mode. The Automatic Power Saving (APS) feature substantially reduces active current when the device is in static mode (addresses not switching). In APS mode, the typical ICCR current is 3 mA at 2.7 V VCC. Y When CE# and RP# pins are at VCC, the ICC CMOS standby mode is enabled. When the RP# pin is at GND, deep power-down mode is enabled which minimizes power consumption and provides write protection during reset. A reset time (tPHQV) is required from RP# switching high until outputs are valid. Likewise, the device has a wake time (tPHEL) from RP#-high until writes to the CUI are recognized. With RP# at GND, the WSM is reset and the status register is cleared. P R E L IM IN A R The access time is 100 ns or 120 ns (tAVQV) at the VCC supply voltage range of 2.7 to 3.6 V over the temperature range, 0 to +70°C (LH28F160BG-TL)/ –25 to +85°C (LH28F160BGH-TL). -6- LH28F160BG-TL/BGH-TL Top Boot Bottom Boot P IM L E NOTES : BLOCK CONFIGURATION Top Boot Bottom Boot VERSIONS LH28F160BG-TTL LH28F160BGH-TTL LH28F160BG-BTL LH28F160BGH-BTL Fig. 1 Memory Map -7- 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 5 4 3 2 1 0 1 0 R Y 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Boot Block 4 k-Word Boot Block A FFFFF F8000 F7FFF F0000 EFFFF E8000 D7FFF D0000 DFFFF D8000 D7FFF D0000 CFFFF C8000 C7FFF C0000 BFFFF B8000 B7FFF B0000 AFFFF A8000 A7FFF A0000 9FFFF 98000 97FFF 90000 8FFFF 88000 87FFF 80000 7FFFF 78000 77FFF 70000 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF 50000 4FFFF 48000 47FFF 40000 3FFFF 38000 37FFF 30000 2FFFF 28000 27FFF 20000 1FFFF 18000 17FFF 10000 0FFFF 08000 07FFF 07000 06FFF 06000 05FFF 05000 04FFF 04000 03FFF 03000 02FFF 02000 01FFF 01000 00FFF 00000 IN 0 1 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 4 k-Word Boot Block 4 k-Word Boot Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 4 k-Word Parameter Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block 32 k-Word Main Block R FFFFF FF000 FEFFF FE000 FDFFF FD000 FCFFF FC000 FBFFF FB000 FAFFF FA000 F9FFF F9000 F8FFF F8000 F7FFF F0000 EFFFF E8000 E7FFF E0000 DFFFF D8000 D7FFF D0000 CFFFF C8000 C7FFF C0000 BFFFF B8000 B7FFF B0000 AFFFF A8000 A7FFF A0000 9FFFF 98000 97FFF 90000 8FFFF 88000 87FFF 80000 7FFFF 78000 77FFF 70000 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF 50000 4FFFF 48000 47FFF 40000 3FFFF 38000 37FFF 30000 2FFFF 28000 27FFF 20000 1FFFF 18000 17FFF 10000 0FFFF 08000 07FFF 00000 LH28F160BG-TL/BGH-TL 2 PRINCIPLES OF OPERATION software to suspend a word write to read data from any other flash memory array location. The LH28F160BG-TL/BGH-TL Smart 3 flash memories include an on-chip WSM to manage block erase and word write functions. It allows for : fixed power supplies during block erasure and word write, and minimal processor overhead with RAMlike interface timings. 2.1 R Y After initial device power-up or return from deep power-down mode (see Table 1 "Bus Operations"), the device defaults to read array mode. Manipulation of external memory control pins allow array read, standby and output disable operations. A When VPP ≤ VPPLK, memory contents cannot be altered. The CUI, with two-step block erase or word write command sequences, provides protection from unwanted operations even when high voltage is applied to VPP. All write functions are disabled when VCC is below the write lockout voltage VLKO or when RP# is at VIL. The device’s blocks locking capability provides additional protection from inadvertent code or data alteration by gating erase and word write operations. IN IM Status register and identifier codes can be accessed through the CUI independent of the VPP voltage. High voltage on VPP enables successful block erasure and word writing. All functions associated with altering memory contents—block erase, word write, status and identifier codes—are accessed via the CUI and verified through the status register. Data Protection Depending on the application, the system designer may choose to make the VPP power supply switchable (available only when memory block erases or word writes are required) or hardwired to VPPH1/2. The device accommodates either design practice and encourages optimization of the processor-memory interface. R E L Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the block erase and word write. The internal algorithms are regulated by the WSM, including pulse repetition, internal verification and margining of data. Addresses and data are internally latched during write cycles. Writing the appropriate command outputs array data, accesses the identifier codes or outputs status register data. P Interface software that initiates and polls progress of block erase and word write can be stored in any block. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads are again possible via the Read Array command. Block erase suspend allows system software to suspend a block erase to read/write data from/to blocks other than that which is suspended. Word write suspend allows system -8- 3 BUS OPERATION The local CPU reads and writes flash memory insystem. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. 3.1 Read Information can be read from any block, identifier codes or status register independent of the VPP voltage. RP# can be at either VIH or VHH. The first task is to write the appropriate read mode command (Read Array, Read Identifier Codes or Read Status Register) to the CUI. Upon initial device power-up or after exit from deep powerdown mode, the device automatically resets to read array mode. Five control pins dictate the data flow in and out of the component : CE#, OE#, WE#, RP# and WP#. CE# and OE# must be driven active to obtain data at the outputs. CE# is the LH28F160BG-TL/BGH-TL As with any automated device, it is important to assert RP# during system reset. When the system comes out of reset, it expects to read from the flash memory. Automated flash memories provide status information when accessed during block erase or word write modes. If a CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. SHARP’s flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU. device selection control, and when active enables the selected memory device. OE# is the data output (DQ0-DQ15) control and when active drives the selected memory data onto the I/O bus. WE# must be at VIH and RP# must be at VIH or VHH. Fig. 9 illustrates read cycle. Output Disable 3.4 Deep Power-Down 3.5 R Standby CE# at a logic-high level (VIH) places the device in standby mode which substantially reduces device power consumption. DQ0-DQ15 outputs are placed in a high-impedance state independent of OE#. If deselected during block erase or word write, the device continues functioning, and consuming active power until the operation completes. Read Identifier Codes The read identifier codes operation outputs the manufacture code and device code (see Fig. 2). Using the manufacture and device codes, the system CPU can automatically match the device with its proper algorithms. IN 3.3 Y With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins (DQ0-DQ15) are placed in a high-impedance state. A 3.2 IM RP# at VIL initiates the deep power-down mode. FFFFF In read modes, RP#-low deselects the memory, places output drivers in a high-impedance state and turns off all internal circuits. RP# must be held low for a minimum of 100 ns. Time tPHQV is required after return from power-down until initial memory access outputs are valid. After this wake-up interval, normal operation is restored. The CUI is reset to read array mode and status register is set to 80H. L Reserved for Future Implementation R E 00002 P -9- Device Code 00000 Manufacture Code Fig. 2 Device Identifier Code Memory Map 3.6 During block erase or word write modes, RP#-low will abort the operation. RY/BY# remains low until the reset operation is complete. Memory contents being altered are no longer valid; the data may be partially erased or written. Time tPHWL is required after RP# goes to logic-high (VIH) before another command can be written. 00001 Write Writing commands to the CUI enable reading of device data and identifier codes. They also control inspection and clearing of the status register. The Block Erase command requires appropriate command data and an address within the block to be erased. The Word Write command requires the command and address of the location to be written. LH28F160BG-TL/BGH-TL The CUI does not occupy an addressable memory location. It is written when WE# and CE# are active. The address and data needed to execute a command are latched on the rising edge of WE# or CE# (whichever goes high first). Standard microprocessor write timings are used. Fig. 10 and Fig. 11 illustrate WE# and CE# controlled write operations. 4 COMMAND DEFINITIONS When the VPP ≤ VPPLK, read operations from the status register, identifier codes, or blocks are enabled. Table 1 Bus Operations Output Disable Standby 3 3 VIH or VHH VIH or VHH Deep Power-Down 4 VIL Read Identifier Codes Write 8 VIH or VHH 3, 6, 7, 8 VIH or VHH CE# VIL OE# VIL WE# VIH ADDRESS X VIL VIH VIH X VIH X X X X X High Z High Z X X High Z High Z X X X X VIL VIH See Fig. 2 X VIL VIH VIL X X IN 4. 5. 6. 7. 8. E L IM Refer to Section 6.2.3 "DC CHARACTERISTICS". When VPP ≤ VPPLK, memory contents can be read, but not altered. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See Section 6.2.3 "DC CHARACTERISTICS" for VPPLK and VPPH1/2 voltages. RY/BY# is VOL when the WSM is executing internal block erase or word write algorithm. It is high-impedance when the WSM is not busy, in block erase suspend mode (with word write inactive), word write suspend mode or deep power-down mode. R 3. RY/BY# X X P 2. DQ0-15 DOUT VIL NOTES : 1. VPP X R NOTE RP# 1, 2, 3, 8 VIH or VHH A MODE Read Y Device operations are selected by writing specific commands into the CUI. Table 2 defines these commands. - 10 - (NOTE 5) High Z DIN X RP# at GND±0.2 V ensures the lowest deep powerdown current. See Section 4.2 for read identifier code data. VIH < RP# < VHH produce spurious results and should not be attempted. Refer to Table 2 for valid DIN during a write operation. Don’t use the timing both OE# and WE# are VIL. LH28F160BG-TL/BGH-TL Table 2 Command Definitions (NOTE 7) BUS CYCLES FIRST BUS CYCLE SECOND BUS CYCLE NOTE REQ’D. Oper (NOTE 1) Addr (NOTE 2) Data (NOTE 3) Oper (NOTE 1) Addr (NOTE 2) Data (NOTE 3) 1 ≥2 Read Status Register Clear Status Register 2 1 Block Erase 2 5 Write BA 20H Word Write Block Erase and 2 5, 6 Write WA 40H or 10H 1 5 Write X B0H 1 5 Write X D0H Word Write Suspend Block Erase and Word Write Resume 4 Write Write X X FFH 90H Write Write X X 70H 50H NOTES : A L IM 7. - 11 - IA ID Read X SRD Write BA D0H Write WA WD If the block is boot block, WP# must be at VIH or RP# must be at VHH to enable block erase or word write operations. Attempts to issue a block erase or word write to a boot block while WP# is VIH or RP# is VIH. Either 40H or 10H is recognized by the WSM as the word write setup. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used. IN 6. E 4. 5. R 3. Bus operations are defined in Table 1. X = Any valid address within the device. IA = Identifier code address : see Fig. 2. BA = Address within the block being erased. WA = Address of memory location to be written. SRD = Data read from status register. See Table 5 for a description of the status register bits. WD = Data to be written at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first). ID = Data read from identifier codes. Following the Read Identifier Codes command, read operations access manufacture and device codes. See Section 4.2 for read identifier code data. P 1. 2. Read R Read Array/Reset Read Identifier Codes Y COMMAND LH28F160BG-TL/BGH-TL 4.1 the falling edge of OE# or CE#, whichever occurs. OE# or CE# must toggle to VIH before further reads to update the status register latch. The Read Status Register command functions independently of the VPP voltage. RP# can be VIH or VHH. Read Array Command Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase or word write, the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend or Word Write Suspend command. The Read Array command functions independently of the VPP voltage and RP# can be VIH or VHH. Y R A Read Identifier Codes Command L IM The identifier code operation is initiated by writing the Read Identifier Codes command. Following the command write, read cycles from addresses shown in Fig. 2 retrieve the manufacture and device codes (see Table 3 for identifier code values). To terminate the operation, write another valid command. Like the Read Array command, the Read Identifier Codes command functions independently of the VPP voltage and RP# can be VIH or VHH. Following the Read Identifier Codes command, the following information can be read : E Table 3 Identifier Codes CODE ADDRESS Manufacture Code 00B0H 0068H 0069H 00001H 00001H Read Status Register Command P 4.3 R Device Code (Top Boot) Device Code (Bottom Boot) DATA 00000H The status register may be read to determine when a block erase or word write is complete and whether the operation completed successfully. It may be read at any time by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid command is written. The status register contents are latched on Clear Status Register Command Status register bits SR.5, SR.4, SR.3 or SR.1 are set to "1"s by the WSM and can only be reset by the Clear Status Register command. These bits indicate various failure conditions (see Table 5). By allowing system software to reset these bits, several operations (such as cumulatively erasing multiple blocks or writing several words in sequence) may be performed. The status register may be polled to determine if an error occurred during the sequence. To clear the status register, the Clear Status Register command (50H) is written. It functions independently of the applied VPP voltage. RP# can be VIH or VHH. This command is not functional during block erase or word write suspend modes. IN 4.2 4.4 4.5 Block Erase Command Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is first written, followed by a block erase confirm. This command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to FFFFH). Block preconditioning, erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written, the device automatically outputs status register data when read (see Fig. 3). The CPU can detect block erase completion by analyzing the output data of the RY/BY# pin or status register bit SR.7. When the block erase is complete, status register bit SR.5 should be checked. If a block erase error is detected, the status register should be cleared before system software attempts corrective actions. - 12 - LH28F160BG-TL/BGH-TL 4.6 Word Write Command R E L P When word write is complete, status register bit SR.4 should be checked. If word write error is detected, the status register should be cleared. The internal WSM verify only detects errors for "1"s that do not successfully write to "0"s. The CUI remains in read status register mode until it receives another command. R Block Erase Suspend Command The Block Erase Suspend command allows block erase interruption to read or word write data in another block of memory. Once the block erase process starts, writing the Block Erase Suspend command requests that the WSM suspend the block erase sequence at a predetermined point in the algorithm. The device outputs status register data when read after the Block Erase Suspend command is written. Polling status register bits SR.7 and SR.6 can determine when the block erase operation has been suspended (both will be set to "1"). RY/BY# will also transition to VOH. Specification tWHRH2 defines the block erase suspend latency. A IM Word write is executed by a two-cycle command sequence. Word write setup (standard 40H or alternate 10H) is written, followed by a second write that specifies the address and data (latched on the rising edge of WE#). The WSM then takes over, controlling the word write and write verify algorithms internally. After the word write sequence is written, the device automatically outputs status register data when read (see Fig. 4). The CPU can detect the completion of the word write event by analyzing the RY/BY# pin or status register bit SR.7. 4.7 IN This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Block Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable block erasure can only occur when VCC = VCC1 and VPP = VPPH1/2. In the absence of this high voltage, block contents are protected against erasure. If block erase is attempted while VPP ≤ VPPLK, SR.3 and SR.5 will be set to "1". Successful block erase for boot blocks requires that the corresponding if set, that WP# = VIH or RP# = VHH. If block erase is attempted to boot block when the corresponding WP# = VIL or RP# = VIH, SR.1 and SR.5 will be set to "1". Block erase operations with VIH < RP# < VHH produce spurious results and should not be attempted. Reliable word writes can only occur when VCC = VCC1 and VPP = VPPH1/2. In the absence of this high voltage, memory contents are protected against word writes. If word write is attempted while VPP ≤ VPPLK, status register bits SR.3 and SR.4 will be set to "1". Successful word write for boot blocks requires that the corresponding if set, that WP# = VIH or RP# = VHH. If word write is attempted to boot block when the corresponding WP# = VIL or RP# = VIH, SR.1 and SR.4 will be set to "1". Word write operations with VIH < RP# < VHH produce spurious results and should not be attempted. Y The CUI remains in read status register mode until a new command is issued. At this point, a Read Array command can be written to read data from blocks other than that which is suspended. A Word Write command sequence can also be issued during erase suspend to program data in other blocks. Using the Word Write Suspend command (see Section 4.8), a word write operation can also be suspended. During a word write operation with block erase suspended, status register bit SR.7 will return to "0" and the RY/BY# output will transition to VOL. However, SR.6 will remain "1" to indicate block erase suspend status. - 13 - LH28F160BG-TL/BGH-TL automatically outputs status register data when read (see Fig. 6). VPP must remain at VPPH1/2 (the same VPP level used for word write) while in word write suspend mode. RP# must also remain at VIH or VHH (the same RP# level used for word write). WP# must also remain at VIL or VIH (the same WP# level used for word write). The only other valid commands while block erase is suspended are Read Status Register and Block Erase Resume. After a Block Erase Resume command is written to the flash memory, the WSM will continue the block erase process. Status register bits SR.6 and SR.7 will automatically clear and RY/BY# will return to VOL. After the Erase Resume command is written, the device automatically outputs status register data when read (see Fig. 5). VPP must remain at VPPH1/2 (the same VPP level used for block erase) while block erase is suspended. RP# must also remain at VIH or VHH (the same RP# level used for block erase). WP# must also remain at VIL or VIH (the same WP# level used for block erase). Block erase cannot resume until word write operations initiated during block erase suspend have completed. Word Write Suspend Command R Y This Boot Block flash memory architecture features two hardware-lockable boot blocks so that the kernel code for the system can be kept secure while other blocks are programmed or erased as necessary. A 4.9.1 VPP = VIL FOR COMPLETE PROTECTION R E L IM The Word Write Suspend command allows word write interruption to read data in other flash memory locations. Once the word write process starts, writing the Word Write Suspend command requests that the WSM suspend the word write sequence at a predetermined point in the algorithm. The device continues to output status register data when read after the Word Write Suspend command is written. Polling status register bits SR.7 and SR.2 can determine when the word write operation has been suspended (both will be set to "1"). RY/BY# will also transition to high-impedance. Specification tWHRH1 defines the word write suspend latency. P At this point, a Read Array command can be written to read data from location other than that which is suspended. The only other valid commands while word write is suspended are Read Status Register and Word Write Resume. After Word Write Resume command is written to the flash memory, the WSM will continues the word write process. Status register bits SR.2 and SR.7 will automatically clear and RY/BY# will return to VOL. After the Word Write Resume command is written, the device Block Locking The VPP programming voltage can be held low for complete write protection of all blocks in the flash device. IN 4.8 4.9 4.9.2 WP# = VIL FOR BLOCK LOCKING The lockable blocks are locked when WP# = VIL; any program or erase operation to a locked block will result in an error, which will be reflected in the status register. For top configuration, the top two boot blocks are lockable. For the bottom configuration, the bottom two boot blocks are lockable. Unlocked blocks can be programmed or erased normally (Unless VPP is below VPPLK). 4.9.3 BLOCK UNLOCKING WP# = VIH or RP# =VHH unlocks all lockable blocks. These blocks can now be programmed or erased. WP# or RP# controls all block locking and VPP provides protection against spurious writes. Table 4 defines the write protection methods. - 14 - LH28F160BG-TL/BGH-TL Table 4 Write Protection Alternatives OPERATION VPP RP# WP# EFFECT VIL X VIL Block Erase or Word Write > VPPLK VHH VIH X X All Blocks Locked. All Blocks Locked. X All Blocks Unlocked. VIL 2 Boot Blocks Locked. VIH All Blocks Unlocked. Table 5 Status Register Definition ESS 6 ES 5 WWS 4 VPPS 3 WWSS 2 R 0 R NOTES : DPS 1 Y WSMS 7 Check RY/BY# or SR.7 to determine block erase or word write completion. SR.6-0 are invalid while SR.7 = "0". SR.7 = WRITE STATE MACHINE STATUS (WSMS) 1 = Ready A 0 = Busy SR.6 = ERASE SUSPEND STATUS (ESS) 1 = Block Erase Suspended IN 0 = Block Erase in Progress/Completed If both SR.5 and SR.4 are "1"s after a block erase attempt, an improper command sequence was entered. SR.5 = ERASE STATUS (ES) IM 1 = Error in Block Erase 0 = Successful Block Erase SR.4 = WORD WRITE STATUS (WWS) 1 = Error in Word Write 0 = Successful Word Write SR.3 = VPP STATUS (VPPS) L 1 = VPP Low Detect, Operation Abort 0 = VPP OK E SR.2 = WORD WRITE SUSPEND STATUS (WWSS) SR.3 does not provide a continuous indication of VPP level. The WSM interrogates and indicates the VPP level only after Block Erase or Word Write command sequences. SR.3 is not guaranteed to reports accurate feedback only when VPP ≠ VPPH1/2. 1 = Word Write Suspended 0 = Word Write in Progress/Completed R SR.1 = DEVICE PROTECT STATUS (DPS) 1 = WP# or RP# Lock Detected, Operation Abort P 0 = Unlock The WSM interrogates the WP# and RP# only after Block Erase or Word Write command sequences. It informs the system, depending on the attempted operation, if the WP# is not VIH, RP# is not VHH. SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.0 is reserved for future use and should be masked out when polling the status register. - 15 - LH28F160BG-TL/BGH-TL BUS OPERATION COMMAND Write D0H, Block Address Read Status Register Suspend Block Erase Loop No 0 Suspend Block Erase SR.7 = Yes 1 Write Erase Setup Data = 20H Addr = Within Block to be Erased Write Erase Confirm Data = D0H Addr = Within Block to be Erased Read Status Register Data Standby Check SR.7 1 = WSM Ready 0 = WSM Busy Repeat for subsequent block erasures. Full status check can be done after each block erase or after a sequence of block erasures. Write FFH after the last block erase operation to place device in read array mode. Block Erase Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 0 IM VPP Range Error Device Protect Error E SR.1 = 1 BUS OPERATION COMMAND L 1 0 1 R SR.4, 5 = Command Sequence Error P 0 SR.5 = 1 IN A Full Status Check if Desired SR.3 = Y Write 20H, Block Address COMMENTS R Start COMMENTS Standby Check SR.3 1 = VPP Error Detect Standby Check SR.1 1 = Device Protect Detect Standby Check SR.4, 5 Both 1 = Command Sequence Error Standby Check SR.5 1 = Block Erase Error SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple blocks are erased before full status is checked. If error is detected, clear the status register before attempting retry or other error recovery. Block Erase Error 0 Block Erase Successful Fig. 3 Automated Block Erase Flowchart - 16 - LH28F160BG-TL/BGH-TL BUS OPERATION COMMAND Write Word Data and Address Read Status Register Suspend Word Write Loop No 0 Suspend Word Write SR.7 = Yes Write Setup Word Write Data = 40H or 10H Addr = Location to be Written Write Word Write Data = Data to be Written Addr = Location to be Written Read Status Register Data Standby Check SR.7 1 = WSM Ready 0 = WSM Busy Repeat for subsequent word writes. SR full status check can be done after each word write or after a sequence of word writes. Write FFH after the last word write operation to place device in read array mode. 1 Word Write Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 0 IM VPP Range Error Device Protect Error E SR.1 = 1 BUS OPERATION COMMAND L 1 0 1 R SR.4 = IN A Full Status Check if Desired SR.3 = Y Write 40H or 10H, Address COMMENTS R Start Word Write Error COMMENTS Standby Check SR.3 1 = VPP Error Detect Standby Check SR.1 1 = Device Protect Detect Standby Check SR.4 1 = Data Write Error SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register command in cases where multiple locations are written before full status is checked. If error is detected, clear the status register before attempting retry or other error recovery. P 0 Word Write Successful Fig. 4 Automated Word Write Flowchart - 17 - LH28F160BG-TL/BGH-TL BUS OPERATION Write Write B0H Read Status Register 0 SR.7 = 1 Status Register Data Addr = X Standby Check SR.7 1 = WSM Ready 0 = WSM Busy Standby Check SR.6 1 = Block Erase Suspended 0 = Block Erase Completed Erase Resume Block Erase Completed Read or Word Write? Word Write Word Write Loop No IN Read Array Data Data = D0H Addr = X A 1 Read Data = B0H Addr = X R 0 Erase Suspend Read Write SR.6 = COMMENTS COMMAND Y Start Done? IM Yes Write D0H Write FFH Block Erase Resumed L Read Array Data P R E Fig. 5 Block Erase Suspend/Resume Flowchart - 18 - LH28F160BG-TL/BGH-TL BUS OPERATION Write Write B0H 0 SR.7 = 1 0 Word Write Completed 1 Status Register Data Addr = X Standby Check SR.7 1 = WSM Ready 0 = WSM Busy Standby Check SR.2 1 = Word Write Suspended 0 = Word Write Completed Read Array Word Write Resume Data = D0H Addr = X A Write Data = FFH Addr = X Read array locations other than that being written. Read IN Write FFH Read Array Data No IM Done Reading Data = B0H Addr = X Read Write SR.2 = Word Write Suspend Yes Write FFH Read Array Data E Word Write Resumed L Write D0H P R Fig. 6 Word Write Suspend/Resume Flowchart - 19 - Y Read Status Register COMMENTS COMMAND R Start LH28F160BG-TL/BGH-TL 5 DESIGN CONSIDERATIONS 5.1 issues; standby current levels, active current levels and transient peaks produced by falling and rising edges of CE# and OE#. Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 µF ceramic capacitor connected between its VCC and GND and between its VPP and GND. These high-frequency, low inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices, a 4.7 µF electrolytic capacitor should be placed at the array’s power supply connection between VCC and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductance. Three-Line Output Control The device will often be used in large memory arrays. SHARP provides three control inputs to accommodate multiple memory connections. Threeline control provides for : 5.2 RY/BY#, Block Erase and Word Write Polling R E L RY/BY# is a output that provides a hardware method of detecting block erase and word write completion. It transitions low after block erase or word write commands and returns to highimpedance when the WSM has finished executing the internal algorithm. P RY/BY# can be connected to an interrupt input of the system CPU or controller. It is active at all times. RY/BY# is also high-impedance when the device is in block erase suspend (with word write inactive), word write suspend or deep power-down modes. 5.3 Power Supply Decoupling Flash memory power switching characteristics require careful device decoupling. System designers are interested in three supply current R A 5.4 VPP Trace on Printed Circuit Boards IN IM To use these control inputs efficiently, an address decoder should enable CE# while OE# should be connected to all memory devices and the system’s READ# control line. This assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent unintended writes during system power transitions. POWERGOOD should also toggle during system reset. Y a. Lowest possible memory power consumption. b. Complete assurance that data bus contention will not occur. Updating flash memories that reside in the target system requires that the printed circuit board designers pay attention to the VPP power supply trace. The VPP pin supplies the memory cell current for word writing and block erasing. Use similar trace widths and layout considerations given to the VCC power bus. Adequate VPP supply traces and decoupling will decrease VPP voltage spikes and overshoots. 5.5 VCC, VPP, RP# Transitions Block erase and word write are not guaranteed if VPP falls outside of a valid VPPH1/2 range, VCC falls outside of a valid VCC1 range, or RP# ≠ VIH or VHH. If VPP error is detected, status register bit SR.3 is set to "1" along with SR.4 or SR.5, depending on the attempted operation. If RP# transitions to VIL during block erase or word write, RY/BY# will remain low until the reset operation is complete. Then, the operation will abort and the device will enter deep power-down. The aborted operation may leave data partially altered. Therefore, the command sequence must be repeated after normal operation is restored. Device power-off or RP# - 20 - LH28F160BG-TL/BGH-TL transitions to VIL clear the status register. 5.7 The CUI latches commands issued by system software and is not altered by VPP or CE# transitions or WSM actions. Its state is read array mode upon power-up, after exit from deep powerdown or after VCC transitions below VLKO. When designing portable systems, designers must consider battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory’s nonvolatility increases usable battery life because data is retained when system power is removed. R The device is designed to offer protection against accidental block erasure or word writing during power transitions. Upon power-up, the device is indifferent as to which power supply (VPP or VCC) powers-up first. Internal circuitry resets the CUI to read array mode at power-up. L IM A system designer must guard against spurious writes for VCC voltages above VLKO when VPP is active. Since both WE# and CE# must be low for a command write, driving either to VIH will inhibit writes. The CUI’s two-step command sequence architecture provides added level of protection against data alteration. A Power-Up/Down Protection IN 5.6 In addition, deep power-down mode ensures extremely low power consumption even when system power is applied. For example, portable computing products and other power sensitive applications that use an array of devices for solidstate storage can consume negligible power by lowering RP# to VIL standby or sleep modes. If access is again needed, the devices can be read following the tPHQV and tPHWL wake-up cycles required after RP# is first raised to VIH. See Section 6.2.4 through 6.2.6 "AC CHARACTERISTICS - READ-ONLY and WRITE OPERATIONS" and Fig. 9, Fig. 10 and Fig. 11 for more information. Y After block erase or word write, even after VPP transitions down to VPPLK, the CUI must be placed in read array mode via the Read Array command if subsequent access to the memory array is desired. Power Consumption P R E WP# provides additional protection from inadvertent code or data alteration. The device is disabled while RP# = VIL regardless of its control inputs state. - 21 - LH28F160BG-TL/BGH-TL 6 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings∗ Operating Temperature • LH28F160BG-TL During Read, Block Erase and Word Write ............................ 0 to +70°C (NOTE 1) Temperature under Bias............. –10 to +80°C NOTES : 1. Storage Temperature ........................ –65 to +125°C 2. Voltage On Any Pin (except VCC, VPP, and RP#) .. –0.5 V to VCC+0.5 V (NOTE 3) IM VPP Update Voltage during Block Erase and Word Write .................. –0.2 to +14.0 V (NOTE 3, 4) Operating temperature is for commercial product defined by this specification. Operating temperature is for extended temperature product defined by this specification. All specified voltages are with respect to GND. Minimum DC voltage is –0.5 V on input/output pins and – 0.2 V on VCC and VPP pins. During transitions, this level may undershoot to –2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins and VCC is VCC+0.5 V which, during transitions, may overshoot to VCC+2.0 V for periods < 20 ns. Maximum DC voltage on VPP and RP# may overshoot to +14.0 V for periods < 20 ns. Output shorted for no more than one second. No more than one output shorted at a time. IN VCC Supply Voltage ................. –0.2 to +3.9 V (NOTE 3) 3. R • LH28F160BGH-TL During Read, Block Erase and Word Write ........................ –25 to +85°C (NOTE 2) Temperature under Bias............. –25 to +85°C Y ∗WARNING : Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability. A 6.1 NOTICE : The specifications are subject to change without notice. Verify with your local SHARP sales office that you have the latest datasheet before finalizing a design. 5. L RP# Voltage ........................ –0.5 to +14.0 V (NOTE 3, 4) 4. Output Short Circuit Current............... 100 mA (NOTE 5) Operating Conditions E 6.2 SYMBOL PARAMETER Operating Temperature VCC1 VCC Supply Voltage R TA NOTE 1 MIN. 0 MAX. +70 –25 +85 3.6 2.7 UNIT ˚C ˚C VERSIONS LH28F160BG-TL LH28F160BGH-TL V 1. P NOTE : Test condition : Ambient temperature 6.2.1 CAPACITANCE (NOTE 1) TA = +25˚C, f = 1 MHz TYP. MAX. UNIT CIN SYMBOL Input Capacitance PARAMETER 7 10 pF VIN = 0.0 V COUT Output Capacitance 9 12 pF VOUT = 0.0 V NOTE : 1. Sampled, not 100% tested. - 22 - CONDITION LH28F160BG-TL/BGH-TL 6.2.2 AC INPUT/OUTPUT TEST CONDITIONS 2.7 1.35 INPUT 1.35 OUTPUT TEST POINTS 0.0 AC test inputs are driven at 2.7 V for a logic "1" and 0.0 V for a Logic "0". Input timing begins, and output timing ends, at 1.35 V. Input rise and fall times (10% to 90%) < 10 ns. Y Fig. 7 Transient Input/Output Reference Waveform for VCC = 2.7 to 3.6 V Test Configuration Capacitance Loading Value TEST CONFIGURATION VCC = 2.7 to 3.6 V R 1.3 V A 1N914 DEVICE UNDER TEST OUT CL IM CL Includes Jig Capacitance IN RL = 3.3 kΩ P R E L Fig. 8 Transient Equivalent Testing Load Circuit - 23 - CL (pF) 50 LH28F160BG-TL/BGH-TL 6.2.3 DC CHARACTERISTICS PARAMETER NOTE VCC = 2.7 to 3.6 V TYP. MAX. ILI Input Load Current 1 ±1 µA ILO Output Leakage Current 1 ±10 µA 25 ICCS VCC Standby Current 50 TEST CONDITIONS UNIT µA VCC = VCC Max. VIN = VCC or GND VCC = VCC Max. VOUT = VCC or GND CMOS Inputs VCC = VCC Max. CE# = RP# = VCC±0.2 V TTL Inputs 1, 3, 6 0.2 2 mA Y SYMBOL VCC = VCC Max. VCC Deep Power-Down Current 1 5 10 µA RP# = GND±0.2 V IOUT (RY/BY#) = 0 mA CMOS Inputs A ICCD R CE# = RP# = VIH VCC = VCC Max. VCC Read Current 1, 5, 6 VCC Word Write Current ICCE VCC Block Erase Current 1, 7 ICCWS VCC Word Write or Block Erase ICCES Suspend Current 1, 2 IPPR E VPP Deep Power-Down Current 1 P IPPD 1 IPPW IPPE VPP Word Write Current 1, 7 VPP Block Erase Current 1, 7 IPPWS VPP Word Write or Block Erase IPPES Suspend Current 1 IOUT = 0 mA TTL Inputs VCC = VCC Max. mA 17 mA 12 mA 17 mA VPP = 12.0±0.6 V VPP = 2.7 to 3.6 V 12 mA VPP = 12.0±0.6 V 6 mA CE# = VIH ±15 200 µA µA VPP ≤ VCC VPP > VCC 0.1 5 µA RP# = GND±0.2 V, VPP ≤ VCC 14 150 µA 12 40 mA RP# = GND±0.2 V, VPP > VCC VPP = 2.7 to 3.6 V 30 mA 11 35 mA VPP = 12.0±0.6 V VPP = 2.7 to 3.6 V 20 mA VPP = 12.0±0.6 V 200 µA VPP = VPPH1/2 1, 7 VPP Standby or Read Current R IPPS L ICCW CE# = GND f = 5 MHz 30 IM ICCR mA IN 25 ±2 10 10 - 24 - CE# = GND f = 5 MHz IOUT = 0 mA VPP = 2.7 to 3.6 V LH28F160BG-TL/BGH-TL 6.2.3 DC CHARACTERISTICS (contd.) VIL Input Low Voltage 7 VCC = 2.7 to 3.6 V MIN. MAX. – 0.5 0.8 VIH Input High Voltage 7 0.7VCC VOL Output Low Voltage 3, 7 VOH1 Output High Voltage (TTL) 3, 7 0.85VCC V VCC = VCC Min. IOH = –2.0 mA VOH2 Output High Voltage (CMOS) 3, 7 0.5 V VCC = VCC Min. IOH = –100 µA VPPH2 Normal Operations VPP Voltage during Word Write or 4, 7 Block Erase Operations VPP Voltage during Word Write or Block Erase Operations VLKO VCC Lockout Voltage VHH RP# Unlock Voltage V 11.4 12.6 IM VCC = VCC Min. IOL = 2.0 mA V V 5. 6. 7. 8. L E 3. 4. 3.6 9. R 2. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.0 V, VPP = 3.0 V and TA = +25˚C. These currents are valid for all product versions (packages and speeds). ICCWS and ICCES are specified with the device deselected. If reading or word writing in erase suspend mode, the device’s current draw is the sum of ICCWS or ICCES and ICCR or ICCW, respectively. Includes RY/BY#. Block erases and word writes are inhibited when VPP ≤ VPPLK, and not guaranteed in the range between VPPLK (max.) and VPPH1 (min.), between VPPH1 (max.) and VPPH2 (min.), and above VPPH2 (max.). V 2.7 P 1. 0.4 V 11.4 NOTES : V 1.5 1.3 8, 9 V VCC+0.3 Y VPP Lockout Voltage during TEST CONDITIONS UNIT R VPPH1 NOTE A VPPLK PARAMETER IN SYMBOL - 25 - 12.6 V Block Erase and Word Write for Boot Blocks Automatic Power Saving (APS) reduces typical ICCR to 3 mA at 2.7 V VCC in static operation. CMOS inputs are either VCC±0.2 V or GND±0.2 V. TTL inputs are either VIL or VIH. Sampled, not 100% tested. Boot block erases and word writes are inhibited when the corresponding RP# = VIH or WP# = VIL. Block erase and word write operations are not guaranteed with VIH < RP# < VHH and should not be attempted. RP# connection to a VHH supply is allowed for a maximum cumulative period of 80 hours. LH28F160BG-TL/BGH-TL 6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS (NOTE 1) • VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –25 to +85˚C LH28F160BG-TL10 LH28F160BG-TL12 LH28F160BGH-TL10 LH28F160BGH-TL12 UNIT VERSIONS PARAMETER NOTE tAVAV tAVQV Read Cycle Time Address to Output Delay tELQV tPHQV CE# to Output Delay RP# High to Output Delay tGLQV OE# to Output Delay 2 tELQX CE# to Output in Low Z 3 tEHQZ CE# High to Output in High Z 3 tGLQX OE# to Output in Low Z 3 tGHQZ OE# High to Output in High Z 3 tOH Output Hold from Address, CE# or OE# Change, Whichever Occurs First 3 MAX. 100 MIN. 100 10 45 0 R 50 0 20 0 IN IM L E R P 50 0 45 0 120 10 See AC Input/Output Reference Waveform (Fig. 7) for maximum allowable input slew rate. OE# may be delayed up to tELQV-tGLQV after the falling edge of CE# without impact on tELQV. Sampled, not 100% tested. - 26 - 120 Y 2 MAX. 120 100 NOTES : 1. 2. 3. MIN. A SYMBOL 0 ns ns ns µs ns ns ns ns 25 ns ns LH28F160BG-TL/BGH-TL Standby VIH Device Address Selection ADDRESSES (A) Data Valid Address Stable VIL tAVAV VIH CE# (E) tEHQZ VIL VIH Y OE# (G) tGHQZ VIL tGLQV tELQV VIL A tGLQX tELQX High Z Valid Output VOL tAVQV VCC tPHQV IM VIH IN VOH DATA (D/Q) (DQ0-DQ15) R VIH WE# (W) RP# (P) VIL P R E L Fig. 9 AC Waveform for Read Operations - 27 - tOH High Z LH28F160BG-TL/BGH-TL 6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (NOTE 1) • VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –25 to +85˚C LH28F160BG-TL10 LH28F160BG-TL12 LH28F160BGH-TL10 LH28F160BGH-TL12 UNIT VERSIONS SYMBOL PARAMETER tAVAV Write Cycle Time NOTE MIN. 100 2 10 0 tPHHWH RP# VHH Setup to WE# Going High tSHWH WP# VIH Setup to WE# Going High 2 2 100 100 tVPWH tAVWH VPP Setup to WE# Going High Address Setup to WE# Going High 2 3 100 50 tDVWH tWHDX Data Setup to WE# Going High Data Hold from WE# High 3 50 0 tWHAX Address Hold from WE# High 0 0 ns tWHEH tWHWL CE# Hold from WE# High WE# Pulse Width High 0 30 0 30 ns ns tWHRL tWHGL WE# High to RY/BY# Going Low Write Recovery before Read tQVVL VPP Hold from Valid SRD, RY/BY# High tQVPH tQVSL RP# VHH Hold from Valid SRD, RY/BY# High tPHWL tELWL RP# High Recovery to WE# Going Low CE# Setup to WE# Going Low tWLWH WE# Pulse Width ns 10 0 µs ns 50 ns 100 100 ns ns 100 50 ns ns 50 0 ns ns R A IN MAX. 0 ns ns 2, 4 0 0 ns 2, 4 0 0 ns WP# VIH Hold from Valid SRD, RY/BY# High 2, 4 0 0 ns Read timing characteristics during block erase and word write operations are the same as during read-only operations. Refer to Section 6.2.4 "AC CHARACTERISTICS" for read-only operations. Sampled, not 100% tested. Refer to Table 2 for valid AIN and DIN for block erase or word write. 4. IM 0 L E R P 2. 3. MIN. 120 Y 50 NOTES : 1. MAX. - 28 - 100 100 VPP should be held at VPPH1/2 (and if necessary RP# should be held at VHH) until determination of block erase or word write success (SR.1/3/4/5 = 0 : on Boot Blocks, SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks). LH28F160BG-TL/BGH-TL (NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6) VIH AIN AIN ADDRESSES (A) VIL tAVAV tAVWH tWHAX VIH CE# (E) VIL tWHEH tELWL tWHGL VIH OE# (G) VIL tWHQV1/2/3/4 Y tWHWL VIH WE# (W) High Z VIL DIN tWHRL High Z RY/BY# (R) VOL tQVSL tPHHWH tQVPH IN tSHWH VIH WP# (S) RP# (P) VIH VIL IM VIL VHH tVPWH tQVVL L VPPH1/2 Valid SRD DIN tPHWL A VIH DATA (D/Q) R tWLWH tDVWH tWHDX VIL VPP (V) VPPLK NOTES : R VCC power-up and standby. Write block erase or word write setup. Write block erase confirm or valid address and data. Automated erase or program delay. Read status register data. Write Read Array command. P 1. 2. 3. 4. 5. 6. E VIL Fig. 10 AC Waveform for WE#-Controlled Write Operations - 29 - DIN LH28F160BG-TL/BGH-TL 6.2.6 AC CHARACTERISTICS FOR CE#-CONTROLLED WRITE OPERATIONS (NOTE 1) • VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –25 to +85˚C LH28F160BG-TL10 LH28F160BG-TL12 LH28F160BGH-TL10 LH28F160BGH-TL12 UNIT NOTE MIN. MAX. MIN. MAX. 100 120 ns VERSIONS SYMBOL PARAMETER tAVAV Write Cycle Time tELEH tPHHEH tSHEH CE# Pulse Width RP# VHH Setup to CE# Going High WP# VIH Setup to CE# Going High tVPEH tAVEH 10 10 µs 0 0 ns 2 2 70 100 100 70 100 100 ns ns ns VPP Setup to CE# Going High Address Setup to CE# Going High 2 3 100 50 100 50 ns ns tDVEH Data Setup to CE# Going High 3 50 50 ns tEHDX Data Hold from CE# High 0 0 ns tEHAX Address Hold from CE# High 0 0 ns tEHWH tEHEL WE# Hold from CE# High CE# Pulse Width High 0 25 0 25 ns ns tEHRL CE# High to RY/BY# Going Low tEHGL tQVVL Write Recovery before Read VPP Hold from Valid SRD, RY/BY# High tQVPH tQVSL RP# VHH Hold from Valid SRD, RY/BY# High WP# VIH Hold from Valid SRD, RY/BY# High IN 100 ns 2, 4 0 0 ns ns 2, 4 2, 4 0 0 0 0 ns ns R E L 4. P 2. 3. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold, and inactive WE# times should be measured relative to the CE# waveform. Sampled, not 100% tested. Refer to Table 2 for valid AIN and DIN for block erase or word write. 100 0 0 IM NOTES : 1. 2 Y WE# Setup to CE# Going Low R RP# High Recovery to CE# Going Low tWLEL A tPHEL - 30 - VPP should be held at VPPH1/2 (and if necessary RP# should be held at VHH) until determination of block erase or word write success (SR.1/3/4/5 = 0 : on Boot Blocks, SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks). LH28F160BG-TL/BGH-TL (NOTE 1) (NOTE 2) (NOTE 3) (NOTE 4) (NOTE 5) (NOTE 6) VIH AIN ADDRESSES (A) VIL AIN tAVAV tAVEH tEHAX VIH WE# (W) VIL tEHWH tWLEL tEHGL VIH OE# (G) VIL tEHQV1/2/3/4 Y tEHEL VIH CE# (E) VIH High Z DATA (D/Q) DIN Valid SRD DIN tEHRL High Z RY/BY# (R) VOL A tPHEL VIL tQVSL tPHHEH tQVPH IN tSHEH VIH WP# (S) VHH VIH VIL IM VIL RP# (P) R tELEH tDVEH tEHDX VIL tVPEH tQVVL L VPPH1/2 VPP (V) VPPLK NOTES : R VCC power-up and standby. Write block erase or word write setup. Write block erase confirm or valid address and data. Automated erase or program delay. Read status register data. Write Read Array command. P 1. 2. 3. 4. 5. 6. E VIL Fig. 11 AC Waveform for CE#-Controlled Write Operations - 31 - DIN LH28F160BG-TL/BGH-TL 6.2.7 RESET OPERATIONS High Z RY/BY# (R) VOL VIH RP# (P) VIL tPLPH Y (A) Reset During Read Array Mode High Z RY/BY# (R) VOL R tPLRH VIH RP# (P) VIL A tPLPH (B) Reset During Block Erase or Word Write IN 2.7 V VCC tVPH VIL VIH RP# (P) IM VIL (C) RP# Rising Timing L Fig. 12 AC Waveform for Reset Operation Reset AC Specifications (NOTE 1) PARAMETER NOTE E SYMBOL RP# Pulse Low Time (If RP# is tied to VCC, this specification is not applicable) tPLRH tVPH RP# Low to Reset during Block Erase or Word Write VCC 2.7 V to RP# High 1. 2. P NOTES : R tPLPH These specifications are valid for all product versions (packages and speeds). If RP# is asserted while a block erase or word write operation is not executing, the reset will complete within 100 ns. 3. 4. - 32 - VCC = 2.7 to 3.6 V MIN. MAX. 100 2, 3 4 ns 22 100 UNIT µs ns A reset time, tPHQV, is required from the latter of RY/BY# or RP# going high until outputs are valid. When the device power-up, holding RP#-low minimum 100 ns is required after VCC has been in predefined range and also has been in stable there. LH28F160BG-TL/BGH-TL 6.2.8 BLOCK ERASE AND WORD WRITE PERFORMANCE (NOTE 3, 4) • VCC = 2.7 to 3.6 V, TA = 0 to +70°C or –25 to +85˚C PARAMETER Block Write Time tEHQV2 tWHRH1 tEHRH1 tWHRH2 tEHRH2 Block Erase Time 2 55 15 µs 60 1.8 30 0.6 µs s 32 k-Word Block 2 2 0.3 1.2 0.2 0.7 s s 4 k-Word Block 2 0.5 32 k-Word Block 4 k-Word Block Word Write Suspend Latency Time to Read 7.5 Erase Suspend Latency Time to Read 19.3 3. L E R - 33 - 0.5 8.6 23.6 s 6.5 7.5 µs 11.8 15 µs These performance numbers are valid for all speed versions. Sampled, not 100% tested. IN 4. IM Typical values measured at TA = +25˚C and VCC = 3.0 V, VPP = 3.0 V/VCC = 3.0 V, VPP = 12.0 V. Subject to change based on device characterization. Excludes system-level overhead. P 2. UNIT 2 2 NOTES : 1. VPP = 12.0±0.6 V MIN. TYP.(NOTE 1) MAX. A tWHQV2 32 k-Word Block 4 k-Word Block VPP = 2.7 to 3.6 V MIN. TYP.(NOTE 1) MAX. Y tWHQV1 Word Write Time tEHQV1 NOTE R SYMBOL LH28F160BG-TL/BGH-TL 7 ORDERING INFORMATION Product line designator for all SHARP Flash products L H 2 8 F 1 6 0 B G (H) E - T T L 1 0 Device Density 160 = 16 M-bit Access Speed (ns) 10 : 100 ns (2.7 to 3.6 V) 12 : 120 ns (2.7 to 3.6 V) Architecture B = Boot Block Y Limited Voltage Option TL = 2.7 to 3.6 V VCC Only Power Supply Type G = Smart 3 Technology R Block Locate Option T = Top Boot B = Bottom Boot Operating Temperature Blank = 0 to +70°C H = –25 to +85°C ORDER CODE VALID OPERATIONAL COMBINATIONS VCC = 2.7 to 3.6 V IM OPTION IN A Package E = 48-pin TSOP (I) (TSOP048-P-1220) Normal bend R = 48-pin TSOP (I) (TSOP048-P-1220) Reverse bend B = 60-ball CSP (FBGA060/048-P-0811) 50 pF load, LH28F160BGXX-XTL10 2 LH28F160BGXX-XTL12 120 ns P R E L 1 1.35 V I/O Levels 100 ns - 34 - PACKAGING 48 24 0.1 12.0 ±0.2 0.10 0.5 TYP. M 1 48 _ 0.2±0.08 48 TSOP (TSOP048-P-1220) 25 1.2MAX. 1.0 ±0.1 0.125 18.4 ±0.2 Package base plane 19.0 ±0.1 0.1±0.1 0.125 ±0.05 20.0±0.3 PACKAGING 60 CSP (FBGA060/048-P-0811) A 1.2MAX. 8.00 + 0.2 B ∗0.4TYP. / / 0.1 S S ∗Land hole diameter 0.35±0.05 for ball mounting + 0.2 11.00 0.1 S C 0.4TYP. 0.8TYP. 1.2TYP. 1.1TYP. 0.8TYP. 0.4TYP. H D A 12 1 0.45±0.03 0.30 M S AB 0.15 M S CD