Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 CYStech Electronics Corp. -80V P-Channel Enhancement Mode MOSFET MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1A -80V -2.2A 104mΩ(typ) 141mΩ(typ) Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD protected gate • Pb-free lead plating package Symbol Outline MTB110P08KN3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTB110P08KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTB110P08KN3 CYStek Product Specification Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation Linear Derating Factor (Note 3) Operating Junction and Storage Temperature Range Symbol VDS VGS Unit IDM PD Limits -80 ±20 -2.2 -1.8 -20 1.38 Tj ; Tstg 0.01 -55~+150 W/°C °C ID V A W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Limit Unit Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf MTB110P08KN3 Min. Typ. Max. Unit -80 -1.0 - 0.08 104 141 5.2 -2.5 ±10 -1 -10 135 185 - V V/°C V - 537 52 37 7.4 17.4 36 24.8 - Test Conditions S VGS=0V, ID=-250μA Reference to 25°C, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-80V, VGS=0V VDS=-64V, VGS=0V (Tj=70°C) ID=-2A, VGS=-10V ID=-1A, VGS=-4.5V VDS=-10V, ID=-2A pF VDS=-30V, VGS=0V, f=1MHz ns VDS=-40V, ID=-1A, VGS=-10V RG=10Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. Qg Qgs Qgd Source-Drain Diode *VSD Trr Qrr Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 3/9 - 7.4 2.2 3.2 - nC VDS=-40V, ID=-2A, VGS=-5V - -0.8 14 9.5 -1.2 - V ns nC VGS=0V, IS=-2A VGS=0V, IF=-2A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTB110P08KN3 CYStek Product Specification Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 18 -I D, Drain Current(A) 16 14 12 -BVDSS, Normalized Drain-Source Breakdown Voltage 20 5V 10 8 -VGS=4V 6 4 -VGS=3.5V 2 -VGS=3V 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) 1.2 1.0 0.8 0.6 ID=-250μA, VGS=0V 0.4 -75 -50 -25 5 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 180 160 -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 200 VGS=-4.5V 140 120 100 VGS=-10V 80 60 40 Tj=25°C VGS=0V 1.0 0.8 Tj=150°C 0.6 0.4 20 0.2 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 -IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.0 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-2A 800 600 400 200 1.8 VGS=-10V, ID=-2A 1.6 1.4 1.2 1.0 0.8 0.6 RDS(ON) @Tj=25°C : 104mΩ typ 0.4 0 0 MTB110P08KN3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss f=1MHz 1.4 1.2 ID=-1mA 1.0 0.8 0.6 ID=-250μA 0.4 0.2 10 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=-16V -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 1 0.1 VDS=-10V Pulsed Ta=25°C 0.01 0.001 8 VDS=-40V 6 4 2 ID=-2A 0 0.01 0.1 1 -ID, Drain Current(A) 0 10 Maximum Safe Operating Area 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 2.5 RDS(ON) Limited 10 -I D, Maximum Drain Current(A) -I D, Drain Current (A) 2 Maximum Drain Current vs Junction Temperature 100 100μs 1 1ms 10ms 0.1 VDS=-64V TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=90°C/W, single pulse 100ms DC 1s 0.01 2 1.5 1 0.5 VGS=-10V, Tj(max)=150°C, RθJA=90°C/W, single pulse 0 0.1 MTB110P08KN3 1 10 100 -VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 300 20 VDS=-10V 250 Power (W) -ID, Drain Current(A) 16 12 8 TJ(MAX) =150°C TA=25°C RθJA=90°C/W 200 150 100 4 50 0 0 1 2 3 4 5 6 0 0.0001 0.001 -VGS, Gate-Source Voltage(V) 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB110P08KN3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB110P08KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB110P08KN3 CYStek Product Specification Spec. No. : C123N3 Issued Date : 2015.11.09 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOT-23 Dimension Marking: TE BHP8 Device Code XX Date Code 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB110P08KN3 CYStek Product Specification