PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -11 -7.0 -50 75 0.60 ±20 81 -11 7.5 -5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 11.5 (typical) C g For footnotes refer to the last page www.irf.com 1 01/22/01 IRF9130 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 Typ Max Units — — V — -0.087 — V/°C — — -2.0 3 — — — — — — — — 0.30 0.35 -4.0 — -25 -250 Ω VGS(th) gfs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.1 -100 100 29 7.1 21 60 140 140 140 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 860 350 125 — — RDS(on) Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, I D = -1.0mA nC VGS =-10V, ID =-7.0A➃ VGS =-10V, ID =-11A ➃ VDS = VGS, ID =-250µA VDS >-15V, IDS =-7.0A➃ VDS=-80V, VGS=0V VDS =-80V VGS = 0V, TJ = 125°C VGS =-20V VGS =-20V VGS =-10V, ID=-11A VDS =-50V ns VDD =-50V, ID =-11A, RG =7.5Ω V S( ) Ω BVDSS ∆BV DSS/∆TJ µA nA nH Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS =25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -11 -50 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -4.7 250 3.0 V nS µc ton Forward Turn-On Time Test Conditions Tj = 25°C, IS =-11A, VGS = 0V ➃ Tj = 25°C, IF =-11A, di/dt ≤-100A/µs VDD ≤-50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC R thJA Junction to Case Junction-to-Ambient Min Typ Max Units — — — — 1.67 30 Test Conditions °C/W soldered to a 2” square copper-clad board For footnotes refer to the last page 2 www.irf.com IRF9130 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF9130 13 a& b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF9130 RD V DS VGS D.U.T. RG + V DD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Fig 11. www.irf.com Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 IRF9130 L VDS D .U .T RG VD D IA S -20V -10V A D R IV E R 0.01 Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ -12V 12V .2µF .3µF -10V QGS QGD VG D.U.T. +VDS VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRF9130 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD =-25V, starting TJ = 25°C, Peak IL = -11A, ➂ ISD ≤-11A, di/dt ≤-140A/µs, VDD≤ -100V, TJ ≤ 150°C Suggested RG =7.5 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions —TO-204AA (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 1/01 www.irf.com 7