Micross LS4416 N-channel high frequency jfet amplifier Datasheet

LS4416
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416
The LS4416 is a N-Channel high frequency JFET amplifier
The LS4416 N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-72 package is well suited
for military applications. The TO-92 package provides a
lower cost commercial option
LS4416 Benefits:
ƒ
ƒ
ƒ
ƒ
ƒ
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
10dB (min)
4dB (max)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
LS4416 Applications:
ƒ
ƒ
ƒ
ƒ
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4416
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐30V
LS4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
BVGSS
Gate to Source Breakdown Voltage
‐30
‐‐
‐‐
V
VGS(off)
Gate to Source Cutoff Voltage
‐‐
‐‐
‐6
V
IDSS
Gate to Source Saturation Current
5
‐‐
15
mA
IGSS
Gate Leakage Current
‐‐
‐‐
‐0.1
nA
gfs
Forward Transconductance
4500
‐‐
7500
µS
gos
Output Conductance
‐‐
‐‐
50
µS
Ciss
Input Capacitance2
‐‐
‐‐
0.8
pF
Crss
Reverse Transfer Capacitance2
‐‐
‐‐
4
pF
Coss
Output Capacitance2
‐‐
‐‐
2
pF
en
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
LS4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
MIN
MAX
MIN
MAX
CONDITIONS
IG = ‐1µA, VDS = 0V
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
VGS = ‐20V, VDS = 0V
VDS = 15V, VGS = 0V, f = 1kHz
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gIss
Input Conductance
‐‐
100
‐‐
1000
bIss
Input Susceptance2
‐‐
2500
‐‐
10000
goss
Output Conductance
‐‐
75
‐‐
100
boss
Output Susceptance2
‐‐
1000
‐‐
4000
Gfs
Forward Transconductance
‐‐
‐‐
4000
‐‐
2
18
‐‐
10
‐‐
2
‐‐
2
‐‐
4
Gps
Power Gain
NF
Noise Figure
NOTES
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
CONDITIONS
VDS = 15V, VGS = 0V
µS
dB
VDS = 15V, ID = 5mA
VDS = 15V, ID = 5mA, RG = 1kΩ
1 . Absolute maximum ratings are limiting values above which LS4416 serviceability may be impaired.
2. Not production tested, guaranteed by design
Micross Components Europe
Available Packages:
TO-72 (Bottom View)
TO-92 (Bottom View)
LS4416 in TO-72
LS4416 in TO-92
LS4416 in bare die.
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
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