IP IPT12Q08-CEF High current density due to double mesa technology Datasheet

IPT12Q08-xxF
IP Semiconductor Co., Ltd.
High current density due to double mesa technology; SIPOS
and Glass Passivation. IPT12Q08-xx series are suitable for
general purpose AC Switching. They can be used as an
ON/OFF function In application such as static relays,
heating regulation, Induction motor stating circuits… or
for phase Control operation light dimmers, motor speed
Controllers.
The IPT12Q08-xxF(Insulated version) series are isolated
internally, they provided a 2500V RMS isolation voltage from
all three terminals to external heatsink..
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
12
A
VDRM / VRRM
800
V
VTM
≤ 1.55
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Junction Temperature Range
Operating Junction Temperature Range
Symbol
Value
Unit
Tstg
Tj
-40 to +150
-40 to +125
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
VDRM
VRRM
800
800
V
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
VDSM
VRSM
900
900
V
RMS on–state current
(Full sine wave)
Tc = 79 ℃
IT(RMS)
12
A
ITSM
126
120
A
I²t
78
A²s
dI / dt
50
A/us
IGM
4
A
PG(AV)
1
W
Non repetitive surge peak on–state Current
(full cycle, Tj = 25℃)
I²t Value for fusing
f = 60Hz t = 16.7ms
f = 50 Hz t = 20ms
tp = 10ms
Critical Rate of rise of on-state current
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃
Peak gate current
tp = 20us, Tj = 125 ℃
Average gate power dissipation
Tj = 125 ℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
1
IPT12Q08-xxF
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified)
Symbol
Test Condition
IGT
VD = 12V RL = 30Ω
VGT
VGD
IPT12Q08-xx F
Quadrant
VD=VDRM, RL=3.3KΩ,
Tj = 125 ℃
dV/dt
25
50
50
100
ALL
MAX
1.3
V
ALL
MIN
0.2
V
IG = 1.2 IGT
40
50
80
100
mA
MAX
mA
IT = 100mA
MAX
25
50
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
200
400
V/us
-
-
-
-
-
-
(dV/dt) c=0.1V/us Tj = 125 ℃
(dI/dt)c
Unit
MAX
II
IH
BE
I – II – III
IV
I – III – IV
IL
CE
(dV/dt) c=10V/us Tj = 125 ℃
MIN
Without snubber Tj = 125 ℃
A/ms
STATIC CHARACTERISTICS
Symbol
Test Conditions
Value(MAX)
Unit
VTM
ITM = 17A, t p = 380uS
Tj = 125 ℃
1.55
V
IDRM
VD = VDRM
Tj = 125 ℃
5
uA
IRRM
VR = VRRM
Tj = 125 ℃
1
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case(AC)
3.3
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
2
IPT12Q08-xxF
PACKAGE MECHANICAL DATA
TO-220F
Dimensions
Ref
Millimeters
Min
Typ
Inches
Max
Min
4.8
0.173
0.83
0.029
Typ
Max
A
4.4
B
0.74
C
0.5
0.75
0.020
0.030
C2
2.4
2.7
0.094
0.106
C3
2.6
3
0.102
0.118
D
8.8
9.3
0.346
0.367
E
9.7
10.3
0.382
0.406
F
6.4
6.8
0.252
0.268
G
5
5.2
0.197
0.205
H
28.0
29.8
11.0
11.7
L1
L2
0.8
3.63
1.14
0.189
0.031
0.033
0.143
1.7
0.044
0.067
L3
3.3
0.130
V1
40º
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, [email protected]
3
IPT12Q08-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, [email protected]
4
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