HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET (650V,10A) Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching 1 Features 2 3 1 2 • H10N65 is a High voltage NChannel enhancement mode power MOSFET 3-Lead TO-220FP) Plastic Package Package Code: F Pin 1: Gate Pin 2: Drain 3Pin 3: Source H10N65 Series Symbol D chip fabricated in advanced silicon epitaxial planar technology • Advanced termination scheme to provide enhanced voltageblocking capability • Avalanche Energy Specified • Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; • The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers G S Absolute Maximum Ratings Symbol VDSS Parameter Drain-Source Voltage Value Units 650 V 10 A 6.4 A o ID Continuous Drain Current (VGS@10V, TC=25 C) o Continuous Drain Current (VGS@10V, TC=100 C) *1 IDM Pulsed Drain Current 36 A VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25oC) PD Linear Derating Factor EAS IAR EAR Single Pulse Avalanche Energy*2 TO-220AB 150 TO-220FP 50 TO-220AB 1.25 TO-220FP 0.4 W W/°C 700 mJ 10 A 66 mJ *1 Avalanche Current *1 Repetitive Avalanche Energy TJ Operating Junction Temperature Range -55 to 150 °C Tstg Storage Temperature Range -55 to 150 °C Value Units *1: Repetitive rating; pulse width limited by max. junction temperature *2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A *3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case (Max.) RθJA Thermal Resistance Junction to Ambient (Max.) H10N65 Series TO-220AB 1.3 TO-220FP 5 62 °C/W °C/W HSMC Product Specification HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 2/6 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS Characteristic Test Conditions Min. Typ. Max. Unit 650 - - V Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temp. Coefficient Reference to 25oC, ID=1mA - 0.58 - V/oC IDSS Drain-Source Leakage Current VDS=650V, VGS=0V - - 10 uA IGSSF Gate-Source Forward Leakage Vgsf=30V, VDS=0V - - 100 nA IGSSR Gate-Source Reverse Leakage Vgsr=-30V, VDS=0V - - -100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V *4 - - 1.0 Ω 5 - S - 1430 - - 117 - ΔV(BR)DSS/ΔT J RDS(on) Static Drain-Source On-Resistance VGS=10V, ID=5.0A gFS Forward Transconductance VDS=40V, ID=5.0A Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 2.2 - td(on) Turn-on Delay Time - 47 - - 75 - - 345 - - 67 - - 44 - 10 - 16 Min. Typ. tr td(off) tf Rise Time Turn-off Delay Time VDS=25V, VGS=0V, f=1MHz (VDD=325V, ID=10A, RG=10Ω, RD=32Ω)*4 Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (VDS=525V, ID=10A, VGS=10V) *4 pF ns nC Source-Drain Diode Symbol IS VSD Characteristic Max. Units Continuous Source Current (Body Diode) Page1 MOSFET symbol showing the integral reverse P-N junction diode. - - 10 A Diode Forward Voltage IS=10A, VGS=0V, TJ=25°C*4 - - 1.4 V *4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2% *5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS H10N65 Series HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 3/6 Characteristics Curve Figure 1. On-Region Characteristics Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 5. Capacitance Characteristics H10N65 Series Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs Source Current and Temperature Figure 6. Gate Charge Characteristics HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 4/6 Characteristics Curve Figure 7. Breakdow n Voltage Variation vs. Temperature H10N65 Series Figure 8. Onresistance Variation vs Temperature HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 5/6 TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B E C D H K M I 3 G N 2 O P Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Note: Green label is used for pb-free packing J L Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A α4 α1 E O C D α3 α2 α5 G I J N Pin Style: 1.Gate 2.Drain 3.Source 3 2 F K 1 M L Note: Green label is used for pb-free packing Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 α1/2/4/5 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 o *5 Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 H10N65 Series HSMC Product Specification HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 6/6 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H10N65 Series o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification