PD -96398A
AUTOMOTIVE GRADE
Features
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUIRFR4615
AUIRFU4615
HEXFET® Power MOSFET
l
VDSS
RDS(on) typ.
max.
ID
D
G
S
150V
34m:
42m:
33A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
D
D
S
G
G
DPak
AUIRFR4615
D
S
IPAK
AUIRFU4615
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
e
d
c
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
33
24
140
144
0.96
± 20
109
See Fig. 14, 15, 22a, 22b,
38
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300(1.6mm from case)
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
j
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
i
Typ.
Max.
Units
–––
–––
1.045
50
110
°C/W
–––
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/04/11
AUIRFR/U4615
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
RG(int)
Conditions
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
35
–––
–––
–––
–––
–––
0.19
34
–––
–––
–––
–––
–––
–––
–––
V VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 5mA
42
mΩ VGS = 10V, ID = 21A
5.0
V VDS = VGS, ID = 100μA
–––
S VDS = 50V, ID = 21A
VDS = 150V, VGS = 0V
20
μA
VDS = 150V, VGS = 0V, TJ = 125°C
250
VGS = 20V
100
nA
VGS = -20V
-100
Internal Gate Resistance
–––
2.7
–––
c
f
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
ID = 21A
VDS = 75V
nC
VGS = 10V
ID = 21A, VDS =0V, VGS = 10V
VDD = 98V
ID = 21A
ns
RG = 7.3Ω
VGS = 10V
VGS = 0V
VDS = 50V
(See Fig.5)
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V (See Fig.11)
VGS = 0V, VDS = 0V to 120V
f
f
h
g
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
c
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 21A, di/dt ≤ 549A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
33
A
–––
–––
140
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 25°C
VR = 100V,
TJ = 125°C
IF = 21A
di/dt = 100A/μs
TJ = 25°C
S
f
––– –––
1.3
V
–––
70
–––
ns
–––
83
–––
––– 177 –––
nC
TJ = 125°C
––– 247 –––
–––
4.9
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
Rθ is measured at TJ approximately 90°C
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AUIRFR/U4615
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
D PAK
MSL1
I-PAK
N/A
Class M3(+/- 400V )
AEC-Q101-002
†††
Class H1B(+/- 1000V )
AEC-Q101-001
Class C5(+/- 2000V )
AEC-Q101-005
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFR/U4615
1000
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
TOP
1
5.0V
0.1
100
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
5.0V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.1
0.01
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
3.0
TJ = 175°C
TJ = 25°C
10
1
VDS = 50V
≤60μs PULSE WIDTH
0.1
ID = 21A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
2
4
6
8
10
12
14
16
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
Ciss
1000
Coss
Crss
100
10
ID= 21A
12.0
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFR/U4615
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 175°C
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
1msec
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1.6
ID, Drain Current (A)
35
30
25
20
15
10
5
0
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
40
75
190
Id = 5mA
185
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
3.0
EAS , Single Pulse Avalanche Energy (mJ)
500
2.5
2.0
Energy (μJ)
1000
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
25
10
1.5
1.0
0.5
0.0
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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ID
TOP
2.8A
5.3A
BOTTOM 21A
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFR/U4615
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
τJ
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ1
τ2
τ3
τ2
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
τi (sec)
0.02324
0.000008
0.26212
0.000106
0.50102
0.001115
0.25880
0.005407
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
120
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 21A
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFR/U4615
30
25
IF = 14A
V R = 100V
20
TJ = 25°C
TJ = 125°C
5.5
5.0
4.5
4.0
3.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
6.0
ID = 100μA
3.0
ID = 250uA
10
ID = 1.0mA
ID = 1.0A
2.5
2.0
15
5
1.5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
35
800
IF = 21A
V R = 100V
30
IF = 14A
V R = 100V
700
TJ = 25°C
TJ = 125°C
25
TJ = 25°C
TJ = 125°C
600
20
QRR (A)
IRRM (A)
400
diF /dt (A/μs)
15
500
400
10
300
5
200
0
100
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
1000
IF = 21A
V R = 100V
900
800
TJ = 25°C
TJ = 125°C
QRR (A)
700
600
500
400
300
200
100
0
200
400
600
800
1000
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFR/U4615
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFR/U4615
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR4615
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR/U4615
I-Pak (TO-251AA) Package Outline
( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU4615
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4615
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRFR/U4615
Ordering Information
Base part
Package Type
AUIRFR4615
DPak
AUIRFU4615
IPak
12
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Complete Part Number
Quantity
75
2000
3000
3000
75
AUIRFR4615
AUIRFR4615TR
AUIRFR4615TRL
AUIRFR4615TRR
AUIRFU4615
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AUIRFR/U4615
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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performed.
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13