2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1126-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL CHARACT ERIST IC CONDIT IONS MIN T YP MAX UNIT S BVCEO Collector-Emitter Voltage IC = 100 µA 500 Volts BVEBO Emitter-Base Voltage IE = 100 µA 20 Volts BVCBO Collector-Base Voltage IC = 100 µA 500 Volts ID Collector Current VCE = 10 Volts 30 nAmps hFE Beta VCE = 5 Volts, IC = 1 mA 25 Data Sheet # MSC1341.PDF Updated:October 1998 O p t o Pro d u c t s