Plastic-Encapsulate Transistors FEATURES MMST4403 (PNP) Epitaxial planar die construction. Complementary PNP type available(MMST4401). Ultar-small surface mount package. Marking:K3T MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -600 mA Collector Power Dissipation PC 200 mW Tstg -55 to +150 Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE 2. EMITTER SOT-323 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Collector-base breakdown voltage VCBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage VEBO IE=-100μA,IC=0 -5 V Collector cut-off current ICEX VCE=-35V,VEB(OFF)=-0.4V -0.1 μA IBL VCE=-35V,VEB(OFF)=-0.4V -0.1 μA IC=-150mA, IB=-15mA 300 -0.4 V IC=-500mA, IB=-50mA -0.75 IC=-150mA, IB=-15mA -0.95 IC=-500mA, IB=-50mA -1.3 Base cut-off current DC current gain hFE Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-1V,IC=-0.1mA 30 VCE=-1V,IC=-1.0mA 60 VCE=-1V,IC=-10mA 100 VCE=-2V,IC=-150mA 100 VCE=-2V,IC=500mA 20 Typ Max Unit V fT VCE=-10V,IC= -1.0mA, f=1.0kHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 8.5 pF Delay time Td VCC=-30V,VBE(off)=-2V, 15 nS Rise time tr IC=-150mA,IB1=-15mA 20 nS Storage time ts VCC=-30V,IC=-150mA, 225 nS tf IB1=IB2=-15mA 30 nS Transition frequency Fall time GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. 200 MHz Page:P2-P1 Plastic-Encapsulate Transistors MMST4403 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2