MAKO BZX84C4V7 Sot-23 plastic-encapsulate diode Datasheet

MAKO Semiconductor CO., LTD
SOT-23 Plastic-Encapsulate DLRGHV
BZX84C2V4-BZX84C43
ZENER DIODE
SOT-23
FEATURES
z
Planar Die Construction
z
300mW Power Dissipation
Zener Voltages from 2.4V - 43V
z
z
Ultra-Small Surface Mount Package Power Dissipation
M
O
AK
Maximum Ratings(Ta=25℃ unless otherwise specified)
Characteristic
Thermal Resistance from Junction to Ambient
Storage Temperature Range
Unit
VF
Pd
0.9
300
V
mW
417
Tj
150
℃ /W
℃
Tstg
-55~+150
℃
RθJA
ico
m
Junction Temperature
Value
@ IF = 10mA
Se
Forward Voltage (Note 2)
Power Dissipation(Note 1)
Symbol
r
to
uc
nd
MAKOSemiconductor
1
Du
ELECTRICAL CHARACTERISTICS
Ta=25℃ unless otherwise specified
Maximum Zener
ZenerVoltage Range (Note 2)
Type
Number
Impedance
VZ@IZT
IZT
ZZT@IZT
ZZK@IZK
Reverse
Coefficent of
Zener
voltage
@ IZT=5mA
IZK
IR
mV/°C
VR
Min(V)
Max(V)
(mA)
(mA)
(μA)
(V)
Min
Max
Z11
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0
BZX84C2V7
Z12
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
BZX84C3V0
Z13
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
BZX84C3V3
Z14
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
BZX84C3V6
Z15
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
BZX84C3V9
Z16
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
BZX84C4V3
Z17
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
BZX84C4V7
Z1
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
Z2
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
M
Nom(V)
BZX84C2V4
O
AK
BZX84C5V1
BZX84C6V2
Z4
BZX84C6V8
Z5
BZX84C7V5
Z6
BZX84C8V2
Z7
BZX84C9V1
Z8
9.1
8.5
BZX84C10
Z9
10
9.4
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
m
Z3
Se
BZX84C5V6
(Ω)
Temperature
Current
(Note 3)
Code
Maximum
Y1
11
10.4
11.6
Y2
12
11.4
12.7
5
20
150
1.0
0.1
8.0
5.4
9.0
5
25
150
1.0
0.1
8.0
6.0
10.0
BZX84C13
Y3
13
12.4
14.1
BZX84C15
Y4
15
13.8
BZX84C16
Y5
16
15.3
BZX84C18
Y6
18
BZX84C20
Y7
20
BZX84C22
Y8
BZX84C24
Y9
BZX84C27
Y10
27
25.1
BZX84C30
Y11
30
28.0
BZX84C33
Y12
33
31.0
35.0
2
BZX84C36
Y13
36
34.0
38.0
2
90
350
BZX84C39
Y14
39
37.0
41.0
2
130
350
BZX84C43
Y15
43
40.0
46.0
2
100
700
30
170
1.0
0.1
8.0
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
16.8
19.1
5
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
22
20.8
23.3
5
55
250
1.0
24
22.8
25.6
5
70
28.9
2
80
32.0
2
ico
5
uc
BZX84C11
BZX84C12
225
nd
45
80
0.1
12.6
12.4
11.0
16.0
0.1
15.4
16.4
20.0
250
1.0
0.1
16.8
18.4
22.0
300
0.5
0.1
18.9
21.4
25.3
300
325
0.5
0.1
21.0
r
to
80
1.0
7.0
0.5
0.1
23.1
24.4
27.4
29.4
33.4
0.5
0.1
25.2
30.4
37.4
0.5
0.1
27.3
33.4
41.2
1
0.1
32
10
12
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms,pulse width =300μs.
3. f = 1kHZ.
MAKOSemiconductor
2
Du0
ELECTRICAL CHARACTERISTICS
Zener Characteristics(VZ Up to 10 V)
Zener Characteristics(11 V to 43 V)
100
100
Pulsed
PD =300mW
IZ, ZENER CURRENT (mA)
1
1
2
3
4
5
6
7
8
9
10
0.5
10
11
15
20
VZ, ZENER VOLTAGE (V)
25
43
39
36
33
30
30
35
40
M
Pulsed
FOR BZX84CXXX SERIES
10
O
AK
IR, LEAKAGE CURRENT (uA)
30
25
20
VZ @ IZT
15
10
Se
5
0
4
8
12
16
20
24
28
32
VZ, NOMINAL ZENER VOLTAGE (V)
36
40
0.1
0.01
Ta=100℃
Ta=25℃
1E-4
0
44
5
10
15
20
25
30
35
40
45
VZ, NOMINAL ZENER VOLTAGE (V)
ico
Typical Capacitance
1000
1
1E-3
m
-5
0
50
Typical Leakage Current
100
TYPICAL Ta VALUES
35
45
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
40
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
27
1
0.5
Effect of Zener Voltage on Zener Impedance
1000
Ta=25℃
f=1MHz
ZZT, DYNAMIC IMPEDANCE(Ω)
1
100
IZ=5mA
10
r
to
BIAS AT
50% OF VZ NOM
1
10
100
1
VZ, NOMINAL ZENER VOLTAGE (V)
f=1kHz
uc
1V BIAS
1
IZ(AC)=0.1IZ(DC)
nd
100
10
Ta=25℃
IZ=1mA
0V BIAS
C, CAPACITANCE (pF)
24
18
20
22
10
11
12
13
10
9.1
8.2
7.5
6.2
6.8
5.1
4.7
5.6
10
2.4
IZ, ZENER CURRENT (mA)
Ta =25℃
PD =300mW
Pulsed
15
16
Ta =25℃
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
350
250
POWER DISSIPATION
PD
(mW)
300
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
MAKO Semiconductor
100
Ta
125
150
(℃ )
3
D,Aug,2014
Symbol
M
O
AK
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
m
Se
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
r
to
uc
nd
ico
MAKOSemiconductor
4
Du
M
O
AK
m
Se
r
to
uc
nd
ico
MAKOSemiconductor
5
Du
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