Mitsubishi MGF0805A L & s band gaas fet [ smd non-matched ] Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
DESCRIPTION
Gate Mark
Round Corner
The MGF0805A, GaAs FET with an N-channel schottky
Gate, is designed for MMDS/UMTS/WiMAX applications.
FEATURES
4.2 mm
• High output power : Po = 36.5 dBm (typ.)
• High power added efficiency : ηadd = 50 % (typ.)
• Hermetic package
• Designed for use in Class AB linear amplifiers
APPLICATIONS
• L/S band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds = 10 V • Ids = 400 mA • Rg = 100 Ω
Packaging Tape & Reel (1000 pcs)
Absolute maximum ratings (Ta = 25° C)
Symbol
Parameter
Ratings
Unit
4.0 mm
VDS
Drain to Source Voltage
15
V
VGS
Gate to Source Voltage
-5
V
ID
Drain current
2.5
A
Package Outline
PT
Total power dissipation
21
W
(GF-50 Style)
IGR
Reverse gate current
- 10
mA
IGF
Forward gate current
21
mA
Tch
Channel temperature
175
°C
Tstg
Storage temperature
- 55 to +150
°C
Electrical characteristics ( Ta = 25° C)
Symbol
Parameter
Limits
Test conditions
Unit
Min.
Typ.
Max.
–
1800
–
mA
- 0.5
- 1.1
- 2.0
V
IDSS
Saturated drain current
VDS = 3 V, VGS = 0 V
VGS(off)
Gate to source cut-off
voltage
VDS = 3 V, IDS = 10 mA
gm
Transconductance
VDS = 10 V, IDS = 400 mA
–
1000
–
mS
Po
Output power
35.0
36.5
–
dBm
ηadd
Power added efficiency
VDS = 10 V, IDQ = 400 mA,
f = 1.9 GHz, Pin = 22 dBm
–
50
–
%
GLP
Linear power gain
VDS=10V, IDQ=400mA, f=1.9GHz
13.0
14.5
–
dB
Rth(ch-c)
Thermal resistance *1
∆Vf Method
–
5
7
°C/W
*1 : Channel to case
Specifications are subject to change without notice.
1
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Outline Drawing
Gate Mark
Round Corner
(1)
4.20
Reference Plane
1.15
Reference Plane
(2)
4.00
0.80
(1) Gate
(2) Drain
(3) Source unit: mm
0.30
2.00
0.80
Gate Mark
4.00
(3)
2.80
1.20
(1)
(2)
0.80
3.80
BACK SIDE PATTERN
2
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
S-parameters:
Condition: VD = 10 V, ID = 400 mA, Ta = 25 deg. C
Freq.
S11
S21
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
0.935
0.942
0.943
0.943
0.943
0.942
0.939
0.939
0.937
0.937
0.935
0.936
0.935
0.932
0.934
0.935
0.933
0.932
0.931
0.931
0.929
0.926
0.924
0.920
-149.9
-162.4
-169.6
-174.7
-178.5
178.5
175.8
173.1
170.5
168.2
166.2
164.2
162.3
160.6
158.6
156.4
154.4
152.1
149.8
147.3
144.6
141.8
138.9
137.5
7.946
5.440
4.092
3.279
2.743
2.348
2.050
1.812
1.639
1.500
1.379
1.277
1.192
1.119
1.059
1.005
0.955
0.910
0.870
0.836
0.808
0.781
0.757
0.742
99.7
89.3
82.2
76.7
71.7
67.3
63.0
58.7
53.8
49.9
46.0
42.3
38.5
35.0
31.4
27.4
23.6
19.6
15.7
11.8
7.9
3.7
-0.4
-2.9
0.0129
0.0132
0.0134
0.0136
0.0138
0.0140
0.0141
0.0142
0.0146
0.0151
0.0155
0.0159
0.0160
0.0163
0.0167
0.0182
0.0190
0.0199
0.0208
0.0215
0.0232
0.0249
0.0263
0.0281
19.0
14.1
12.5
12.0
12.0
12.7
13.2
14.3
14.5
14.9
15.4
15.4
15.9
17.6
20.5
21.4
20.9
20.5
20.2
20.1
21.2
19.2
17.3
17.4
(mag)
(ang)
0.740 -176.7
0.740 -179.0
0.733 179.5
0.729 178.4
0.728 177.4
0.732 176.8
0.730 174.7
0.741 173.8
0.737 173.5
0.739 172.7
0.740 172.0
0.745 171.2
0.746 170.3
0.750 169.3
0.753 168.3
0.755 167.0
0.757 165.6
0.758 164.2
0.760 162.7
0.761 161.0
0.762 159.4
0.764 157.8
0.763 156.0
0.767 156.5
Note : Reference plane is shown in Outline Drawing
3
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Example of Circuit Schematic and Characteristics : f = 2.6 GHz
Gain
(dB)
19
Pout
(dBm)
40
18
35
17
30
16
25
15
20
14
15
13
10
12
5
11
0
PAE
(%)
80
70
Pout
60
50
40
Gain
30
20
PAE
5
10
10
15
Pin (dBm)
20
0
25
ACP
(dBc)
0
ID
(mA)
700
-10
600
-20
500
ID
-30
400
-40
-50
300
ACP
200
NACP
-60
-70
15
20
100
25
30
Pout (dBm)
0
35
Bias condition: VD = 10 V, IDQ = 400 mA,
Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
4
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
3.5
700
3.0
600
2.5
500
ID
2.0
400
1.5
300
EVM
1.0
200
0.5
100
0.0
15
0
20
Bias condition:
VD = 10 V,
IDQ = 400 mA
Modulation signal:
IEEE.802.16 WiMAX A,
Downlink, 64QAM3/4
ID (mA ]
EVM (%)
Example of Circuit Schematic and Characteristics : f = 2.6 GHz
25
30
Pout (dBm )
35
-VG
+VD
100 Ω
51 Ω
1000pF
4.7uF
20pF
20pF
Z15
Z26
20pF
Input
Z14
Output
20pF
Z13
Z12
Z21
Z11
Z23
Z22
Z24
Z25
MGF0805A
1.5pF
2pF
2pF
1.5pF
1pF
Z11 to Z26 : Microstrip line ( L × W, Unit: mm )
Z11 : 1.0 × 0.9
Z14 : 3.0 × 0.9
Z22 : 2.1 × 0.9
Z12 : 0.8 × 0.9
Z15 : 17.6 × 0.5
Z23 : 3.2 × 0.9
Z13 : 14.5 × 0.9
Z21 : 1.0 × 0.9
Z24 : 10.0 × 0.9
PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm
5
Z25 : 3.0 × 0.9
Z26 : 17.6 × 0.5
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Example of Circuit Schematic and Characteristics : f = 1.9 GHz
Gain
(dB)
Pout
(dBm)
PAE
(%)
ACP
(dBc)
ID
(mA)
19
40
80
0
700
18
35
70
-10
600
17
Pout
30
60
50
16
25
15
20
14
15
30
13
10
20
12
5
11
0
Gain
10
500
ID
-30
400
40
PAE
5
-20
15
20
-40
300
ACP
-50
10
-60
0
-70
100
0
15
25
200
NACP
20
25
30
35
Pout (dBm)
Pin (dBm)
Bias condition: VD = 10 V, IDQ = 400 mA,
Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
-VG
+VD
47uF
51 Ω
1000pF
1000pF
20pF
20pF
Z15
Input
100 Ω
20pF
Z14
Z13
Z12
Z11
Z27
Output
21nH
20pF
Z21
Z23
Z22
Z25
Z24
Z26
MGF0805A
2pF
3pF
3pF
2pF
1pF
Z11 to Z27 : Microstrip line ( L × W, Unit: mm )
Z11 : 1.0 × 0.9
Z14 : 3.0 × 0.9
Z22 : 1.2 × 0.9
Z12 : 5.1 × 0.9
Z15 : 22.0 × 0.5
Z23 : 5.7 × 0.9
Z13 : 9.6 × 0.9
Z21 : 1.0 × 0.9
Z24 : 5.9 × 0.9
PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm
6
Z25 : 2.8 × 0.9
Z26 : 3.0 × 0.9
Z27 : 22 × 0.5
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Example of Circuit Schematic and Characteristics : f = 3.5 GHz
Gain
(dB)
Pout
(dBm)
PAE
(%)
ACP
(dBc)
16
40
80
0
700
15
35
70
-10
600
-20
500
Pout
14
30
60
13
25
50
12
20
40
11
15
10
10
9
5
8
0
Gain
10
20
25
400
300
-40
ACP
-50
20
15
ID
-30
30
PAE
ID
(mA)
10
-60
0
-70
30
200
100
NACP
0
15
20
25
Pin (dBm)
30
35
Pout (dBm)
Bias condition: VD = 10 V, IDQ = 400 mA,
Modulation signal: 3GPP TEST MODEL 1 ( W-CDMA )
-VG
+VD
100 Ω
51 Ω
1000pF
47uF
20pF
20pF
Z16
Input
Z26
20pF
Z15
Output
20pF
Z14
Z13
Z12
Z21
Z11
Z23
Z22
Z24
Z25
MGF0805A
0.5pF
1pF
1pF
0.5pF
1.5pF
0.5pF
Z11 to Z26 : Microstrip line ( L × W, Unit: mm )
Z11 : 1.0 × 0.9
Z14 : 3.7 × 0.9
Z21 : 1.0 × 0.9
Z12 : 0.8 × 0.9
Z15 : 3.0 × 0.9
Z22 : 0.8 × 0.9
Z13 : 10.8 × 0.9
Z16 : 13.3 × 0.5
Z23 : 9.8 × 0.9
PCB : BT Resin, εr = 3.4, Substrate thickness = 0.4 mm
7
Z24 : 4.7 × 0.9
Z25 : 3.0 × 0.9
Z26 : 13.3 × 0.5
Mitsubishi Electric
Sept. / 2009
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF0805A
L & S Band GaAs FET [ SMD non-matched ]
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted
efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions
or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit
of redundancy design, malfunction prevention design and other safety-related designs, to prevent
breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses
or other problems, thereby upholding the highest levels of safety in the products when in use by customers.
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8
Mitsubishi Electric
Sept. / 2009