MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 24 +/- 0.3 2MIN (1) FEATURES ・Internally impedance matched ・High output power P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz ・High linear power gain GLP = 6.0dB(TYP) @f=14.0-14.5GHz 0.6 +/- 0.15 8.0 +/- 0.2 (2) 2MIN 17.4 +/- 0.2 R 1.2 APPLICATION (3) ・For use in 14.0-14.5GHz band amplifiers 16.7 4.3 +/- 0.4 ・IG 1.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID(Rfoff) =6.0 (A) Rg=25 (ohm) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Reverse gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C 2.4 +/- 0.2 0.1 +/- 0.05 20.4 +/- 0.2 QUALITY GRADE (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-38 (Ta=25deg.C) Ratings -15 -10 20 -72 144 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm Parameter (Ta=25deg.C) Test conditions Saturated drain current VDS=3V,VG=0V Min. -- Transconductance VDS=0V,ID=6.0A -- VGS(off) Gate to source cut-off voltage P1dB Output power at 1dB gain compression GLP Linear power gain P.A.E. Power added efficiency Rth (Ch-C) Thermal resistance VDS=3V,ID=80mA VDS=10V, ID(RF off)=6.0A, f=14.0 - 14.5GHz Channel to Case MITSUBISHI ELECTRIC (1/4) Limits Typ. Max. 16.0 -6 -- Unit A S -1.0 -1.5 -4.0 V 43 44 -- dBm 5.0 6.0 -- dB -- 17 -- % -- 1.2 1.5 deg.C/W Jul-04 MGFK44A4045 OUTPUT POWER & POWER ADDED EFFICIENCY & GAIN vs. INPUT POWER TEST CONDITIONS : Vds(Rfoff)=10V,Ids(RFoff)=6.0A,Rg=25ohm Freqency=14.0GHz Freqency=14.2GHz Pout 45 Id RF 40 Pout 45 Gain Id RF 40 Id RF 40 25 20 15 10 5 Ig RF PAE 35 Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) Pout(dBm), Glp(dB), PAE(%), Id(A), Ig(mA) 30 30 25 20 15 10 5 30 25 20 15 10 5 0 0 -5 -5 -5 -10 -10 32 Pin(dBm) 37 42 PAE 35 0 27 Gain Ig RF PAE 22 Pout 45 Gain Ig RF 35 Freqency=14.5GHz -10 22 27 32 37 42 22 Pin(dBm) 27 32 37 42 Pin(dBm) MITSUBISHI ELECTRIC CORPORATION July'04 (2/4) MGFK44A4045 IM3 vs. OUTPUT POWER TEST CONDITIONS Vds(Rfoff)=10V,Ids(RFoff)=6.0A,Rg=25ohm 2-tone test Freqency=14.5GHz,14.51 -10 35 -20 35 -20 35 -20 30 -30 30 -30 30 -30 25 -40 Pout 25 IM3 -50 25 30 Pin(dBm)(S.C.L) 25 35 IM3 20 -50 20 25 30 -40 Pout IM3 20 20 -40 Pout Pout(dBm)(S.C.L) 40 IM3(dBc) -10 Pout(dBm)(S.C.L) 40 IM3(dBc) Freqency=14.20GHz14.21GHz -10 IM3(dBc) Pout(dBm)(S.C.L) Freqency=14.00GHz,14.01GHz 40 35 20 -50 20 Pin(dBm)(S.C.L) 25 30 35 Pin(dBm)(S.C.L) MITSUBISHI ELECTRIC CORPORATION July'04 (3/4) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK44A4045 14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC (4/4) July'04