CEM2539 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V. G1 RDS(ON) = 33mΩ @VGS = 2.5V. *1K G2 -20V, -4.0A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. S1 RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). S2 D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 ABSOLUTE MAXIMUM RATINGS 1 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Units V Gate-Source Voltage VGS ±12 ±12 V ID 7.5 -4.0 A IDM 25 -15 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 3. 2007.Sep. http://www.cetsemi.com Details are subject to change without notice . 1 CEM2539 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V Gate Body Leakage Current IGSS VGS = Gate Body Leakage Current IGSS VGS = Typ Max Units 1 µA ±10 ±10 µA Off Characteristics V ±12V, VDS = 0V ±12V, VDS = 0V µA On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics d gFS Forward Transconductance VGS = VDS, ID = 250µA 1.2 V VGS = 10V, ID = 6A 0.5 17 22 mΩ VGS = 4.5V, ID = 6A 20 24 mΩ VGS = 2.5V, ID = 5A 25 33 mΩ VDS = 15V, ID = 6A 15 S Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 0.35 0.7 µs 0.87 1.8 µs 3.60 7.5 µs Turn-Off Fall Time tf 2.01 4.3 µs Total Gate Charge Qg 4.3 5.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10V, ID = 5A, VGS = 4.5V 1.1 nC 2.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage VSD c VGS = 0V, IS = 1.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1.5 A 1.2 V CEM2539 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -20V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance Dynamic Characteristics RDS(on) VGS = VDS, ID = -250µA -0.5 V VGS = -10V, ID = -3.5A 70 -1 80 mΩ VGS = -4.5V, ID = -2.8A 80 100 mΩ VGS = -2.5V, ID = -2.0A 90 150 mΩ d Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -5V, ID = -3.5A VDS = -10V, VGS = 0V, f = 1.0 MHz 10 S 1175 pF 230 pF 130 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 14.4 28.8 ns 9 18 ns 72.8 145.6 ns Turn-Off Fall Time tf 35 70 ns Total Gate Charge Qg 10.6 14.1 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -10V, ID = -4A, VGS = -4.5V 1.5 nC 2.5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 -4.0 A -1.0 V CEM2539 N-CHANNEL 10 VGS=10,8,6,5,4V 20 15 VGS=2V 10 8 ID, Drain Current (A) ID, Drain Current (A) 25 5 5 6 4 25 C 2 -55 C TJ=125 C VTH, Normalized Gate-Source Threshold Voltage 2.2 1.9 0 3 6 9 0 0.0 12 2.0 2.5 Figure 2. Transfer Characteristics 1.3 1.0 0.7 1.2 1.5 Figure 1. Output Characteristics 1.6 1.3 1.0 VGS, Gate-to-Source Voltage (V) ID=6A VGS=10V 0.4 -100 0.5 VDS, Drain-to-Source Voltage (V) IS, Source-drain current (A) RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 0 -50 0 50 100 150 200 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 3. On-Resistance Variation with Temperature Figure 4. Body Diode Forward Voltage Variation with Source Current VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 4 CEM2539 P-CHANNEL 10 15 12 8 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=-10,-8,-6V 9 -VGS=2V 6 3 6 4 25 C 2 -55 C TJ=125 C 0 0 1 2 3 4 0 5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 750 500 Coss 250 Crss 0 2 4 6 8 10 2.2 1.9 ID=-3.5A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 2.0 Figure 8. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 Figure 7. Output Characteristics 1000 1.2 1.0 -VGS, Gate-to-Source Voltage (V) 1250 1.3 0.5 -VDS, Drain-to-Source Voltage (V) 1500 0 0 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CEM2539 5 V =10V DS ID=5A 10 3 2 1 0 0 1 2 3 4 5 10 0 10 -1 10 -2 100ms 1s DC 5 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 4 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 1 VDS, Drain-Source Voltage (V) 5 V =-6V DS ID=-3.5A 3 2 1 0 10ms 10 Qg, Total Gate Charge (nC) P-CHANNEL 0 2 RDS(ON)Limit 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 3 6 9 10 2 10 1 10 0 10 -1 10 12 -2 10 2 RDS(ON)Limit 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 10 2 CEM2539 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 5 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 17. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 10 Single Pulse -2 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2