Vishay DG2722DN-T1-E4 2 port, usb 2.0 high speed (480 mbps) switch, dpdt analog switch Datasheet

DG2722
Vishay Siliconix
2 Port, USB 2.0 High Speed (480 Mbps) Switch,
DPDT Analog Switch
DESCRIPTION
FEATURES
The DG2722 is 2 port high speed analog switch optimized for
USB 2.0 signal switching. The DG2722 switch is configured
in DPDT. It handles bidirectional signal flow, achieving a
900 MHz - 3 dB bandwidth, and a port to port crosstalk and
isolation at - 49 dB.
Processed with high density sub micron CMOS, the DG2722
provide low parasitic capacitance. Signals are routed with
minimized phase distortion and attain a bit to bit skew is as
low as 40 pS.
The DG2722 is designed for a wide range of operating
voltages, from 2.7 V to 4.3 V that can be driven directly from
one cell Li-ion battery. On-chip circuitry protects against
conditions when either the D+/D- lines are shorted to the
VBUS at the USB port. Additionally, logic control pins (S and
OE) can tolerate the presence of voltages that are above the
supply power rail (V+). The control logic threshold is
guaranteed to be (VIH = 1.3 V/min). Latch up current is
300 mA, as per JESD78, and its ESD tolerance exceeds
8 kV.
Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x
0.55 mm), it is ideal for portable high speed mix signal
switching application.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
lead (Pb)-free device termination. The miniQFN-10 package
has a nickel-palladium-gold device termination and is
represented by the lead (Pb)-free "-E4" suffix to the ordering
part number. The nickel-palladium-gold device terminations
meet all JEDEC standards for reflow and MSL rating.
As a further sign of Vishay Siliconix's commitment, the
DG2722 is fully RoHS complaint.
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Wide operation voltage range
Low on-resistance, 7 Ω (typical at 3 V)
Low capacitance, 5.6 pF (typical)
RoHS
COMPLIANT
3 dB high bandwidth: 900 MHz (typical)
Low bit to bit skew: 40 pS (typical)
Low power consumption
Low logic threshold: V
Power down protection: D+/D- pins can tolerate up to
5 V when V+ = 0 V
Logic (S and OE) above V+ tolerance
8 kV ESD protection (HBM)
Latch-up current 300 mA per JESD78
Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm
x 0.55 mm)
APPLICATIONS
• Cellular phones
•
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Portable media players
PDA
Digital camera
GPS
Notebook computer
• TV, monitor, and set top box
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
8
V+
9
S
10
HSD1-
7
6
Control
OE
HSD1+
miniQFN-10L
5
HSD2+
4
HSD2-
3
GND
Rx
1
Top View
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
D-
D+
Pin 1: LONG LEAD
2
Pin 1
Device marking: Rx for DG2722
x = Date/Lot Traceability Code
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1
DG2722
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 85 °C
miniQFN-10
DG2722DN-T1-E4
TRUTH TABLE
PIN DESCRIPTIONS
OE (Pin 8)
S (Pin 10)
Function
Pin Name
Description
0
0
D+ = HSD1+ and D- = HSD1-
OE
Bus Switch Enable
0
1
D+ = HSD2+ and D- = HSD2-
S
Select Input
1
X
Disconnect
HSD1±, HSD2±, D±
Data Port
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
V+
Reference to GND
S, OE, D±, HSD1±, HSD2±a
Current (Any Terminal except S, OE, D±, HSD1±, HSD2±)
Continuous Current (S, OE, D±, HSD1±, HSD2±)
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature (D Suffix)
Limit
- 0.3 to 5.0
- 0.3 to (V+ + 0.3)
30
± 250
± 500
- 65 to 150
208
8
300
Unit
V
mA
°C
mW
Power Dissipation (Packages)b
miniQFN-10c
ESD (Human Body Model) I/O to GND
kV
Latch-up (Current Injection)
mA
Notes:
a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
SPECIFICATIONS V+ = 3.0 V
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
VANALOG
RDS(on)
Limits
- 40 °C to 85 °C
Temp.a Min.b
Typ.c Max.b
Unit
Analog Switch
Analog Signal Ranged
Full
0
Room
V+
7
RDS(on)
V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V
ΔRON
V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.4 V
Room
0.8
RON Flatness
V+ = 3.0 V, ID± = 8 mA, VHSD1/2± = 0.0 V, 1.0 V
Room
2.0
Switch Off Leakage Current
I(off)
V+ = 4.3 V, VHSD1/2± = 0.3 V, 3.0 V,
VD± = 3.0 V, 0.3 V
Full
- 100
100
Channel On Leakage Current
I(on)
V+ = 4.3 V, VHSD1/2± = 0.3 V, 4.0 V,
VD± = 4.0 V, 0.3 V
Full
- 200
200
V+ = 3.0 V to 3.6 V
Full
1.3
V+ = 4.3 V
Full
1.5
V+ = 3.0 V to 4.3 V
Full
On-Resistance
On-Resistance
Matchd
On-Resistance Resistance
Flatnessd
Full
V
8
9
Ω
nA
Digital Control
Input Voltage High
VINH
Input Voltage Low
VINL
Input Capacitance
CIN
Input Current
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2
IINL or IINH
Full
VIN = 0 or V+
Full
V
0.5
5.6
-1
pF
1
µA
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
DG2722
Vishay Siliconix
SPECIFICATIONS V+ = 3.0 V
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Typ.c
Max.b
Unit
30
ns
Dynamic Characteristics
Break-Before-Make Timee, d
Room
tBBM
Enable Turn-On Timee, d
tON(EN)
Enable Turn-Off Timee, d
tOFF(EN)
5
Full
V+ = 3.0 V, VD1/2 ± = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
Full
Room
25
Full
Charge Injectiond
QINJ
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
0.5
Off-Isolationd
OIRR
- 30
Crosstalkd
XTALK
V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF,
f = 240 MHz
- 45
BW
V+ = 3.0 V to 3.6 V, RL = 50 Ω, - 3 dB
900
Bandwidthd
Channel-Off Capacitanced
Channel-On Capacitance
d
Channel-to-Channel Skewd
Skew Off Opposite Transitions of
the Same Outputd
Total Jitterd
CD1± (off)
1.3
CD2± (off)
1.3
CD± (off)
V+ = 3.3 V, f = 1 MHz
Room
dB
MHz
pF
2.7
CD± (on)
6.5
tSK(O)
50
tSK(p)
pC
V+ = 3.0 V to 3.6 V, RL = 50 Ω, CL = 5 pF
ps
20
tJ
200
Power Supply
Power Supply Range
V+
Power Supply Current
I+
2.6
VIN = 0 V, or V+
Full
4.3
V
2
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. VIN = input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
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DG2722
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
30
28
26
V+ = 2.6 V
24
V+ = 3.0 V
V+ = 2.6 V
ION = 8 mA
25
22
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
T = 25 °C
IS = 8 mA
D1±
V+ = 3.3 V
20
V+ = 3.6 V
18
V+ = 4.3 V
16
14
12
10
8
+ 85 °C
20
+ 25 °C
15
10
- 40 °C
5
6
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
0
0.5
1
VD - Analog Voltage (V)
2.5
3
RON vs. Analog Voltage and Temperature
25
25
V+ = 3.0 V
ION = 8 mA
V+ = 3.3 V
ION = 8 mA
+ 85 °C
20
20
RON - On-Resistance (Ω)
RON - On-Resistance (Ω)
2
VD - Analog Voltage (V)
RON vs. VD and Single Supply Voltage
+ 25 °C
15
10
- 40 °C
5
+ 85 °C
15
+ 25 °C
10
- 40 °C
5
0
0
0.5
1
1.5
2
2.5
0
0.0
3
0.5
1.0
VD - Analog Voltage (V)
2.5
3.0
3.5
4.0
25
V+ = 4.3 V
ION = 8 mA
V+ = 3.6 V
ION = 8 mA
20
+ 85 °C
15
+ 25 °C
10
- 40 °C
RON - On-Resistance (Ω)
20
+ 85 °C
15
+ 25 °C
10
- 40 °C
5
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
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2.0
RON vs. Analog Voltage and Temperature
25
0
0.0
1.5
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON - On-Resistance (Ω)
1.5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VD - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
DG2722
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10 000
10 mA
V+ = 4.3 V
1 mA
V+ = 3.6 V
1000
Leakage Current (pA)
I+ - Supply Current (A)
V+ = 4.3 V
100 µA
10 µA
V+ = 3.0 V
1 µA
V+ = 3.3 V
V+ = 2.6 V
100 nA
100
ID±(ON)
10
10 nA
ID±(OFF)
ID±(OFF)
1
1 nA
100 pA
10
100
1K
10 K
100 K
1M
0.1
- 60 - 40 - 20
10 M
0
20
40
60
80
100 120 140
Temperature (°C)
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
Leakage Current vs. Temperature
1.20
0
1.15
-1
1.10
VT - Switching Threshold (V)
1.05
-2
1.00
VIH
0.95
-3
Gain (dB)
0.90
VIL
0.85
0.80
-4
-5
0.75
0.70
-6
0.65
0.60
-7
0.55
0.50
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
4.3
-8
4.5
1
10
100
V+ - Supply Voltage (V)
0
0
- 10
- 10
- 20
- 20
- 30
- 30
- 40
- 50
- 60
- 40
- 50
- 60
- 70
- 70
- 80
- 80
- 90
- 90
1
10
100
Frequency (MHz)
Off-Isolation, V+ = 3.3 V
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
10 000
Gain vs. Frequency, V+ = 3.3 V
Crosstalk (dB)
Off Isolation (dB)
Switching Threshold vs. Supply Voltage
- 100
1000
Frequency (MHz)
1000
- 100
1
10
100
1000
Frequency (MHz)
Crosstalk, V+ = 3.3 V
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DG2722
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
HSD1±
or HSD2±
Switch
Input
V+
VINL
Switch Output
D±
tr < 5 ns
tf < 5 ns
50 %
VOUT
0.9 x V OUT
Logic
Input
Switch
Output
OE
CL
35 pF
RL
50 Ω
S
GND
0V
tON
tOFF
0V
Logic "1" = Switch on
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = D±
(R L
RL
+ R
ON
)
Figure 1. Switching Time
V+
Logic
Input
V+
VHSD1±
VHSD2±
D±
HSD1±
VINH
tr < 5 ns
tf < 5 ns
VINL
VO
HSD2±
RL
50 Ω
OE
CL
35 pF
HSD1± = HSD2±
90 %
VO
GND
S
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
Rgen
VOUT
V+
HSD1±
or HSD2±
D±
VOUT
VOUT
+
IN
OE
Vgen
CL = 1 nF
VIN = 0 - V+
GND
On
On
Off
S
Q=
OUT
x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
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Document Number: 68379
S-82507-Rev. B, 13-Oct-08
DG2722
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
HSD1± or HSD2±
OE
D±
0 V, 2.4 V
Meter
D±
OE
0 V, 2.4 V
RL
GND
HSD1±
or HSD2±
S
S
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
Analyzer
VD±
Off Isolation = 20 log V
HSD2± or HSD1±
Figure 4. Off-Isolation
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68379.
Document Number: 68379
S-82507-Rev. B, 13-Oct-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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