MBR40020CT thru MBR40040CTR
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 400 A
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R)
Unit
VRRM
20
30
35
40
V
VRMS
14
21
25
28
V
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current
(per pkg)
IF(AV)
TC = 125 °C
400
400
400
400
A
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
3000
3000
3000
3000
A
Maximum forward
voltage (per leg)
VF
IFM = 200 A, Tj = 25 °C
0.70
0.70
0.70
0.70
V
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.35
0.35
0.35
0.35
°C/W
Parameter
MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R)
Unit
Thermal characteristics
Thermal resistance,
junction-case, per leg
RΘJC
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MBR40020CT thru MBR40040CTR
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MBR40020CT thru MBR40040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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