Central CBR25-060P Silicon bridge rectifier Datasheet

CBR25-010P SERIES
w w w. c e n t r a l s e m i . c o m
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 1000 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR25-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL -010P -020P
Peak Repetitive Reverse Voltage
VRRM
100
200
DC Blocking Voltage
VR
100
200
RMS Reverse Voltage
Average Forward Current (TC=60°C)
Peak Forward Surge Current
I2t
Rating for Fusing (1ms<t<8.3ms)
RMS Isolation Voltage (case to lead)
Operating and Storage
Junction Temperature
Thermal Resistance
VR(RMS)
IO
70
140
CBR25
-040P -060P
400
600
-080P
800
-100P
1000
UNITS
V
400
600
800
1000
V
280
420
560
700
V
25
A
IFSM
I2t
350
A
375
A2s
Viso
2500
Vac
TJ, Tstg
ΘJC
-65 to +150
°C
1.9
°C/W
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VR=Rated VRRM
10
VR=Rated VRRM, TA=125°C
500
VF
IF=12.5A
CJ
VR=4.0V, f=1.0MHz
1.2
300
UNITS
μA
μA
V
pF
R3 (24-June 2013)
CBR25-010P SERIES
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 1000 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R3 (24-June 2013)
w w w. c e n t r a l s e m i . c o m
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