NDC CALIFORNIA MICRO DEVICES ISOLATED RESISTOR NETWORK California Micro Devices resistor arrays are the hybrid equivalent to the isolated resistor networks available in surface mount packages. The resistors are spaced on ten mil centers resulting in reduced real estate. These chips are manufactured using advanced thin film processing techniques and are 100% electrically tested and visually inspected. ELECTRICAL SPECIFICATIONS Test Condition Parameter TCR Operating Voltage Power Rating (per resistor) Thermal Shock High Temperature Exposure Moisture Resistance Life Noise -55°C to +125° -55°C to +125° @ 70°C (D erate linearly to zero @ 150°C) Method 107 MIL-STD -202F 100 Hrs @ 150°C Ambient Method 106 MIL-STD -202F Method 108 MIL-STD -202F (125°C/1000hr) Method 308 MIL-STD -202F ≥250kΩ MIL-R-83401 @25°C Short Time Overload Insulation Resistance ±100ppm/°C 50Vdc 50mw ±0.25%@∆R ±0.25%∆R ±0.5%∆R ±0.5%∆R -35 dB -30 dB 0.25% 1 X 1 0 12 Ω Max Max Max Max Max Max Max Max Max Max Min VALUES 90 8 resistors from 100Ω to 346Ω R1 R2 R3 R4 R5 R6 R7 R8 MECHANICAL SPECIFICATIONS 60 Substrate Isolation Layer Backing Metalization Formats Die Size: 90±3 x 60±3 mils Bonding Pads: 5x7 mils typical Passivation Silicon 10±2 mils thick SiO2 10,000Å thick, min Lapped (gold optional) Aluminum 10,000Å thick, min (15,000Å gold optional) Silicon nitride PACKAGING Two inch square trays of 196 chips maximum. NOTE S 1. Resistor pattern may vary from one value to another. CC Series 5003 Value First 3 digits are significant value. Last digit represents number of zeroes. R indicates decimal point. F PART NUMBER DESIGNATION N A G W Tolerance TCR D = ±0.5% No Letter =±100ppm F = ±1% A = ±50% G = ±2% B = ±25% J = ±5% K = ±10% M = ±20% Bond Pads G = Go l d No Letter=Aluminum Backing W = Go l d L = Lapped No Letter=Either P Ratio Tolerance No Letter=±1% P = ±0.5% C0820400 © 2000 California Micro Devices Corp. All rights reserved. 4/00 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1