GSI GS880Z18T-11 8mb pipelined and flow through synchronous nbt sram Datasheet

Preliminary
GS880Z18/36T-11/100/80/66
100-Pin TQFP
Commercial Temp
Industrial Temp
MHz
8Mb Pipelined and Flow Through 100 MHz–66
3.3 V VDD
Synchronous NBT SRAMs 2.5 V and 3.3 V VDDQ
Features
• 512K x 18 and 256K x 36 configurations
• User configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• Pin compatible with 2M, 4M and 16M (future) devices
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
-11
-100
-80
-66
Pipeline
3-1-1-1
tCycle
tKQ
IDD
10 ns
4.5 ns
210 mA
10 ns
4.5 ns
210 mA
12.5 ns
4.8 ns
190 mA
15 ns
5 ns
170 mA
Flow Through
2-1-1-1
tKQ
tCycle
IDD
11 ns
15 ns
150 mA
12 ns
15 ns
150 mA
14 ns
15 ns
130 mA
18 ns
20 ns
130 mA
Functional Description
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS880Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, in addition to the rising-edge-triggered
registers that capture input signals, the device incorporates a
rising-edge-triggered output register. For read cycles, pipelined
SRAM output data is temporarily stored by the edge triggered
output register during the access cycle and then released to the
output drivers at the next rising edge of clock.
The GS880Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDECstandard 100-pin TQFP package.
The GS880Z18/36T is an 8Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles
Clock
Address
A
B
C
D
E
F
Read/Write
R
W
R
W
R
W
Flow Through
Data I/O
Pipelined
Data I/O
Rev: 1.10 8/2000
QA
DB
QC
DD
QE
QA
DB
QC
DD
1/25
QE
© 1998, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
A6
A7
E1
E2
NC
NC
BB
BA
E3
VDD
VSS
CK
W
CKE
G
ADV
NC
A17
A8
A9
GS880Z18T Pinout
NC
NC
NC
VDDQ
A18
NC
NC
VDDQ
VSS
NC
DQA9
DQA8
DQA7
VSS
VDDQ
DQA6
DQA5
VSS
NC
VDD
ZZ
DQA4
DQA3
VDDQ
VSS
DQA2
DQA1
NC
NC
VSS
VDDQ
NC
NC
NC
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
VSS
NC
NC
DQB1
DQB2
VSS
VDDQ
DQB3
DQB4
FT
VDD
VDD
VSS
DQB5
DQB6
VDDQ
VSS
DQB7
DQB8
DQB9
NC
VSS
VDDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
512K x 18
10
71
11
Top View
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 1.10 8/2000
2/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
A6
A7
E1
E2
BD
BC
BB
BA
E3
VDD
VSS
CK
W
CKE
G
ADV
NC
A17
A8
A9
GS880Z36T Pinout
DQC9
DQC8
DQC7
VDDQ
DQB9
DQB8
DQB7
VDDQ
VSS
DQB6
DQB5
DQB4
DQB3
VSS
VDDQ
DQB2
DQB1
VSS
NC
VDD
ZZ
DQA1
DQA2
VDDQ
VSS
DQA3
DQA4
DQA5
DQA6
VSS
VDDQ
DQA7
DQA8
DQA9
LBO
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
VSS
DQC6
DQC5
DQC4
DQC3
VSS
VDDQ
DQC2
DQC1
FT
VDD
VDD
VSS
DQD1
DQD2
VDDQ
VSS
DQD3
DQD4
DQD5
DQD6
VSS
VDDQ
DQD7
DQD8
DQD9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
256K x 36
10
71
11
Top View
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Rev: 1.10 8/2000
3/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
100 Pin TQFP Pin Descriptions
Pin Location
Symbol
Type
Description
37, 36
A0, A1
In
Burst Address Inputs; preload the burst counter
35, 34, 33, 32, 100, 99, 83, 82,
81, 50, 49, 48, 47, 46, 45, 44
A2–A17
In
Address Inputs
80
A18
In
Address Input (x18 Version Only)
89
CK
In
Clock Input Signal
93
BA
In
Byte Write signal for data inputs DQA1-DQA9; active low
94
BB
In
Byte Write signal for data inputs DQB1-DQB9; active low
95
BC
In
Byte Write signal for data inputs DQC1-DQC9; active low (x32/x36 Versions Only)
96
BD
In
Byte Write signal for data inputs DQD1-DQD9; active low (x32/x36 Versions Only)
88
W
In
Write Enable; active low
98
E1
In
Chip Enable; active low
97
E2
In
Chip Enable; active high; for self decoded depth expansion
92
E3
In
Chip Enable; active low, for self decoded depth expansion
86
G
In
Output Enable; active low
85
ADV
In
Advance / Load—Burst address counter control pin
87
CKE
In
Clock Input Buffer Enable; active low
58, 59, 62,63, 68, 69, 72, 73, 74
DQA1–DQA9
I/O
Byte A Data Input and Output pins (x18 Version Only)
8, 9, 12, 13, 18, 19, 22, 23, 24
DQB1–DQB9
I/O
Byte B Data Input and Output pins (x18 Version Only)
51, 52, 53, 56, 57, 75, 78, 79,
1, 2, 3, 6, 7, 25, 28, 29, 30, 95,
96
NC
-
No Connect (x18 Version Only)
51, 52, 53, 56, 57, 58, 59, 62,63
DQA1–DQA9
I/O
Byte A Data Input and Output pins (x36 Versions Only)
68, 69, 72, 73, 74, 75, 78, 79, 80
DQB1–DQB9
I/O
Byte B Data Input and Output pins (x36 Versions Only)
1, 2, 3, 6, 7, 8, 9, 12, 13
DQC1–DQC9
I/O
Byte C Data Input and Output pins (x36 Versions Only)
18, 19, 22, 23, 24, 25, 28, 29, 30 DQD1–DQD9
I/O
Byte D Data Input and Output pins (x36 Versions Only)
64
ZZ
In
Power down control; active high
14
FT
In
Pipeline/Flow Through Mode Control; active low
31
LBO
In
Linear Burst Order; active low
15, 16, 41, 65, 91
VDD
In
3.3 V power supply
5,10, 17, 21, 26, 40, 55, 60, 67,
71, 76, 90
VSS
In
Ground
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
In
3.3 V output power supply for noise reduction
38, 39, 42, 43, 66, 84
NC
-
No Connect
Rev: 1.10 8/2000
4/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Register 1
Register 2
K
Write Data
Write Data
K
D
Q
K
FT
DQa–DQn
GS880Z18/36 NBT SRAM Functional Block Diagram
Memory
Array
Sense Amps
Register 2
Register 1
Read, Write and
Data Coherency
Control Logic
BC
BD
5/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
G
CKE
CK
E3
E2
E1
BA
W
LBO
ADV
A0–A17
K
K
BB
Match
K
FT
Write Address
Write Address
K
K
D
Q
SA1
SA0
Burst
Counter
SA1’
SA0’
Write Drivers
Rev: 1.10 8/2000
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Functional Details
Clocking
Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to
suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation.
Pipelined Mode Read and Write Operations
All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle
read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device
activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable
inputs will deactivate the device.
Function
W
BA
BB
BC
BD
Read
H
X
X
X
X
Write Byte “a”
L
L
H
H
H
Write Byte “b”
L
H
L
H
H
Write Byte “c”
L
H
H
L
H
Write Byte “d”
L
H
H
H
L
Write all Bytes
L
L
L
L
L
Write Abort/NOP
L
H
H
H
H
Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three
chip enables (E1, E2, and E3) are active, the write enable input signal W is deasserted high, and ADV is asserted low. The address
presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control
logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At
the next rising edge of clock the read data is allowed to propagate through the output register and onto the Output pins.
Write operation occurs when the RAM is selected, CKE is active and the write input is sampled low at the rising edge of clock. The
Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write cycle
with no Byte Write inputs active is a no-op cycle. The Pipelined NBT SRAM provides double late write functionality, matching the
write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising
edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the
third rising edge of clock.
Flow through Mode Read and Write Operations
Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a read cycle and the use
of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new
address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow
Through mode the read pipeline is one cycle shorter than in Pipeline mode.
Write operations are initiated in the same way as well, but differ in that the write pipeline is one cycle shorter as well, preserving
the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a
double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode,
address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising
edge of clock.
Rev: 1.10 8/2000
6/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Synchronous Truth Table
Operation
Type Address E1 E2 E3 ZZ ADV W Bx G CKE CK
DQ
Notes
Deselect Cycle, Power Down
D
None
H
X
X
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Power Down
D
None
X
X
H
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Power Down
D
None
X
L
X
L
L
X
X
X
L
L-H
High-Z
Deselect Cycle, Continue
D
None
X
X
X
L
H
X
X
X
L
L-H
High-Z
Read Cycle, Begin Burst
R
External
L
H
L
L
L
H
X
L
L
L-H
Q
Read Cycle, Continue Burst
B
Next
X
X
X
L
H
X
X
L
L
L-H
Q
1,10
NOP/Read, Begin Burst
R
External
L
H
L
L
L
H
X
H
L
L-H
High-Z
2
Dummy Read, Continue Burst
B
Next
X
X
X
L
H
X
X
H
L
L-H
High-Z
1,2,10
Write Cycle, Begin Burst
W
External
L
H
L
L
L
L
L
X
L
L-H
D
3
Write Cycle, Continue Burst
B
Next
X
X
X
L
H
X
L
X
L
L-H
D
1,3,10
NOP/Write Abort, Begin Burst
W
None
L
H
L
L
L
L
H
X
L
L-H
High-Z
2,3
Write Abort, Continue Burst
B
Next
X
X
X
L
H
X
H
X
L
L-H
High-Z 1,2,3,10
Current
X
X
X
L
X
X
X
X
H
L-H
-
None
X
X
X
H
X
X
X
X
X
X
High-Z
Clock Edge Ignore, Stall
Sleep Mode
1
4
Notes:
1. Continue Burst cycles, whether read or write, use the same control inputs; a Deselect continue cycle can only be entered into if a Deselect
cycle is executed first
2. Dummy read and write abort can be considered NOPs because the SRAM performs no operation. A write abort occurs when the W pin is
sampled low, but no byte write pins are active, so no write operation is performed.
3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write
cycles.
4. If CKE high occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE high occurs during a write cycle, the bus will
remain in High Z.
5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals
are low
6. All inputs, except G and ZZ, must meet setup and hold times of rising clock edge.
7. Wait states can be inserted by setting CKE high.
8. This device contains circuitry that ensures all outputs are in High Z during power-up.
9. A 2-bit burst counter is incorporated.
10. The address counter is incriminated for all Burst continue cycles.
Rev: 1.10 8/2000
7/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Pipelined and Flow Through Read-Write Control State Diagram
D
B
Deselect
R
W
D
D
W
New Read
New Write
R
R
W
B
B
R
W
R
Burst Read
W
Burst Write
B
B
D
Key
D
Notes
Input Command Code
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
ƒ Transition
Current State (n)
2. W, R, B, and D represent input command
codes as indicated in the Synchronous Truth Table.
Next State (n+1)
n
n+1
n+2
n+3
Clock (CK)
Command
ƒ
Current State
ƒ
ƒ
ƒ
Next State
Current State and Next State Definition for Pipelined and Flow Through Read/Write Control State Diagram
Rev: 1.10 8/2000
8/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Pipeline Mode Data I/O State Diagram
Intermediate
B W
R B
Intermediate
R
High Z
(Data In)
D
Data Out
(Q Valid)
W
D
Intermediate
Intermediate
W
Intermediate
R
High Z
B
D
Intermediate
Key
Notes
Input Command Code
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
ƒ Transition
Current State (n)
Transition
Intermediate State (N+1)
n
Next State (n+2)
n+1
2. W, R, B, and D represent input command
codes as indicated in the Truth Tables.
n+2
n+3
Clock (CK)
Command
ƒ
ƒ
ƒ
Current State
Intermediate
State
Next State
ƒ
Current State and Next State Definition for Pipeline Mode Data I/O State Diagram
Rev: 1.10 8/2000
9/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Flow Through Mode Data I/O State Diagram
B W
R B
R
High Z
(Data In)
W
Data Out
(Q Valid)
D
D
W
R
High Z
B
D
Key
Notes
Input Command Code
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
ƒ Transition
Current State (n)
2. W, R, B, and D represent input command
codes as indicated in the Truth Tables.
Next State (n+1)
n
n+1
n+2
n+3
Clock (CK)
Command
ƒ
Current State
ƒ
ƒ
ƒ
Next State
Current State and Next State Definition for: Pipelined and Flow Through Read Write Control State Diagram
Rev: 1.10 8/2000
10/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
Read to Write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, interleaved burst sequence is selected. See the tables
below for details.
Mode Pin Functions
Mode Name
Pin Name
Burst Order Control
LBO
Output Register Control
FT
Power Down Control
ZZ
State
Function
L
Linear Burst
H or NC
Interleaved Burst
L
Flow Through
H or NC
Pipeline
L or NC
Active
H
Standby, IDD = ISB
Note:
There are pull-up devices on the LBO and FT pins and a pull down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above table.
Burst Counter Sequences
Interleaved Burst Sequence
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
1st address
00
01
10
11
2nd address
01
10
11
00
2nd address
01
00
11
10
3rd address
10
11
00
01
3rd address
10
11
00
01
4th address
11
00
01
10
4th address
11
10
01
00
Note: The burst counter wraps to initial state on the 5th clock.
Note: The burst counter wraps to initial state on the 5th clock.
BPR 1999.05.18
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull-down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after 2 cycles of wake up time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
Rev: 1.10 8/2000
11/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Sleep Mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
~
~ ~
~
Sleep Mode Timing Diagram
CK
ZZ
tZZR
Sleep
tZZS
tZZH
Designing for Compatibility
The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found
on Pin 14. Not all vendors offer this option, however, most mark Pin 14 as VDD or VDDQ on pipelined parts and VSS on flow
through parts. GSI NBT SRAMs are fully compatible with these sockets.
Pin 66, a No Connect (NC) on GSI’s GS880Z18/36 NBT SRAM, the Parity Error open drain output on GSI’s GS881Z18/36 NBT
SRAM, is often marked as a power pin on other vendor’s NBT-compatible SRAMs. Specifically, it is marked VDD or VDDQ on
pipelined parts and VSS on flow through parts. Users of GSI NBT devices who are not actually using the ByteSafe™ parity feature
may want to design the board site for the RAM with Pin 66 tied high through a 1k ohm resistor in Pipeline mode applications or
tied low in Flow Through mode applications in order to keep the option to use non-configurable devices open. By using the pull-up
resistor, rather than tying the pin to one of the power rails, users interested in upgrading to GSI’s ByteSafe NBT SRAMs
(GS881Z18/36), featuring Parity Error detection and JTAG Boundary Scan, will be ready for connection to the active low, open
drain Parity Error output driver at Pin 66 on GSI’s TQFP ByteSafe RAMs.
Rev: 1.10 8/2000
12/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 4.6
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VCK
Voltage on Clock Input Pin
–0.5 to 6
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 4.6 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDD +0.5 (≤ 4.6 V max.)
V
IIN
Input Current on Any Pin
+/–20
mA
IOUT
Output Current on Any I/O Pin
+/–20
mA
PD
Package Power Dissipation
1.5
W
TSTG
Storage Temperature
–55 to 125
oC
TBIAS
Temperature Under Bias
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Recommended Operating Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
VDD
V
1
Input High Voltage
VIH
1.7
—
VDD +0.3
V
2
Input Low Voltage
VIL
–0.3
—
0.8
V
2
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
3
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
3
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V ≤ VDDQ ≤ 2.375 V
(i.e., 2.5 V I/O) and 3.6 V ≤ VDDQ ≤ 3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
2. This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
4. Input Under/overshoot voltage must be –2 V > Vi < VDD +2 V with a pulse width not to exceed 20% tKC.
Rev: 1.10 8/2000
13/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Undershoot Measurement and Timing
Overshoot Measurement and Timing
VIH
20% tKC
VDD + 2.0 V
VSS
50%
50%
VDD
VSS – 2.0 V
20% tKC
VIL
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
5
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
6
7
pF
Note: These parameters are sample tested.
Package Thermal Characteristics
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
°C/W
1,2
Junction to Ambient (at 200 lfm)
four
RΘJA
24
°C/W
1,2
Junction to Case (TOP)
—
RΘJC
9
°C/W
3
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
Rev: 1.10 8/2000
14/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
AC Test Conditions
Parameter
Conditions
Input high level
2.3 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ
4. Device is deselected as defined by the Truth Table.
Output Load 2
Output Load 1
DQ
2.5 V
50Ω
30pF*
225Ω
DQ
5pF*
VT = 1.25 V
225Ω
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IINZZ
VDD ≥ VIN ≥ VIH
0 V ≤ VIN ≤ VIH
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
IINM
VDD ≥ VIN ≥ VIL
0 V ≤ VIN ≤ VIL
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –8 mA, VDDQ = 2.375 V
1.7 V
—
Output High Voltage
VOH
IOH = –8 mA, VDDQ = 3.135 V
2.4 V
—
Output Low Voltage
VOL
IOL = 8 mA
—
0.4 V
Rev: 1.10 8/2000
15/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Operating Currents
-11
Parameter
Test Conditions
Symbol
Operating
Current
Device Selected;
All other inputs
≥ VIH or ≤ VIL
Output open
Standby
Current
ZZ ≥ VDD - 0.2V
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
Rev: 1.10 8/2000
-100
-80
-66
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
0 to
70°C
-40 to
+85°C
Unit
IDD
Pipeline
210
220
210
220
190
200
170
180
mA
IDD
Flow-through
150
160
150
160
130
140
130
140
mA
ISB
Pipeline
30
40
30
40
30
40
30
40
mA
ISB
Flow-through
30
40
30
40
30
40
30
40
mA
IDD
Pipeline
80
90
80
90
70
80
65
75
mA
IDD
Flow-through
65
75
65
75
55
65
55
65
mA
16/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
AC Electrical Characteristics
Parameter
Clock Cycle Time
Pipeline
Flowthrough
Symbol
tKC
-11
-100
-80
-66
Unit
Min
Max
Min
Max
Min
Max
Min
Max
10
—
10
—
12.5
—
15
—
ns
Clock to Output Valid
tKQ
—
4.5
—
4.5
—
4.8
—
5
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ1
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock Cycle Time
tKC
15.0
—
15.0
—
15.0
—
20
—
ns
Clock to Output Valid
tKQ
—
11.0
—
12.0
—
14.0
—
18.0
ns
Clock to Output Invalid
tKQX
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock to Output in Low-Z
tLZ1
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
tKH
2
—
2
—
2
—
2.3
—
ns
Clock LOW Time
tKL
2.2
—
2.2
—
2.2
—
2..5
—
ns
Clock to Output in High-Z
tHZ1
1.5
4.5
1.5
4.5
1.5
4.8
1.5
5
ns
G to Output Valid
tOE
—
4.5
—
4.5
—
4.8
—
5
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
4.5
—
4.5
—
4.8
—
5
ns
Setup time
tS
2.0
—
2.0
—
—
2.0
—
2.0
ns
Hold time
tH
0.5
—
0.5
—
—
0.5
—
0.5
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
ns
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup
and hold times as specified above.
Rev: 1.10 8/2000
17/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Pipeline Mode Read/Write Cycle Timing
1
2
3
4
5
6
7
8
9
A5
A6
A7
10
CK
tS tH
tKH tKL
tKC
CKE
tS tH
E*
tS tH
ADV
tS tH
W
tS tH
Bn
tS tH
A0–An
A1
A2
A3
A4
tKQ
tOE
tKQX
DQA–DQD
D(A1)
tS
tLZ
D
(A2+1)
D(A2)
tH
Q(A3)
Q(A4)
tHZ
Q
(A4+1)
D(A5)
Q(A6)
tKQX
tOHZ
tOLZ
G
COMMAND
Write
D(A1)
Write
D(A2)
BURST Read
Write
Q(A3)
D(A2+1)
Read
Q(A4)
BURST
Read
Q(A4+1)
Write
D(A5)
DON’T CARE
Read
Q(A6)
Write
D(A7)
DESELECT
UNDEFINED
*Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1
Rev: 1.10 8/2000
18/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Pipeline Mode No-Op, Stall and Deselect Timing
1
2
3
4
5
A3
A4
6
7
8
9
10
CK
tS tH
CKE
tS tH
E*
tS tH
ADV
tS tH
W
Bn
A0–An
A1
A2
A5
tHZ
Q(A2)
D(A1)
DQ
Q(A3)
D(A4)
Q(A5)
tKQX
COMMAND
Write
D(A1)
Read
Q(A2)
STALL
Read
Q(A3)
Write
D(A4)
STALL
NOP
DON’T CARE
Read
Q(A5)
DESELECT CONTINUE
DESELECT
UNDEFINED
*Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1
Rev: 1.10 8/2000
19/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Flow Through Mode Read/Write Cycle Timing
1
4
3
2
5
6
7
8
9
A5
A6
A7
10
CK
tS tH
tKH tKL
tKC
CKE
tS tH
E*
tS tH
ADV
tS tH
W
tS tH
Bn
tS
A0–An
tH
A1
A2
A3
A4
tHZ
tOE
tKQ
tKQX
tLZ
DQ
D(A1)
tS
D(A2)
D
(A2+1)
Q(A3)
Q
(A4+1)
Q(A4)
Q(A6)
tKQX
tOHZ
tH
D(A5)
tOLZ
G
COMMAND
Write
D(A1)
Write
D(A2)
BURST Read
Write
Q(A3)
D(A2+1)
Read
Q(A4)
BURST
Read
Q(A4+1)
Write
D(A5)
Read
Q(A6)
DON’T CARE
Write
D(A7)
DESELECT
UNDEFINED
*Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1
Rev: 1.10 8/2000
20/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Flow Through Mode No-Op, Stall and Deselect Timing
1
2
3
4
5
A3
A4
6
7
8
10
9
CK
tS tH
CKE
tS tH
E*
tS tH
ADV
W
Bn
A0–An
A1
A2
A5
tHZ
Q(A2)
D(A1)
DQ
Q(A3)
Q(A5)
D(A4)
tKQX
COMMAND
Write
D(A1)
Read
Q(A2)
STALL
Read
Q(A3)
Write
D(A4)
STALL
NOP
DON’T CARE
Read
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
*Note: E = High (False) if E1 = 1 or E2 = 0 or E3 = 1
Rev: 1.10 8/2000
21/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Output Driver Characteristics
120.0
100.0
Pull Down Drivers
80.0
60.0
40.0
20.0
VDDQ
I Out (mA)
I Out
0.0
VOut
-20.0
VS S
-40.0
-60.0
Pull Up Drivers
-80.0
-100.0
-120.0
-140.0
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
V Out (Pull Down)
VDDQ - V Out (Pull Up)
3.6V PD HD
3.3V PD HD
3.1V PD HD
3.1V PU HD
3.3V PU HD
3.6V PU HD
BPR 1999.05.18
Rev: 1.10 8/2000
22/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
TQFP Package Drawing
L
Min. Nom. Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
—
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
—
0.65
—
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
—
1.00
—
Y
Coplanarity
—
—
0.10
θ
Lead Angle
0°
—
7°
L1
c
D
D1
Description
Pin 1
Symbol
θ
e
b
A1
A2
Y
E1
E
Notes:
1. All dimensions are in millimeters (mm).
2. Package width and length do not include mold protrusion.
BPR 1999.05.18
Rev: 1.10 8/2000
23/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
Ordering Information—GSI NBT Synchronous SRAM
Org
Part Number1
Type
Package
Speed2
(MHz/ns)
TA3
512K x 18
GS880Z18T-11
NBT Pipeline/Flow Through
TQFP
100/11
C
512K x 18
GS880Z18T-100
NBT Pipeline/Flow Through
TQFP
100/12
C
512K x 18
GS880Z18T-80
NBT Pipeline/Flow Through
TQFP
80/14
C
512K x 18
GS880Z18T-66
NBT Pipeline/Flow Through
TQFP
66/18
C
256K x 36
GS880Z36T-11
NBT Pipeline/Flow Through
TQFP
100/11
C
256K x 36
GS880Z36T-100
NBT Pipeline/Flow Through
TQFP
100/12
C
256K x 36
GS880Z36T-80
NBT Pipeline/Flow Through
TQFP
80/14
C
256K x 36
GS880Z36T-66
NBT Pipeline/Flow Through
TQFP
66/18
C
512K x 18
GS880Z18T-11I
NBT Pipeline/Flow Through
TQFP
100/11
I
512K x 18
GS880Z18T-100I
NBT Pipeline/Flow Through
TQFP
100/12
I
512K x 18
GS880Z18T-80I
NBT Pipeline/Flow Through
TQFP
80/14
I
512K x 18
GS880Z18T-66I
NBT Pipeline/Flow Through
TQFP
66/18
I
256K x 36
GS880Z36T-11I
NBT Pipeline/Flow Through
TQFP
100/11
I
256K x 36
GS880Z36T-100I
NBT Pipeline/Flow Through
TQFP
100/12
I
256K x 36
GS880Z36T-80I
NBT Pipeline/Flow Through
TQFP
80/14
I
256K x 36
GS880Z36T-66I
NBT Pipeline/Flow Through
TQFP
66/18
I
Status
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS882Z36T-100IT.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some
of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings
Rev: 1.10 8/2000
24/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.
Preliminary.
GS880Z18/36T-11/100/80/66
DS/DateRev. Code: Old;
New
Types of Changes
Page /Revisions/Reason
Format or Content
Format/Typos
GS880Z18/36TRev1.04h 5/
1999;
1.05 9/1999
• Last Page/Fixed “GSGS..” in Ordering Information
Note.Document/Changed format of all E’s from EN to EN.
• Timing Diagrams/Changed format. ex. A0 to A0.
• Flow Through Timing Diagrams/Upper case “T” in Flow
Through. thru to Through.
• Pin outs/Block Diagrams -Updated format to small caps.
• Added Rev History.
Content
• 5/Fixed TQFP pin description table to match pinout/
Enhancement.
• 5/Changed chip enables to match pins./Clarification
• Ordered Address inputs in pin description table to match pin
out.
• Changed Dimension D in Dimension table from 20.1 to 22.1/
Correction.
• Speed Bins on Page 1/Last column-changed 12ns to 15ns
and 15ns to 12ns.
GS880Z18/36T 1.05 9/
1999K/ 1.06 10/1999
Format
• Improved Appearance of Timing Diagrams.
• Minor formatting changes.
GS880Z18/36T 1.06 9/
1999K 1.07 1/2000L
Content
GS880Z18/36T 1.07 1/
2000K 1.08 5/2000M
Content
GS880Z18/36T 1.07 1/
2000K 1.08 5/2000M;
880Z18_r1_09
880Z18_r1_09;
880Z18_r1_10
Rev: 1.10 8/2000
Content
Content/Format
• New GSI Logo.
• Pin 14 removed from ground section on page 4
• Grammar updates
• Timing diagrams updated on pages 18, 19, 20, and 21
• Pin Descriptions table on page 4 updated
• Features on page 1 updated
• Removed 166 MHz and 150 MHz speed bins
• Used 100 MHz Pipeline numbers for 133 MHz
• Changed all 133 MHz references to 11 ns
• Updated format to comply with Technical Publications
standards
• Updated Capitance table—removed Input row and changed
Output to I/O
25/25
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
© 1998, Giga Semiconductor, Inc.