GeneSiC GB05SHT12-CAU High temperature silicon carbide power schottky diode Datasheet

Die Datasheet
High Temperature Silicon Carbide
Power Schottky Diode
GB05SHT12-CAU
VRRM
IF @ 25 oC
QC
=
=
=
1200 V
8A
17 nC
Features
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1200 V Schottky rectifier
210 °C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Size = 1.6 mm x 1.6 mm
Advantages
Applications
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High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
I t value
Power dissipation
Operating and storage temperature
Symbol
VRRM
IF
IF
IF(RMS)
Conditions
Values
1200
8
2.5
4.3
Unit
V
A
A
A
TC = 25 °C, RthJC = 3.4
TC ≤ 190 °C, RthJC = 3.4
TC ≤ 190 °C, RthJC = 3.4
IF,SM
TC = 25 °C, tP = 10 ms
IF,max
2
∫i dt
Ptot
Tj , Tstg
30
A
TC = 25 °C, tP = 10 µs
120
5
66
-55 to 210
A
2
AS
W
°C
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 3.4
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
Total capacitance
Feb 2015
ts
C
Conditions
IF = 2.5 A, Tj = 25 °C
IF = 2.5 A, Tj = 210 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 210 °C
VR = 400 V
IF ≤ IF,MAX
VR = 960 V
dIF/dt = 200 A/μs
VR = 400 V
Tj = 210 °C
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.6
2.8
1
25
17
29
max.
Unit
V
10
200
µA
nC
< 25
ns
237
25
20
pF
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 1 of 4
Die Datasheet
GB05SHT12-CAU
Figures:
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Capacitive Energy vs Reverse Voltage
Characteristics
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 2 of 4
Die Datasheet
GB05SHT12-CAU
Mechanical Parameters
Die Dimensions
1.6 x 1.6
Anode pad size
1.34 x 1.34
Die Area total / active
mm
2
2.56/1.69
Die Thickness
360
µm
Wafer Size
100
mm
Flat Position
0
deg
Die Frontside Passivation
Polyimide
Anode Pad Metallization
400 nm Ni + 200 nm Au
Backside Cathode Metallization
400 nm Ni + 200 nm Au
Die Attach
Electrically conductive glue or solder
Wire Bond
Au ≤ 76 µm
Reject ink dot size
Φ ≥ 0.3 mm
Recommended storage environment
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
Chip Dimensions:
DIE
METAL
WIRE
BONDABLE
Feb 2015
A
[mm]
B
[mm]
C
[mm]
D
[mm]
E
[mm]
F
[mm]
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
1.6
1.6
1.34
1.34
1.3
1.3
Pg 3 of 4
Die Datasheet
GB05SHT12-CAU
Revision History
Date
Revision
Comments
2015/02/09
1
Inserted Mechanical Parameters
2012/04/03
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg 4 of 4
Die Datasheet
GB05SHT12-CAU
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB05SHT12-CAU_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB05SHT12-CAU.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
05-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB05SHT12-CAU SPICE Model
*
.SUBCKT GB05SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0021); Temperature Dependant Resistor
D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model
.MODEL GB05SHT12_25C D
+ IS
4.45E-15
RS
0.206
+ N
1.18144
IKF
112.92
+ EG
1.2
XTI
3
+ CJO
3.00E-10
VJ
0.419
+ M
1.6
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
5
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB05SHT12_PIN D
+ IS
2.93E-12
RS
0.35326
+ N
4.6113
IKF
0.0043236
+ EG
3.23
XTI
60
+ FC
0.5
TT
0
+ BV
1200
IBV
1.00E-03
+ VPK
1200
IAVE
2.5
+ TYPE
SiC_PiN
.ENDS
*
* End of GB05SHT12-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Pg1 of 1
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