PD -91623A
APPROVED
IRF3315
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 150V
RDS(on) = 0.07Ω
G
Description
ID = 27A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
27
19
108
136
0.91
± 20
350
12
13.6
2.5
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.1
–––
62
°C/W
1
12/09/98
IRF3315
APPROVED
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
150
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
11.4
–––
IDSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
Qg
Total Gate Charge
–––
Qgs
Gate-to-Source Charge
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
V(BR)DSS
Typ.
–––
0.187
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.6
32
49
38
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
300
160
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.07
Ω
VGS = 10V, ID = 12A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 12A
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
95
ID = 12A
11
nC VDS = 120V
47
VGS = 10V, See Fig. 6 and 13
–––
VDD = 75V
–––
ID = 12A
ns
–––
RG = 5.1Ω
–––
RD = 5.9Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
27
––– –––
showing the
A
G
integral reverse
––– ––– 108
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 12A, VGS = 0V
––– 174 260
ns
TJ = 25°C, IF = 12A
––– 1.2 1.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 4.9mH
RG = 25 Ω, IAS = 12A. (See Figure 12)
2
ISD ≤ 12A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
www.irf.com
IRF3315
APPROVED
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
INPUT NEW DATA
INPUT NEW DATA
100
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 50V
20µs PULSE WIDTH
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
R DS(on) , Drain-to-Source On Resistance
(Normalized)
INPUT NEW DATA
7.0
10
100
Fig 2. Typical Output Characteristics
3.0
6.0
1
VDS , Drain-to-Source Voltage (V)
1000
5.0
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
Fig 1. Typical Output Characteristics
1
4.0
4.5V
10
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
I D = 27A
2.5
INPUT NEW DATA
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF3315
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
VGS , Gate-to-Source Voltage (V)
20
3000
C, Capacitance (pF)
APPROVED
16
10
VDS = 120V
VDS = 75V
VDS = 30V
12
8
4
0
1
ID = 12 A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
20
VDS , Drain-to-Source Voltage (V)
40
60
80
100
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
10
INPUT NEW DATA
100
TJ = 175 ° C
INPUT NEW DATA
1
10us
100us
10
1ms
TJ = 25 ° C
0.1
0.3
V GS = 0 V
0.6
0.9
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
1.5
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF3315
APPROVED
30
RD
VDS
VGS
25
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
20
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
INPUT NEW DATA
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
INPUT NEW DATA
1
D = 0.50
0.20
P DM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF3315
APPROVED
1 5V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
1000
TOP
BOTTOM
800
ID
4.9A
8.5A
12A
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
V (B R )D SS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRF3315
APPROVED
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRF3315
APPROVED
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y
L O T C O D E 9 B 1M
A
IN TE R N A T IO N A L
R E C TIFIE R
LOGO
ASSEMBLY
L OT C O D E
PART NU MBER
IR F 1 0 10
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
www.irf.com