BVDSS = 900 V RDS(on) typ ȍ HFD2N90/HFU2N90 ID = 2.0 A 900V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design 3 HFD2N90 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFU2N90 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25 unless otherwise specified Parameter Value Units 900 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25ఁ͚͑ 2.0 A Drain Current – Continuous (TC = 100ఁ͚͑ 1.3 A IDM Drain Current – Pulsed 8.0 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 170 mJ IAR Avalanche Current (Note 1) 2.0 A EAR Repetitive Avalanche Energy (Note 1) 7.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25ఁ) * 2.5 W Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ 70 W 0.56 W/ఁ͑ -55 to +150 ఁ͑ 300 ఁ͑ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Typ. Max. RșJC Junction-to-Case -- 1.78 RșJA Junction-to-Ambient* -- 50 RșJA Junction-to-Ambient -- 110 Units ఁ͠Έ͑ * When mounted on the minimum pad size recommended (PCB Mount) క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Feb 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ͑ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.0 A͑ -- 4.5 5.6 ͑ש VGS = 0 V, ID = 250 Ꮃ͑ 900 -- -- V ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ -- 1.0 -- ·͠ఁ͑ VDS = 900 V, VGS = 0 V͑ -- -- 1 Ꮃ͑ VDS = 720 V, TC = 125ఁ͑ -- -- 10 Ꮃ͑ Off Characteristics BVDSS Drain-Source Breakdown Voltage ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ͑ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ͑ -- 700 910 Ꮔ͑ -- 70 90 Ꮔ͑ -- 7 9 Ꮔ͑ -- 20 40 Ꭸ͑ -- 55 110 Ꭸ͑ -- 30 60 Ꭸ͑ -- 40 80 Ꭸ͑ -- 17 22 Οʹ͑ -- 4.5 -- Οʹ͑ -- 7.5 -- Οʹ͑ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz͑ Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 450 V, ID = 2.2 A, RG = 25 ͑ש ͑ ͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝ VDS = 720V, ID = 2.2 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͑͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 2.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 8.0 VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 400 -- Ꭸ͑ Qrr Reverse Recovery Charge IS = 2.2 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 1.6 -- ȝ& A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=65mH, IAS=2.2A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH 5. Essentially Independent of Operating Temperature క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Electrical Characteristics TC=25 qC HFD2N90_HFU2N90 Typical Characteristics 101 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Top : * Notes : 1. 300us Pulse Test 2. TC = 25oC 10-1 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 10 8 VGS = 10V 6 4 VGS = 20V 2 1 10 0 10 150 䉝 25䉝 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0V ȝ V3XOVH7HVW Note : TJ = 25oC 0 -1 0 1 2 3 4 5 10 6 0.2 0.4 0.6 1.0 1.2 1.4 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 900 Coss 600 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0 V 2. f = 1 MHz Crss 300 VDS = 180V VGS, Gate-Source Voltage [V] 1200 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] 10 VDS = 450V VDS = 720V 8 6 4 2 * Note : ID = 2.2A 0 -1 10 0 0 10 1 10 0 4 8 12 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 20 క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFD2N90_HFU2N90 Typical Characteristics 1.1 1.0 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0 V 2. ID ȝ $ 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 1.0 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [ C] 100 150 200 Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 50 TJ, Junction Temperature [oC] o 10 1.5 ID, Drain Current [A] ID, Drain Current [A] 100 Ps 1 ms 10 ms 100 ms DC * Notes : 1. TC = 25 oC 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 10-1 100 0.0 25 50 75 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area 0 Zș -&(t), Thermal Response 10 100 125 150 TC, Case Temperature [oC] Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. Zș -&(t) = 1.78 䉝㻛㼃 㻌㻹㼍㼤㻚 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zș -&(t) 0.1 0.05 -1 10 0.02 0.01 PDM single pulse t1 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFD2N90_HFU2N90 Typical Characteristics 1.1 1.0 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 0 V 2. ID ȝ $ 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. VGS = 10 V 2. ID = 1.5 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 Operation in This Area is Limited by R DS(on) 2.5 1 ID, Drain Current [A] 100 Ps 1 ms 10 ms 0 10 DC -1 10 䈜㻌㻺㼛㼠㼑㼟㻌㻦 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 2.0 1.5 1.0 0.5 -2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 0 10 75 100 125 150 TC, Case Temperature [ 䉝㼉 VDS, Drain-Source Voltage [V] Zș -&(t), Thermal Response ID, Drain Current [A] 10 Figure 10. Maximum Drain Current vs Case Temperature D=0.5 0.2 䈜㻌㻺㼛㼠㼑㼟㻌㻦 1. Zș -&(t) = 1.78 䉝㻛㼃 㻌㻹㼍㼤㻚 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zș -&(t) 0.1 0.05 -1 10 0.02 0.01 PDM single pulse t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Fig 12. Gate Charge Test Circuit & Waveform .ȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Package Dimension {vTY\YhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡ HFD2N90_HFU2N90 Package Dimension {vTY\XhG క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡