Photodiode-Chip EPC-1300-0.22-4 16.05.2008 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side 150 typ. dimensions in µm typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIR-region and enhanced responsivity in the visible range, no rear side metalization 1 110 top side* bond gold 1.0 µm 100 460 ±20 220 110 rear side no metalization * Bond pad assigment: Pos. 1 - Anode Pos. 2 - Cathode 100 2 Applications Optical communications, safety equipment, light barriers 460 ±20 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.032 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C TC(ID) 7.4 %/K Typ Max Unit Active area Temperature coefficient of ID T = -40…120°C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 10 mA Forward voltage Breakdown voltage2) Symbol Min VF 1.7 V IR = 10 µA VR 5 Sensitivity range at 10 % VR = 0 V λ 440 Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm VR = 0 V Sλ 0.9 A/W Dark current VR = 5 V ID 30 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 1300 nm Specific detectivity λ = 1300 nm D* VR = 0 V CJ 1) Junction capacitance NEP V 1710 3 nm 200 pA 5 4.0x10 GΩ -15 W/ Hz 12 cm ⋅ Hz ⋅ W −1 4.5x10 11 pF 1) measured on bare chip on TO-18 header 2) for information only Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-1300-0.22-4 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Photodiode-Chip EPC-1300-0.22-4 16.05.2008 rev. 04 T y p ic a l O p tic a l R e s p o n s iv ity 1 ,2 Responsivity (A/W) 1 ,0 0 ,8 0 ,6 0 ,4 0 ,2 0 ,0 400 600 800 1000 1200 1400 1600 1800 W a v e le n g th [n m ] D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re Dark Current [nA] 100 T K = 0 .7 4 % /K 10 1 20 40 60 80 100 120 A m b ie n t T e m p e ra tu re [°C ] Short-Circuit Current [arb. units] S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] 1 ,0 4 1 ,0 2 1 ,0 0 0 ,9 8 T C (I S H ) = -0 .3 7 % /K 0 ,9 6 0 ,9 4 0 ,9 2 0 ,9 0 0 20 40 60 80 100 120 140 A m b ie n t T e m p e ra tu re [°C ] We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545