MURT30005 thru MURT30020R
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF(AV) = 300 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
MURT30005(R)
MURT30010(R)
MURT30020(R)
Unit
VRRM
50
100
200
V
RMS reverse voltage
VRMS
35
71
141
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Parameter
Symbol
Repetitive peak reverse voltage
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURT30005(R)
MURT30010(R)
MURT30020(R)
Unit
IF(AV)
TC = 125 °C
300
300
300
A
IFSM
tp = 8.3 ms, half sine
2750
2750
2750
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 150 A, Tj = 25 °C
1.0
1.0
1.0
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
25
25
25
μA
Tj = 125 °C
2
2
2
mA
Maximum reverse recovery
time (per leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
100
100
100
nS
0.40
0.40
0.40
°C/W
Parameter
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MURT30005 thru MURT30020R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
2
MURT30005 thru MURT30020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3