IRF IRHM9130 Simple drive requirement Datasheet

PD - 90888C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM9130
100V, P-CHANNEL
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9130
100K Rads (Si)
IRHM93130
300K Rads (Si)
RDS(on)
0.3Ω
0.3Ω
ID
-11A
-11A
International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-11
-7.0
-44
75
0.6
±20
190
-11
7.5
-10
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
For footnotes refer to the last page
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1
02/18/03
IRHM9130
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
Test Conditions
—
—
V
VGS = 0V, ID =-1.0mA
-0.1
—
V/°C
Reference to 25°C, ID = -1.0mA
—
—
—
—
—
—
0.3
0.325
-4.0
—
-25
-250
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
10
25
30
50
70
70
—
VGS = -12V, I D = -7.0A➃
VGS = -12V, ID = -11A➃
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -7.0A ➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -11A
VDS = -50V
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
2.5
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
VDD = -50V, ID = -11A,
VGS =-12V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
300
74
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
-11
-44
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
250
0.84
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = -11A, VGS = 0V ➃
Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max
—
—
—
— 1.67
0.21 —
—
30
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage ➃
Units
Test Conditions
V
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS , ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS =-80V, VGS =0V
VGS = -12V, ID =-7.0A
0.3
Ω
VGS = -12V, ID =-7.0A
- 3.0
V
VGS = 0V, IS = -11A
300K Rads (Si)2
Min
Max
Min
Max
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.3
-100
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.3
nA
—
0.3
—
—
-3.0
—
1. Part number IRHM9130
2. Part number IRHM93130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LE T
MeV/(mg/cm²))
Energy
(MeV)
VD S(V)
Range
(µm)
@VGS=0V
@VGS=5V
@VGS=10V
@VGS=15V
@VGS=20V
Cu
28
285
43
-100
-100
-100
-70
-60
Br
36.8
305
39
-100
-100
-70
-50
-40
I
59.9
345
32.8
-60
—
—
—
—
-120
-100
VDS
-80
Cu
-60
Br
-40
I
-20
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM9130
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
-5.0V
20µs PULSE WIDTH
T = 25 C
1
10
-5.0V
10
100
2.5
10
V DS = -50V
20µs PULSE WIDTH
7
8
9
10
11
12
Fig 3. Typical Transfer Characteristics
4
13
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 150 ° C
--I D ,
Drain-to-Source Current (A)
TJ = 25 ° C
- GS, Gate-to-Source Voltage (V)
-V
10
100
Fig 2. Typical Output Characteristics
100
6
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
°
J
1
0.1
-VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
T = 150 C
°
J
1
0.1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -11A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs.Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
Ciss
1200
800
Coss
400
Crss
20
-VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHM9130
10
VDS = -80V
VDS =-50V
VDS =-20V
16
12
8
4
0
1
ID = -11A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
DS(on)
10
100
TJ = 25 ° C
1
100us
10
V GS = 0 V
0.1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5.0
1
1ms
TC = 25 ° C
TJ = 150 °C
Single Pulse
1
10ms
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM9130
Pre-Irradiation
12
RD
VDS
VGS
10
D.U.T.
-ID , Drain Current (A)
RG
-
+
8
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
2
td(on)
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM9130
L
VDS
D .U .T
RG
-2
V
V0GS
tp
VD D
A
IA S
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
400
ID
-4.9A
-7.0A
BOTTOM -11A
TOP
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-12V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM9130
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C, L=3.1mH
Peak I L = -11A, VGS =-12V
➂ ISD ≤ -11A, di/dt ≤ -480A/µs,
VDD ≤ -100V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
22.73 [.895]
21.21 [.835]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
3
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
0.36 [.014]
4.82 [.190]
3.81 [.150]
3.81 [.150]
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
2
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B
A
B A
NOT ES :
1.
2.
3.
4.
B
1.27 [.050]
1.02 [.040]
A
1
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
DIMENSIONING & TOLERANCING PE R ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES].
CONT ROLLING DIMENSION: INCH.
CONF ORMS T O JEDEC OUT LINE T O-254AA.
PIN ASSIGNMENT S
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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