DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2722 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2722 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 900 MHz - 3 dB bandwidth, and a port to port crosstalk and isolation at - 49 dB. Processed with high density sub micron CMOS, the DG2722 provide low parasitic capacitance. Signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 pS. The DG2722 is designed for a wide range of operating voltages, from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip circuitry protects against conditions when either the D+/D- lines are shorted to the VBUS at the USB port. Additionally, logic control pins (S and OE) can tolerate the presence of voltages that are above the supply power rail (V+). The control logic threshold is guaranteed to be (VIH = 1.3 V/min). Latch up current is 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free "-E4" suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of Vishay Siliconix's commitment, the DG2722 is fully RoHS complaint. • • • • • • • • • • • • Wide operation voltage range Low on-resistance, 7 Ω (typical at 3 V) Low capacitance, 5.6 pF (typical) RoHS COMPLIANT 3 dB high bandwidth: 900 MHz (typical) Low bit to bit skew: 40 pS (typical) Low power consumption Low logic threshold: V Power down protection: D+/D- pins can tolerate up to 5 V when V+ = 0 V Logic (S and OE) above V+ tolerance 8 kV ESD protection (HBM) Latch-up current 300 mA per JESD78 Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) APPLICATIONS • Cellular phones • • • • • Portable media players PDA Digital camera GPS Notebook computer • TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 8 V+ 9 S 10 HSD1- 7 6 Control OE HSD1+ miniQFN-10L 5 HSD2+ 4 HSD2- 3 GND Rx 1 Top View Document Number: 68379 S-82507-Rev. B, 13-Oct-08 D- D+ Pin 1: LONG LEAD 2 Pin 1 Device marking: Rx for DG2722 x = Date/Lot Traceability Code www.vishay.com 1 DG2722 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number - 40 °C to 85 °C miniQFN-10 DG2722DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS OE (Pin 8) S (Pin 10) Function Pin Name Description 0 0 D+ = HSD1+ and D- = HSD1- OE Bus Switch Enable 0 1 D+ = HSD2+ and D- = HSD2- S Select Input 1 X Disconnect HSD1±, HSD2±, D± Data Port ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter V+ Reference to GND S, OE, D±, HSD1±, HSD2±a Current (Any Terminal except S, OE, D±, HSD1±, HSD2±) Continuous Current (S, OE, D±, HSD1±, HSD2±) Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) Storage Temperature (D Suffix) Limit - 0.3 to 5.0 - 0.3 to (V+ + 0.3) 30 ± 250 ± 500 - 65 to 150 208 8 300 Unit V mA °C mW Power Dissipation (Packages)b miniQFN-10c ESD (Human Body Model) I/O to GND kV Latch-up (Current Injection) mA Notes: a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. SPECIFICATIONS V+ = 3.0 V Parameter Symbol Test Conditions Otherwise Unless Specified VANALOG RDS(on) Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b Unit Analog Switch Analog Signal Ranged Full 0 Room V+ 7 RDS(on) V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V ΔRON V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room 0.8 RON Flatness V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.0 V, 1.0 V Room 2.0 Switch Off Leakage Current I(off) V+ = 4.3 V, VHSD1/2± = 0.3 V, 3.0 V, VD± = 3.0 V, 0.3 V Full - 100 100 Channel On Leakage Current I(on) V+ = 4.3 V, VHSD1/2± = 0.3 V, 4.0 V, VD± = 4.0 V, 0.3 V Full - 200 200 V+ = 3.0 V to 3.6 V Full 1.3 V+ = 4.3 V Full 1.5 V+ = 3.0 V to 4.3 V Full On-Resistance On-Resistance Matchd On-Resistance Resistance Flatnessd Full V 8 9 Ω nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance CIN Input Current www.vishay.com 2 IINL or IINH Full VIN = 0 or V+ Full V 0.5 5.6 -1 pF 1 µA Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix SPECIFICATIONS V+ = 3.0 V Parameter Symbol Test Conditions Otherwise Unless Specified Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b Unit 30 ns Dynamic Characteristics Break-Before-Make Timee, d Room tBBM Enable Turn-On Timee, d tON(EN) Enable Turn-Off Timee, d tOFF(EN) 5 Full V+ = 3.0 V, VD1/2 ± = 1.5 V, RL = 50 Ω, CL = 35 pF Room Full Room 25 Full Charge Injectiond QINJ CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V 0.5 Off-Isolationd OIRR - 30 Crosstalkd XTALK V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF, f = 240 MHz - 45 BW V+ = 3.0 V to 3.6 V, RL = 50 Ω, - 3 dB 900 Bandwidthd Channel-Off Capacitanced Channel-On Capacitance d Channel-to-Channel Skewd Skew Off Opposite Transitions of the Same Outputd Total Jitterd CD1± (off) 1.3 CD2± (off) 1.3 CD± (off) V+ = 3.3 V, f = 1 MHz Room dB MHz pF 2.7 CD± (on) 6.5 tSK(O) 50 tSK(p) pC V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF ps 20 tJ 200 Power Supply Power Supply Range V+ Power Supply Current I+ 2.6 VIN = 0 V, or V+ Full 4.3 V 2 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 3 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 28 26 V+ = 2.6 V 24 V+ = 3.0 V V+ = 2.6 V ION = 8 mA 25 22 RON - On-Resistance (Ω) RON - On-Resistance (Ω) T = 25 °C IS = 8 mA D1± V+ = 3.3 V 20 V+ = 3.6 V 18 V+ = 4.3 V 16 14 12 10 8 + 85 °C 20 + 25 °C 15 10 - 40 °C 5 6 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 0 0.5 1 VD - Analog Voltage (V) 2.5 3 RON vs. Analog Voltage and Temperature 25 25 V+ = 3.0 V ION = 8 mA V+ = 3.3 V ION = 8 mA + 85 °C 20 20 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 2 VD - Analog Voltage (V) RON vs. VD and Single Supply Voltage + 25 °C 15 10 - 40 °C 5 + 85 °C 15 + 25 °C 10 - 40 °C 5 0 0 0.5 1 1.5 2 2.5 0 0.0 3 0.5 1.0 VD - Analog Voltage (V) 2.5 3.0 3.5 4.0 25 V+ = 4.3 V ION = 8 mA V+ = 3.6 V ION = 8 mA 20 + 85 °C 15 + 25 °C 10 - 40 °C RON - On-Resistance (Ω) 20 + 85 °C 15 + 25 °C 10 - 40 °C 5 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 4 2.0 RON vs. Analog Voltage and Temperature 25 0 0.0 1.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON - On-Resistance (Ω) 1.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 000 10 mA V+ = 4.3 V 1 mA V+ = 3.6 V 1000 Leakage Current (pA) I+ - Supply Current (A) V+ = 4.3 V 100 µA 10 µA V+ = 3.0 V 1 µA V+ = 3.3 V V+ = 2.6 V 100 nA 100 ID±(ON) 10 10 nA ID±(OFF) ID±(OFF) 1 1 nA 100 pA 10 100 1K 10 K 100 K 1M 0.1 - 60 - 40 - 20 10 M 0 20 40 60 80 100 120 140 Temperature (°C) Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Leakage Current vs. Temperature 1.20 0 1.15 -1 1.10 VT - Switching Threshold (V) 1.05 -2 1.00 VIH 0.95 -3 Gain (dB) 0.90 VIL 0.85 0.80 -4 -5 0.75 0.70 -6 0.65 0.60 -7 0.55 0.50 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 -8 4.5 1 10 100 V+ - Supply Voltage (V) 0 0 - 10 - 10 - 20 - 20 - 30 - 30 - 40 - 50 - 60 - 40 - 50 - 60 - 70 - 70 - 80 - 80 - 90 - 90 1 10 100 Frequency (MHz) Off-Isolation, V+ = 3.3 V Document Number: 68379 S-82507-Rev. B, 13-Oct-08 10 000 Gain vs. Frequency, V+ = 3.3 V Crosstalk (dB) Off Isolation (dB) Switching Threshold vs. Supply Voltage - 100 1000 Frequency (MHz) 1000 - 100 1 10 100 1000 Frequency (MHz) Crosstalk, V+ = 3.3 V www.vishay.com 5 DG2722 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input HSD1± or HSD2± Switch Input V+ VINL Switch Output D± tr < 5 ns tf < 5 ns 50 % VOUT 0.9 x V OUT Logic Input Switch Output OE CL 35 pF RL 50 Ω S GND 0V tON tOFF 0V Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT = D± (R L RL + R ON ) Figure 1. Switching Time V+ Logic Input V+ VHSD1± VHSD2± D± HSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± RL 50 Ω OE CL 35 pF HSD1± = HSD2± 90 % VO GND S Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen VOUT V+ HSD1± or HSD2± D± VOUT VOUT + IN OE Vgen CL = 1 nF VIN = 0 - V+ GND On On Off S Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 68379 S-82507-Rev. B, 13-Oct-08 DG2722 Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± OE D± 0 V, 2.4 V Meter D± OE 0 V, 2.4 V RL GND HSD1± or HSD2± S S HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68379. Document Number: 68379 S-82507-Rev. B, 13-Oct-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1