Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB05SHT12-CAU VRRM IF @ 25 oC QC = = = 1200 V 8A 17 nC Features 1200 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500 Die Size = 1.6 mm x 1.6 mm Advantages Applications High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 I t value Power dissipation Operating and storage temperature Symbol VRRM IF IF IF(RMS) Conditions Values 1200 8 2.5 4.3 Unit V A A A TC = 25 °C, RthJC = 3.4 TC ≤ 190 °C, RthJC = 3.4 TC ≤ 190 °C, RthJC = 3.4 IF,SM TC = 25 °C, tP = 10 ms IF,max 2 ∫i dt Ptot Tj , Tstg 30 A TC = 25 °C, tP = 10 µs 120 5 66 -55 to 210 A 2 AS W °C TC = 25 °C, tP = 10 ms TC = 25 °C, RthJC = 3.4 Electrical Characteristics at Tj = 210 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time Total capacitance Feb 2015 ts C Conditions IF = 2.5 A, Tj = 25 °C IF = 2.5 A, Tj = 210 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 210 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 210 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 1.6 2.8 1 25 17 29 max. Unit V 10 200 µA nC < 25 ns 237 25 20 pF http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg 1 of 4 Die Datasheet GB05SHT12-CAU Figures: Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Capacitive Energy vs Reverse Voltage Characteristics Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg 2 of 4 Die Datasheet GB05SHT12-CAU Mechanical Parameters Die Dimensions 1.6 x 1.6 Anode pad size 1.34 x 1.34 Die Area total / active mm 2 2.56/1.69 Die Thickness 360 µm Wafer Size 100 mm Flat Position 0 deg Die Frontside Passivation Polyimide Anode Pad Metallization 400 nm Ni + 200 nm Au Backside Cathode Metallization 400 nm Ni + 200 nm Au Die Attach Electrically conductive glue or solder Wire Bond Au ≤ 76 µm Reject ink dot size Φ ≥ 0.3 mm Recommended storage environment Store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 °C Chip Dimensions: DIE METAL WIRE BONDABLE Feb 2015 A [mm] B [mm] C [mm] D [mm] E [mm] F [mm] http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ 1.6 1.6 1.34 1.34 1.3 1.3 Pg 3 of 4 Die Datasheet GB05SHT12-CAU Revision History Date Revision Comments 2015/02/09 1 Inserted Mechanical Parameters 2012/04/03 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg 4 of 4 Die Datasheet GB05SHT12-CAU SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB05SHT12-CAU_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GB05SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB05SHT12-CAU SPICE Model * .SUBCKT GB05SHT12 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.0021); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI 3 + CJO 3.00E-10 VJ 0.419 + M 1.6 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 5 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL GB05SHT12_PIN D + IS 2.93E-12 RS 0.35326 + N 4.6113 IKF 0.0043236 + EG 3.23 XTI 60 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 2.5 + TYPE SiC_PiN .ENDS * * End of GB05SHT12-CAU SPICE Model Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1