PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA92 ISSUE 1 MARCH 94 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA92 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb=25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -0.25 µA VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-20mA, IB=-2mA Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-20mA, IB=-2mA Static Forward Current hFE Transfer Ratio 25 40 25 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* 6 3-65 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz