BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 200 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.7 to 2.9 32 350 13.5 50 20 6 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage of 32 V, an IDq of 200 mA, a tp of 300 μs with δ of 10 %: Output power = 350 W Power gain = 13.5 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for S-band operation (2.7 GHz to 2.9 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency range BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS7G2729L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 2 1 5 2 3 4 3 sym112 [1] source BLS7G2729LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 1 1 2 5 3 2 3 4 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLS7G2729L-350P Name Description Version - flanged balanced LSMOST ceramic package; 2 mounting holes; 4 leads SOT539A earless flanged balanced LSMOST ceramic package; 4 leads SOT539B BLS7G2729LS-350P - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLS7G2729L-350P_LS-350P Objective data sheet Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 33 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 2 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Zth(j-mb) Conditions transient thermal impedance from junction to mounting base Typ Unit Tcase = 85 °C; PL = 150 W tp = 100 μs; δ = 10 % <tbd> K/W tp = 200 μs; δ = 10 % <tbd> K/W tp = 300 μs; δ = 10 % <tbd> K/W tp = 100 μs; δ = 20 % <tbd> K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 34 39 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 11.0 A - 16.2 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 0.065 - Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 200 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. BLS7G2729L-350P_LS-350P Objective data sheet Symbol Parameter Conditions PL output power VCC supply voltage PL = 350 W Gp power gain PL = 350 W RLin input return loss PL = 350 W PL(1dB) output power at 1 dB gain compression ηD drain efficiency PL = 350 W Pdroop(pulse) pulse droop power PL = 350 W - tr rise time PL = 350 W - tf fall time PL = 350 W - 6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 Min Typ Max Unit - 350 - W - - 32 V 12 13.5 - dB - −10 - dB - <tbd> - W 45 50 - % 0 0.3 dB 20 50 ns 50 ns © NXP B.V. 2011. All rights reserved. 3 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.7 <tbd> <tbd> 2.8 <tbd> <tbd> 2.9 <tbd> <tbd> drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 200 mA; PL = 350 W; tp = 300 μs; δ = 10 %. BLS7G2729L-350P_LS-350P Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 4 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 2. EUROPEAN PROJECTION Package outline SOT539A BLS7G2729L-350P_LS-350P Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 5 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor Earless flanged balanced LDMOST ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) mm mm w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 e 4.2 11.56 0.10 30.94 30.96 9.3 9.27 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.77 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA Issue date 10-02-02 11-02-17 SOT539B Fig 3. sot539b_po European projection Package outline SOT539B BLS7G2729L-350P_LS-350P Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 6 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 9. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS7G2729L-350P_LS-350P v.1 20110524 Objective data sheet - - BLS7G2729L-350P_LS-350P Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 7 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved. 8 of 10 BLS7G2729L(S)-350P NXP Semiconductors LDMOS S-band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLS7G2729L-350P_LS-350P Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 24 May 2011 © NXP B.V. 2011. All rights reserved. 9 of 10 NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 Handling information. . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 May 2011 Document identifier: BLS7G2729L-350P_LS-350P