TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol 2N5415 2N5416 Units VCEO VCBO VEBO IC 200 200 300 350 Vdc Vdc Vdc Adc W W 0 C 6.0 1.0 0.75 10 -65 to +200 PT Top, Tstg TO- 5* 2N5415, 2N5416 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 Unit C/W 0 2N5415S, 2N5416S TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 50 1.0 50 1.0 µAdc mAdc µAdc mAdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415 2N5416 2N5416 ICEO IEBO 20 2N5415 2N5416 ICEX 50 50 2N5415 2N5416 ICBO1 50 50 2N5415 2N5416 ICBO2 500 500 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 µAdc µAdc µAdc µAdc µAdc 120101 Page 1 of 2 2N5415, 2N5416 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 30 15 120 Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Voltage IC = 50 mAdc, VCE = 10 Vdc 2.0 VCE(sat) 1.5 VBE Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz Forward Current Transfer Ratio IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 5.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Forward hfe 3.0 hfe 25 15 Cobo 15 pF Cibo 75 pF t on 1.0 µs off 10 µs SWITCHING CHARACTERISTICS Turn-On Time VCC =200 Vdc, IC = 50 mAdc, IB1= 5.0 mAdc Turn-Off Time VCC = 200 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc t SAFE OPERATING AREA DC Tests TC = +250C; 1 Cycle; t = 0.4 s Test 1 VCE = 10 Vdc, IC = 1.0 Adc Test 2 VCE = 100 Vdc, IC = 100 mAdc Test 3 VCE = 200 Vdc, IC = 24 mAdc 2N5415 Test 4 VCE = 300 Vdc, IC = 10 mAdc 2N5416 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2