LED Chip Infrared Product No: Radiation Infrared Type AlGaAs Electrodes N (cathode) up Typ280 UNIT:um N Electrode OPC8700-28 Φ110 N AlGaAs Cladding Layer GaAs Active Layer Typ150 Emission Area P AlGaAs Cladding Layer P Electrode Physical Characteristics & Structure Material: AlGaAs Bond Pad Size: 110um diameter Junction Size: 280um x 280um Anode Metalization: Gold Alloy Thickness: 150um Cathode Metalization: Gold Alloy Electrical & Optical Characteristics (Ta = 25ºC) ITEMS SYMBOL Forward Voltage Reverse Voltage Radiant Power* Peak Wavelength Spectral Bandwidth at 50% Rise Time Fall Time Peak Forward Voltage Vf Vr Φe λp ∆λ0.5 Tr Tf Vfm CONDITIONS MIN TYP If=20mA -Ir=10uA 5 If=20mA 4.0 If=20mA 850 If=20mA -Ifp=100mA Tw=125ns, Duty=25% -Ifp=100mA Tw=125ns, Duty=25% -Ifp=400mA Tw=100us, Duty=10% -- ---870 45 20 20 3.1 MAX 1.7 --900 ----- UNIT V V mW nm nm ns ns V * LED chip is mounted on TO-18 gold header without resin coated. Absolute Maximum Ratings (Ta = 25ºC) Continuous Maximum Forward Current: 70mA (DC) Reverse Voltage: 5V (IR=10uA) Storage Temperature while on mylar membrane: 0 to 40 ºC after removal from mylar membrane: -30 to 100 ºC We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: www.marktechopto.com 518-785-4725 • EMAIL: [email protected] 1