IRF8308MPbF DirectFET Power MOSFET RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 28nC 8.2nC 3.5nC 34nC 20nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested l MX Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MT MX DirectFET ISOMETRIC MP Description The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dtinduced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Orderable part number Package Type IRF8308MTRPbF IRF8308MTR1PbF DirectFET Medium Can DirectFET Medium Can Standard Pack Form Quantity Tape and Reel 4800 Tape and Reel 1000 Note "TR" suffix "TR1" suffix EOL notice # 264 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g h VGS, Gate-to-Source Voltage (V) Typical R DS (on) (mΩ) 8 ID = 27A 6 4 TJ = 125°C 2 TJ = 25°C 0 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 Fig 1. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. 1 e e f www.irf.com © 2014 International Rectifier Max. Units 30 ±20 27 21 150 212 12 21 V A mJ A 12 ID= 21A 10 VDS = 24V VDS= 15V 8 6 4 2 0 0 20 40 60 80 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A. Submit Datasheet Feedback February 24, 2014 IRF8308MPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Conditions Typ. Max. Units VGS = 0V, ID = 250μA BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 22 RDS(on) Static Drain-to-Source On-Resistance ––– 1.90 ––– 2.70 mV/°C Reference to 25°C, ID = 1mA 2.50 mΩ VGS = 10V, ID = 27A VGS = 4.5V, ID = 21A 3.50 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th)/ΔTJ IDSS Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C Drain-to-Source Leakage Current ––– ––– 1.0 μA IGSS gfs Qg Qgs1 Gate-to-Source Forward Leakage V ––– ––– ––– 150 ––– ––– 100 i i VDS = VGS, ID = 100μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 130 ––– ––– Total Gate Charge ––– 28 42 Pre-Vth Gate-to-Source Charge ––– 8.4 ––– VDS = 15V VGS = 4.5V S VDS = 15V, ID =21A Qgs2 Post-Vth Gate-to-Source Charge ––– 3.5 ––– Qgd Gate-to-Drain Charge ––– 8.2 ––– ID = 21A Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 7.9 ––– See Fig. 15 Qsw ––– 12 ––– Qoss Output Charge ––– 20 ––– nC RG Gate Resistance ––– 1.2 2.2 Ω td(on) Turn-On Delay Time ––– 11 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 19 ––– ID = 21A td(off) Turn-Off Delay Time ––– 23 ––– tf Fall Time ––– 16 ––– Ciss Input Capacitance ––– 4404 ––– Coss Output Capacitance ––– 885 ––– Crss Reverse Transfer Capacitance ––– 424 ––– nC ns VDS = 16V, VGS = 0V i RG= 1.8Ω VGS = 0V pF VDS = 15V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current Min. ––– ––– MOSFET symbol 150 (Body Diode) ISM A Pulsed Source Current g ––– Conditions Typ. Max. Units ––– showing the 212 integral reverse VSD Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 21A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF =21A Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 300A/μs (Body Diode) i i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF Absolute Maximum Ratings e e f Max. Units 2.8 1.8 89 270 -40 to + 150 W Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG °C Thermal Resistance Parameter el jl kl fl RθJA RθJA RθJA RθJC RθJ-PCB Typ. Max. Units ––– 12.5 20 ––– 1.0 45 ––– ––– 1.4 ––– °C/W Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e 0.022 W/°C 100 Thermal Response ( ZthJA ) D = 0.50 10 0.20 0.10 0.05 1 R1 R1 0.02 τJ 0.01 τJ τ1 R2 R2 R3 R3 R4 R4 τa τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.1 SINGLE PULSE ( THERMAL RESPONSE ) Ri (°C/W) τι (sec) 0.99292 0.000074 2.171681 0.007859 24.14602 0.959 17.69469 32.6 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized Rθ is measured at TJ of approximately 90°C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). 3 Mounted to a PCB with small clip heatsink (still air) www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) February 24, 2014 IRF8308MPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 10 2.5V 1 100 BOTTOM VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 2.5V 10 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics 1000 2.0 VGS = 4.5V Typical RDS(on) (Normalized) ID, Drain-to-Source Current(Α) ID = 27A 100 TJ = 150°C TJ = 25°C TJ = -40°C 10 1 VGS = 10V 1.5 1.0 VDS = 10V ≤60μs PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 0.5 4.0 -60 -40 -20 0 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 6 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Typical RDS (on) (mΩ) C, Capacitance(pF) Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V 5 Coss = Cds + Cgd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 Crss 4 3 2 TJ = 25°C 1 100 1 10 0 100 VDS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 40 60 80 100 ID, Drain Current (A) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 20 Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage Submit Datasheet Feedback February 24, 2014 IRF8308MPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 TJ = 150°C TJ = 25°C 100.0 TJ = -40°C 10.0 1.0 VGS = 0V 0.4 0.6 0.8 1.0 100 10 100μsec 10msec 1 TA = 25°C Tj = 150°C Single Pulse 0.1 1.2 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 150 ID, Drain Current (A) 1msec 0.1 0.1 0.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 50 2.0 ID = 100μA 1.5 1.0 0.5 0 25 50 75 100 125 -75 150 -50 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) TC , Case Temperature (°C) Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Case Temperature EAS, Single Pulse Avalanche Energy (mJ) -25 50 I D 7.2A 8.4A BOTTOM 21A TOP 40 30 20 10 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS tp D.U.T V RGSG + - VDD IAS 20V tp A I AS 0.01Ω Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Submit Datasheet Feedback February 24, 2014 IRF8308MPbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. Re-Applied Voltage + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G = GATE D = DRAIN S = SOURCE D D S G S D D Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF DirectFET™ Outline Dimension, MX Outline (Medium Size Can, X-Designation) Please see AN-1035 for DirectFET assembly details, stencil and substrate design recommendations DIMENSIONS CODE A B C D E F G H J K L M R P METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.68 0.72 0.68 0.72 1.38 1.42 0.80 0.84 0.38 0.42 0.88 1.02 2.28 2.42 0.59 0.70 0.03 0.08 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.189 0.199 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.031 0.033 0.015 0.017 0.035 0.040 0.090 0.095 0.023 0.028 0.001 0.003 0.003 0.007 Dimensions are shown in millimeters (inches) DirectFET Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF DirectFET Tape & Reel Dimension (Showing component orientation). NO TE: Controlling dim ensions in m m Std reel quantity is 4800 parts (ordered as IRF 8308M TR PBF). R EEL DIM EN SIO NS STAN D ARD OPTION (Q TY 4800) M ET RIC IM PER IAL M IN M IN M AX C OD E M AX 12.992 A 330.0 N .C N .C 0.795 B 20.2 N .C N .C 0.504 C 12.8 0.520 13.2 0.059 D 1.5 N .C N .C 3.937 E 100.0 N .C N .C F N .C N .C 0.724 18.4 0.488 G 12.4 0.567 14.4 H 0.469 11.9 0.606 15.4 LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 8.10 7.90 0.319 0.154 0.161 4.10 3.90 0.469 0.484 12.30 11.90 0.215 5.45 0.219 5.55 0.201 5.10 0.209 5.30 0.256 6.70 6.50 0.264 0.059 N.C 1.50 N.C 0.059 1.60 1.50 0.063 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF † Qualification Information Consumer †† Qualification level (per JEDEC JESD47F††† guidelines) Comments: This family of products has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level MSL1 DFET2 (per JEDEC J-STD-020D†††) RoHS Compliant Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Revision History Date 2/24/2014 Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264) • Added Qualification table on page 10 • Updated data sheet with new IR corporate template IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014