Sanken MN638S Power transistor Datasheet

Power Transistor MN638S
Test Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA
External Dimensions TO220S
4.44±0.2
10.2±0.3
1.3±0.2
V
a
+0.3
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
(Ta=25ºC)
Unit
µA
mA
V
Ratings
10max
20max
330 to 430
1500min
1.5max
1.6
b
+0.2
(1.5)
Symbol
(1.4)
Electrical Characteristics
Unit
V
V
V
A
A
W
ºC
ºC
10.0 –0.5
Ratings
380±50
380±50
6
6 (pulse 10)
1
60 (Tc=25ºC)
150
–55 to +150
0.1–0.1
1.27±0.2
3.0 –0.5
+0.3
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
8.6±0.3
Absolute Maximum Ratings (Ta=25ºC)
+0.2
0.4±0.1
0.86 –0.1
1.2±0.2
2.54±0.5
2.54±0.5
a) Part No.
b) Lot No.
(Unit: mm)
150mA
120mA
A
A
18m
4mA
4
0
6
0.2 0.5
1
5
VCE (V)
10
(VCE = 2V)
10000
5000
Typ
hFE
hFE
5ºC
12
1000
500
100
50
0.5
IC (A)
94
1000
500
25
ºC
5ºC
–5
100
50
0.1
1
5
10
20
0.02
0.1
0.5 1.0
IC (A)
ra tu
re )
e)
)
ur
at
25º
(C a s
1.0
2.0
2.4
VBE (V)
■ hFE — IC Temperature Characteristics (typ.)
(VCE = 2V)
10000
5000
10
0.02
0
0
50 100 200
IB (mA)
■ hFE — IC Characteristics (typ.)
ure
er
se
(C
C
C (
Ca
5º
12
2
0
■
5
10
j-c •
j-a —t
Characteristics
100
j-c • j-a (ºC/W)
0
rat
mp
pe
1A
e te m
pe
5
te
1
5A
– 3 0 ºC
IC = 7A
3A
as
IB=1mA
e
5
2
tem
A
90m 0mA
6
IC (A)
20m
2mA
IC (A)
(VBE =4V)
10
3
VCE (sat) (V)
10
■ IC — VBE Temperature Characteristics (typ.)
■ VCE (sat) — I B Characteristics (typ.)
■ IC — VCE Characteristics (typ.)
j-a
10
j-c
1
0.1
0.001
0.01
0.1
t (s)
1
10
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