Sirectifier BTA15-200 Discrete triac Datasheet

BTA15
Discrete Triacs(Isolated)
T2
G
T1
BTA15-200
BTA15-400
BTA15-600
BTA15-800
BTA15-1000
BTA15-1200
VDRM/RRM
VDSM/RSM
V
200
400
600
800
1000
1200
V
300
500
700
900
1100
1300
A B S O L U T E M A X IM U M R A T IN G S
Parame ter
Symbol
IT(RMS)
ITSM
I²t
dI/dt
PG(AV)
Tstg
Tj
Unit
RMS on-state current (full sine wave)
TO-220AB
Tc = 100°C
15
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
160
168
A
144
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
IG = 2 x IGT , tr <
tp = 10 ms
VDSM /VRSM Non repetitive surge peak off-state
voltage
IGM
Value
Peak gate current
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
V DRM /VRRM
+ 100
V
tp = 20 µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS
(T j = 25° C, unl es s o the rw ise spec ified )
■ S NUBBE RL ES and LOGIC LEVEL(3 Quadrants)
Symbo l
IGT
VGT
Test Conditions
VD = 12 V
RL = 33 Ω
VGD
VD = VDRM RL = 3.3 kΩ
IH
IT = 500 mA
IL
Quadran t
Tj = 125°C
BTA
(dI/dt)c
P1
BW
35
50
mA
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
IG = 1.2 IGT
I - III
MAX.
35
50
mA
MAX.
50
70
mA
60
80
II
dV/dt
Unit
CW
VD = 67 % VDRM gate open Tj = 125°C
MIN.
500
1000
V/µs
Without snubber
MIN.
8.5
14
A/ms
Tj = 125°C
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Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
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BTA15
Discrete Triacs(Isolated)
■
STANDARD (4 Quadrants)
Symbol
Test Conditions
I GT
VD = 12 V
VGT
VGD
VD = VDRM
IH
IT = 500 mA
IL
IG = 1.2 IGT
Quadrant
RL = 33 Ω
RL = 3.3 Ω
Value
Unit
I - II - III
IV
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
50
mA
MAX.
60
Tj = 125°C
I - III - IV
II
dV/dt
(dV/dt)c
mA
120
VD = 67 % VDRM gate open Tj = 125°C
MIN.
400
V/µs
(dI/dt)c =7A/ms
MIN.
10
V/µs
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM
ITM = 15 A
Vto
tp = 380 µs
Value
Unit
Tj = 25°C
MAX.
1.5 5
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
60
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
1
mA
IRRM
Tj = 125°C
MAX.
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.2
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
TO-220AB
Weight
Base
quantity
Packing
mode
250
Bulk
200 V ~~ 100 V
BTA15
X
X
OTHER INFORMATION
Part Number
BTA15
P2
Marking
BTA15
2g
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
BTA15
Discrete Triacs(Isolated)
F ig. 1: Maximum power dis s ipa tion vers us R MS
on-s tate current (full cycle).
20
18
16
14
12
10
8
6
4
2
0
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
P (W)
IT (R MS ) (A )
IT (R MS ) (A )
0
2
4
6
8
10
12
14
16
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
1E +0
18
16
14
12
10
8
6
4
2
0
B TB
B TA
T c (° C )
0
25
F ig. 4:
values )
50
O n-s tate
200
chara cteris tics
125
(ma ximum
T j max
100
Zth(j-c )
1E -1
Zth(j-a)
10
T j=25° C
tp (s )
1E -2
100
IT M (A )
K =[Zth/R th]
1E -2
1E -3
75
1E -1
1E +0
T j max:
V to = 0.85 V
R d = 25 mΩ
V T M (V )
1E +1
1E +2 5E +2
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F ig. 5: S urge peak on-s tate current versus
number of cycles.
180
160
140
120
100
80
60
40
20
0
P3
IT S M (A )
t=20ms
One cycle
Non repetitive
T j initial=25°C
R epetitive
T c=85°C
Number of cycles
1
10
100
1000
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
BTA15
Discrete Triacs(Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
IT S M (A ), I² t (A ² s )
2.5
3000
T j initial=25°C
2.0
IG T
dI/dt limitation:
50A /µs
1000
1.5
1.0
IT S M
IH & IL
0.5
I²t
tp (ms )
100
0.01
0.10
1.00
T j(° C )
10.00
F ig. 8:
R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).
C
1.6
1.4
20
40
60
80
100
120
140
F ig. 9: R elative variation of critical rate of
decreas e of main current vers us junction
temperature.
5
4
B
B W/C W/T 1635
1.0
3
2
0.8
0.6
P4
0
6
SW
1.2
0.4
0.1
-20
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
0.0
-40
1
(dV /dt)c (V /µs )
1.0
10.0
100.0
0
T j (° C )
0
25
50
75
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
100
125
www.sirectifier.com
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