HSMC HML1225 0.8a 300.380 voltage scrs igt<200ua Datasheet

HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 1/2
MICROELECTRONICS CORP.
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HML1225/HXL1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate
Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Part No.
HXL1225
HML1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
Min
380
300
0.8
0.5
Max
-
Unit
Test Conditions
V
Tj=40°C to 125°C (RGK=1K)
V
A TC=40°C
A Half Cycle=180°,TC=40°C
VGRM
8
-
V
IGR=10uA
IGM
PG(AV)
Tj
Tstg
Tsld
1
0.1
-40
-40
-
125
125
250
A
W
°C
°C
°C
10us max
20ms max
1.6mm from case 10s max
Classification Of IGT
Rank
HML1225
HXL1225
AA
10-18 uA
10-18 uA
AB
12-23 uA
12-23 uA
AC
17-28 uA
17-28 uA
AD
22-55 uA
22-55 uA
B
45-105 uA
45-105 uA
C
95-155 uA
Electrical Characteristics (Ta=25°C)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
HML1225, HXL1225
Symbol Min Max Unit
Test Conditions
IDRM
0.1 mA @VDRM (RGK=1K), Tj=125°C
IDRM
5
uA @VDRM (RGK=1K), Tj=25°C
1.4
V
at IT=0.4A, Tj=25°C
VT
2.2
V
at IT=0.8A, Tj=25°C
VT(TO) 0.95 V
Tj=125°C
rT
600 Ohm Tj=125°C
IGT
200 uA VD=7V
VGT
0.8
V
VD=7V
IH
5
mA RGK=1K(ohm)
IL
6
mA RGK=1K(ohm)
dv/dt
25
V/us VD=0.67*VDRM(RGK=1K), Tj=125°C
di/dt
30
A/us IG=10mA,diG/dt=0.1A/us, Tj=125°C
tgd
500 ns IG=10mA,diG/dt=0.1A/us
Tc=85°C,VD=0.67*VDRM
tg
200 us
VR=35V,IT=IT(AV)
100
K/W
Rθjc
K/W
Rθja 200
HSMC Product Specification
HI-SINCERITY
Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 2/2
MICROELECTRONICS CORP.
TO-92 Dimension
α2
A
Marking :
HSMC Logo
B
1 2
Product Series
Part Number
3
Date Code
Rank
α3
C
Laser Mark
HSMC Logo
Product Series
D
Part Number
H
I
G
Ink Mark
α1
Style : Pin 1.Cathode 2.Gate 3. Anode
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code : A
*:Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
HML1225, HXL1225
HSMC Product Specification
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