Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 1/ 9 CYStech Electronics Corp. Dual P-Channel Enhancement Mode MOSFET MTA300B02KS6R Features • Low on-resistance • ESD protected gate • High speed switching • Low-voltage drive • Easily designed drive circuits • Easy to use in parallel • Pb-free lead plating and halogen-free package Equivalent Circuit BVDSS ID @ VGS=-4.5V, TA=25°C VGS=-4.5V, ID=-650mA RDSON(TYP) VGS=-2.5V, ID=-650mA VGS=-1.8V, ID=-650mA -20V -1.15A 158mΩ 219mΩ 342mΩ Outline MTA300B02KS6R SOT-363 Tr2 Tr1 Ordering Information Device Package SOT-363 MTA300B02KS6R-0-T1-G (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTA300B02KS6R CYStek Product Specification Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 2/ 9 CYStech Electronics Corp. The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-4.5V (Note 1) Continuous Drain Current @VGS=-2.5V (Note 1) Continuous Drain Current @VGS=-4.5V (Note 2) Continuous Drain Current (Note 2) @VGS=-2.5V TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C TA=25°C TA=85°C Pulsed Drain Current, tp=300μs, duty ≤5% Total Power Dissipation (Note 1) Total Power Dissipation (Note 2) Operating Junction and Storage Temperature Range Symbol Limits VDSS VGSS -20 ±12 -1060 -765 -900 -645 -1150 -830 -970 -706 -4800 300 350 -55~+150 ID ID ID ID IDP PD Tj ; Tstg Unit V mA mW °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, Steady state Thermal Resistance, Junction-to-Ambient, Steady state Thermal Resistance, Junction-to-Case Symbol (Note 1) (Note 2) RθJA RθJC Limit 417 357 120 Unit °C/W Note : 1. Surface mounted on FR-4 board of minimum copper pad, t≤5s. 2. Surface mounted on FR-4 board of 1 in² copper pad, 2 oz copper, t≤5s. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* -20 VGS(th) -0.5 -1.2 IGSS ±10 1 IDSS 5 158 260 RDS(ON)* 219 350 342 800 GFS 1.7 MTA300B02KS6R Unit V μA mΩ S Test Conditions VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±10V, VDS=0V VDS=-16V, VGS=0V VDS=-16V, VGS=0V, Tj=85°C VGS=-4.5V, ID=-650mA VGS=-2.5V, ID=-650mA VGS=-1.8V, ID=-650mA VDS=-10V, ID=-500mA (Note 1) (Note 2) (Note 1) (Note 1) (Note 1) CYStek Product Specification CYStech Electronics Corp. Dynamic Ciss Coss Crss Qg Qgs Qgd td(ON) tr td(OFF) tf Source-Drain Diode VSD trr Qrr - 181 38 28 2.6 0.6 0.7 6.4 18.8 17 15.8 - - -0.91 4.6 1.0 -1.2 - Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 3/ 9 pF VDS=-10V, VGS=0V, f=1MHz nC VDS=-10V, VGS=-4.5V, ID=-1A ns VDD=-10V, ID=-500mA, VGS=-4.5V, RG=20Ω V ns nC VGS=0V, IS=-1A (Note 1) IF=-0.5A, dIF/dt=100A/μs Note :1. Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%. 2. Guaranteed by design, not subject to production testing. Recommended Soldering Footprint MTA300B02KS6R CYStek Product Specification Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V, 6V, 5V, 4.5V,4V,3.5V,3V,2.5V 3.5 -I D, Drain Current(A) -BVDSS, Normalized Drain-Source Breakdown Voltage 4.0 3.0 2.5 VGS=-2 V 2.0 1.5 1.0 1.2 1.0 0.8 ID=-250μA, VGS=0V 0.6 0.5 0.4 0.0 0 1 2 3 4 -75 -50 -25 5 -VDS, Drain-Source Voltage(V) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VGS=-3V VGS=-4.5V -VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(Ω) 1.2 100 0.001 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=125°C 0.4 0.2 0.01 0.1 ID, Drain Current(A) 0 1 0.2 0.4 0.6 0.8 -IDR , Reverse Drain Current(A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2 900 R DS(ON) , Normalized Static DrainSource On-State Resistance 1000 R DS(ON) , Static Drain-Source OnState Resistance(Ω) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-300mA 800 700 ID=-650mA 600 500 400 300 200 100 1.8 VGS=-4.5V, ID=-650mA 1.6 1.4 1.2 1 0.8 0.6 RDS(ON) @Tj=25°C : 158mΩ typ. 0.4 0 0 MTA300B02KS6R 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 5/ 9 Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th), Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss 100 C oss Crss 1.4 1.2 ID=-1mA 1.0 0.8 0.6 ID=-250μA 0.4 0.2 10 0 3 6 9 12 -VDS, Drain-Source Voltage(V) -75 -50 -25 15 Maximum Safe Operating Area Maximum Drain Current vs JunctionTemperature 1.2 100μs 1 -ID, Maximum Drain Current(A) -I D, Drain Current (A) 10 1ms 10ms 0.1 100ms TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=357°C/W Single Pulse 0.01 DC 0.001 1 0.8 0.6 0.4 0.2 TA=25°C, VGS=-4.5V, RθJA=357°C/W 0 0.01 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 Forward Transfer Admittance vs Drain Current 75 100 125 Tj, Junction Temperature(°C) 150 175 Gate Charge Characteristics 10 10 VDS=-10V -VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 1 VDS=-15V 0.1 Pulsed Ta=25°C 0.01 0.001 MTA300B02KS6R 8 6 4 VDS=-10V ID=-1A 2 0 0.01 0.1 1 -ID, Drain Current(A) 10 0 1 2 3 4 Qg, Total Gate Charge(nC) 5 6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 6/ 9 Typical Characteristics (Cont.) Single Pulse Power Rating, Junction to Case Ambient Typical Transfer Characteristics 25 4.0 VDS=-5V 3.5 TJ(MAX) =150°C TA=25°C RθJA=357°C/W 20 Power (W) -I D, Drain Current(A) 3.0 2.5 2.0 1.5 1.0 15 10 5 0.5 0.0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA (t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA =357 °C/W 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTA300B02KS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTA300B02KS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTA300B02KS6R CYStek Product Specification Spec. No. : C982S6R Issued Date : 2017.02.07 Revised Date : Page No. : 9/ 9 CYStech Electronics Corp. SOT-363 Dimension HB2 Device Code XX Marking: Date Code 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R Style: Pin 1. Source1 (S1) Pin 2. Gate1 (G1) Pin 3. Drain2 (D2) Pin 4. Source2 (S2) Pin 5. Gate2 (G2) Pin 6. Drain1 (D1) Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA300B02KS6R CYStek Product Specification