LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P ƽ We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION Device SOT-89 Marking Shipping L2SB882Q 82Q 2500/Tape&Reel L2SB882P 82P 2500/Tape&Reel 2,4 COLLECTOR 1 BASE MAXIMUM RATINGS(Ta=25qC) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Peak Pulse Current ICM 3 A Collector power dissipation PC 0.5 W Parameter Junction temperature Tj 150 °C Storage temperature Tstg −55 to 150 °C 3 EMITTER ELECTRICAL CHARACTERISTICS(Ta=25qC) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 40 − − V IC= 100 µA Conditions Collector-emitter breakdown voltage BVCEO 30 − − V IC= 10mA Emitter-base breakdown voltage BVEBO 6 − − V IE= 100µA Collector cutoff current ICBO − − 1 µA VCB= 40V Collector cutoff current ICEO − − 10 µA VCB= 30V IEBO − − 1 µA VEB= 6V Collector-emitter saturation voltage VCE(sat) − − 0.5 V IC/IB= 2A/ 0.2A Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB= 2A/ 0.2A DC current transfer ratio hFE(1) 100 − 320 − VCE= 2V, IC= 1A DC current transfer ratio hFE 32 − − − VCE= 2V, IC= 100mA fT 50 − − MHz Emitter cutoff current Transition frequency VCE= 5V, I E=0.1A, f =10MHz hFE(1) values are classified as follows : Item(*) hFE Q 100~200 P 160~320 Rev.O 1/2 LESHAN RADIO COMPANY, LTD. L2SB882Q L2SB882P SOT-89 Unit: mm 0 20 0. R D1 C SOT89-3L E H L B B1 8° e (4X ) A Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e — — 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D 1.7 2.7 0.4 1.9 1.3 0.9 3.0 Rev.O 2/2