CBR25-010P SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS 25 AMP, 100 THRU 1000 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR25-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals. MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P -020P Peak Repetitive Reverse Voltage VRRM 100 200 DC Blocking Voltage VR 100 200 RMS Reverse Voltage Average Forward Current (TC=60°C) Peak Forward Surge Current I2t Rating for Fusing (1ms<t<8.3ms) RMS Isolation Voltage (case to lead) Operating and Storage Junction Temperature Thermal Resistance VR(RMS) IO 70 140 CBR25 -040P -060P 400 600 -080P 800 -100P 1000 UNITS V 400 600 800 1000 V 280 420 560 700 V 25 A IFSM I2t 350 A 375 A2s Viso 2500 Vac TJ, Tstg ΘJC -65 to +150 °C 1.9 °C/W ELECTRICAL SYMBOL IR IR CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS TYP MAX VR=Rated VRRM 10 VR=Rated VRRM, TA=125°C 500 VF IF=12.5A CJ VR=4.0V, f=1.0MHz 1.2 300 UNITS μA μA V pF R3 (24-June 2013) CBR25-010P SERIES SILICON BRIDGE RECTIFIERS 25 AMP, 100 THRU 1000 VOLT CASE FP - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (24-June 2013) w w w. c e n t r a l s e m i . c o m