SavantIC Semiconductor Product Specification BD810 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD809 ·DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A IB Base current -6 A PD Total power dissipation 90 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.39 /W SavantIC Semiconductor Product Specification BD810 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.1 V VBE Base-emitter voltage IC=-4A ; VCE=-2V -1.6 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 30 hFE-2 DC current gain IC=-4A ; VCE=-2V 15 Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 1.5 fT CONDITIONS 2 MIN TYP. MAX -80 UNIT V MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD810