Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V(BR) CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min 1.5max 1.6 b +0.2 (1.5) Symbol (1.4) Electrical Characteristics Unit V V V A A W ºC ºC 10.0 –0.5 Ratings 380±50 380±50 6 6 (pulse 10) 1 60 (Tc=25ºC) 150 –55 to +150 0.1–0.1 1.27±0.2 3.0 –0.5 +0.3 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 8.6±0.3 Absolute Maximum Ratings (Ta=25ºC) +0.2 0.4±0.1 0.86 –0.1 1.2±0.2 2.54±0.5 2.54±0.5 a) Part No. b) Lot No. (Unit: mm) 150mA 120mA A A 18m 4mA 4 0 6 0.2 0.5 1 5 VCE (V) 10 (VCE = 2V) 10000 5000 Typ hFE hFE 5ºC 12 1000 500 100 50 0.5 IC (A) 94 1000 500 25 ºC 5ºC –5 100 50 0.1 1 5 10 20 0.02 0.1 0.5 1.0 IC (A) ra tu re ) e) ) ur at 25º (C a s 1.0 2.0 2.4 VBE (V) ■ hFE — IC Temperature Characteristics (typ.) (VCE = 2V) 10000 5000 10 0.02 0 0 50 100 200 IB (mA) ■ hFE — IC Characteristics (typ.) ure er se (C C C ( Ca 5º 12 2 0 ■ 5 10 j-c • j-a —t Characteristics 100 j-c • j-a (ºC/W) 0 rat mp pe 1A e te m pe 5 te 1 5A – 3 0 ºC IC = 7A 3A as IB=1mA e 5 2 tem A 90m 0mA 6 IC (A) 20m 2mA IC (A) (VBE =4V) 10 3 VCE (sat) (V) 10 ■ IC — VBE Temperature Characteristics (typ.) ■ VCE (sat) — I B Characteristics (typ.) ■ IC — VCE Characteristics (typ.) j-a 10 j-c 1 0.1 0.001 0.01 0.1 t (s) 1 10