MSN2004W 200V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN2004W MSN2004W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V ID 3.9 A ID (100℃) 3 A Pulsed Drain Current IDM 30 A Maximum Power Dissipation PD 3 W TJ,TSTG -55 To 150 ℃ RθJC 41.7 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN2004W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 215 - V Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.7A - 56 79 mΩ gFS VDS=50V,ID=3.9A 7 - - S Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz Crss 4200 PF 163 PF 75 PF (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr td(off) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 15 - nS VDD=100V,ID=2.2A - 13 - nS VGS=10V,RGEN=6.5Ω - 26 - nS - 14 - nS - 38 - nC - 9 - nC - 15 - nC - - 1.2 V - - 4 A VDS=100V,ID=2.2A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=3.7A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN2004W Test Circuit 1）EAS test Circuit 2）Gate charge test Circuit 3）Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN2004W ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 Normalized BVdss C Capacitance (pF) MSN2004W TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature Vth (V) Variance ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN2004W SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6