Ordering number : ENA1477 ON Semiconductor DATA SHEET N-Channel Silicon MOSFET EFC4612R General-Purpose Switching Device Applications Features • • • • 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Symbol Conditions Ratings VSSS VGSS IS ISP Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min Source-to-Source Breakdown Voltage V(BR)SSS ISSS IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 1 Zero-Gate Voltage Source Current Gate-to-Source Leakage Current IGSS VGS=±8V, VSS=0V Test Circuit 2 Cutoff Voltage VGS(off) Test Circuit 3 Forward Transfer Admittance | yfs | VSS=10V, IS=1mA VSS=10V, IS=3A Marking : FN © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 typ 24 V Test Circuit 1 Test Circuit 4 Unit max 0.5 1 μA ±10 μA 1.3 3.1 V S Continued on next page. www.onsemi.com Publication Order Number: EFC4612R/D EFC4612R Continued from preceding page. Parameter Symbol RSS(on)1 Ratings Conditions min typ max Unit IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 24 39 45 mΩ RSS(on)2 Test Circuit 5 25 41 48 mΩ RSS(on)3 IS=3A, VGS=3.7V Test Circuit 5 27.5 43 50 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 31.5 48 57 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 33.5 58 72 mΩ Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 20 ns Rise Time tr See specified Test Circuit. Test Circuit 7 230 ns Turn-OFF Delay Time td(off) See specified Test Circuit. Test Circuit 7 130 ns Fall Time tf See specified Test Circuit. Test Circuit 7 210 ns Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A 7 nC Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Static Source-to-Source On-State Resistance Package Dimensions 0.8 Test Circuit 6 1.2 V Electrical Connection unit : mm (typ) 7064-001 1 1.26 4 3 Rg 1.26 2 Rg 2 3 0.15 0.22 1 Rg=200Ω 0.65 2 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.65 1 4 3 0.3 SANYO : EFCP1313-4CC-037 Rev. 0 | Page 2 of 5 | www.onsemi.com 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 EFC4612R Test circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS(+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS(off) IT11566 Test Circuit 4 | yfs | S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 Test Circuit 5 RSS(on) IT11568 Test Circuit 6 VF(S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 7 td(on), tr, td(off), tf VDD=10V IS=3A RL=3.33Ω V S2 OUT VIN G2 PW=10μs D.C.≤1% G1 S1 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Rev. 0 | Page 3 of 5 | www.onsemi.com EFC4612R IS -- VSS VSS=10V 5 3.5 V SS=1.5V 3.0 2.5 2.0 1.5 4 3 2 1 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-to-Source Voltage, VSS -- V Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 100 80 60 40 20 0 2 4 6 8 IS -- VF(S-S) 0.01 0 0.2 0.4 0.6 0.8 1.0 Forward Source-to-Source Voltage, VF(S-S) -- V VGS -- Qg 2.5 2.0 1.5 1.0 0.5 1 2 3 4 3A .0V, I S= V GS=4 --40 --20 0 20 40 5 6 Total Gate Charge, Qg -- nC 7 60 80 100 120 140 5 160 IT14683 SW Time -- IS VSS=10V VGS=4.5V 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 0.1 2 3 2 5 7 1.0 3 100 7 5 3 2 10 7 5 3 2 ISP=60A PW≤10μs 10 0μ s 1m s IS=6A 1.0 7 5 3 2 0.1 7 5 3 2 5 7 10 IT14685 ASO 2 3.0 0 20 Source Current, IS -- A 3.5 0 40 IT14684 VSS=10V IS=6A 4.0 60 10 0.01 1.2 Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 4.5 =3A V, I S =2.5 =3A S VG V, I S =3.1 VGS A , I S=3 =4.5V VGS Ambient Temperature, Ta -- °C Switching Time, SW Time -- ns Ta=7 5°C 25°C --25°C Source Current, IS -- A 3 2 3 2 =3.7 VGS 80 7 1.0 7 5 2.0 IT14681 =3A V, I S 100 1000 3 2 1.5 120 IT14682 VGS=0V 0.1 7 5 1.0 RSS(on) -- Ta 0 --60 10 Gate-to-Source Voltage, VGS -- V 10 7 5 0.5 Gate-to-Source Voltage, VGS -- V 140 Ta=25°C IS=3A 120 0 0 IT14720 RSS(on) -- VGS 140 0 2.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 0 25°C --25°C 4.0 Ta=7 5°C 4.5 Source Current, IS -- A Source Current, IS -- A 5.0 4.0V 3.1V 5.5 IS -- VGS 6 2.5V 10.0V 4.5V 6.0 10 ms 1 DC 00m op s era tio n Operation in this area is limited by RSS(on). Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 IT14686 Rev. 0 | Page 4 of 5 | www.onsemi.com 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source-to-Source Voltage, VSS -- V 2 3 5 IT14721 EFC4612R PT -- Ta 1.8 When mounted on ceramic substrate (5000mm2×0.8mm) Total Dissipation, PT -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14722 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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