NTE2302 Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode Features: D High Breakdown Voltage and High Reliability D High Switching Speed D Capable of Being Mounted in a Variety of Methods Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 – 130 mA DC Current Gain hFE VCE = 5V, IC = 1A 8 – – fT VCE = 10V, IC = 1A – 3 – MHz Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A – – 5.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A – – 1.5 V Current Gain–Bandwidth Product Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 1500 – – V Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100mA, RBE = ∞ 800 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 200mA, IC = 0 7 – – V IEC = 5A – – 2 V VCC = 200V, IC = 4A, IB1 = 0.8A, IB2 = –1.6A, RL = 50Ω – – 0.7 µs Diode Forward Voltage Fall Time VF tf .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)