HSMC H10N65 N-channel power mosfet (650v,10a) Datasheet

HI-SINCERITY
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 1/6
MICROELECTRONICS CORP.
H10N65 Series
H10N65 Series
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
N-Channel Power MOSFET (650V,10A)
Applications
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
1
Features
2
3
1 2
• H10N65 is a High voltage NChannel enhancement mode power MOSFET
3-Lead TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3Pin 3: Source
H10N65 Series Symbol
D
chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
G
S
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Value
Units
650
V
10
A
6.4
A
o
ID
Continuous Drain Current (VGS@10V, TC=25 C)
o
Continuous Drain Current (VGS@10V, TC=100 C)
*1
IDM
Pulsed Drain Current
36
A
VGS
Gate-to-Source Voltage
±30
V
Total Power Dissipation (TC=25oC)
PD
Linear Derating Factor
EAS
IAR
EAR
Single Pulse Avalanche Energy*2
TO-220AB
150
TO-220FP
50
TO-220AB
1.25
TO-220FP
0.4
W
W/°C
700
mJ
10
A
66
mJ
*1
Avalanche Current
*1
Repetitive Avalanche Energy
TJ
Operating Junction Temperature Range
-55 to 150
°C
Tstg
Storage Temperature Range
-55 to 150
°C
Value
Units
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A
*3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case (Max.)
RθJA
Thermal Resistance Junction to Ambient (Max.)
H10N65 Series
TO-220AB
1.3
TO-220FP
5
62
°C/W
°C/W
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 2/6
MICROELECTRONICS CORP.
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
V(BR)DSS
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temp. Coefficient
Reference to 25oC, ID=1mA
-
0.58
-
V/oC
IDSS
Drain-Source Leakage Current
VDS=650V, VGS=0V
-
-
10
uA
IGSSF
Gate-Source Forward Leakage
Vgsf=30V, VDS=0V
-
-
100
nA
IGSSR
Gate-Source Reverse Leakage
Vgsr=-30V, VDS=0V
-
-
-100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
*4
-
-
1.0
Ω
5
-
S
-
1430
-
-
117
-
ΔV(BR)DSS/ΔT
J
RDS(on)
Static Drain-Source On-Resistance
VGS=10V, ID=5.0A
gFS
Forward Transconductance
VDS=40V, ID=5.0A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
2.2
-
td(on)
Turn-on Delay Time
-
47
-
-
75
-
-
345
-
-
67
-
-
44
-
10
-
16
Min.
Typ.
tr
td(off)
tf
Rise Time
Turn-off Delay Time
VDS=25V, VGS=0V, f=1MHz
(VDD=325V, ID=10A, RG=10Ω,
RD=32Ω)*4
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(VDS=525V, ID=10A, VGS=10V)
*4
pF
ns
nC
Source-Drain Diode
Symbol
IS
VSD
Characteristic
Max. Units
Continuous Source Current
(Body Diode)
Page1 MOSFET symbol showing the
integral reverse P-N junction diode.
-
-
10
A
Diode Forward Voltage
IS=10A, VGS=0V, TJ=25°C*4
-
-
1.4
V
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
*5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS
H10N65 Series
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 3/6
Characteristics Curve
Figure 1. On-Region Characteristics
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
H10N65 Series
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation vs Source Current and Temperature
Figure 6. Gate Charge Characteristics
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 4/6
Characteristics Curve
Figure 7. Breakdow n Voltage Variation
vs. Temperature
H10N65 Series
Figure 8. Onresistance Variation vs Temperature
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 5/6
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
E
C
D
H
K
M
I
3
G
N
2
O
P
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Note: Green label is used for pb-free packing
J
L
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
E O
C
D
α3
α2
α5
G
I
J
N
Pin Style: 1.Gate 2.Drain 3.Source
3
2
F
K
1
M
L
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
α1/2/4/5
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
o
*5
Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H10N65 Series
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 6/6
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H10N65 Series
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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