DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS PINNING • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The 4 SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 source d d handbook, halfpage PIN handbook, halfpage 3 3 4 g2 g2 g1 g1 1 Top view 2 2 s,b MAM124 1 Top view BF909 marking code: M28. s,b MAM125 - 1 BF909R marking code: M29. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage − − 7 V ID drain current − − 40 mA Ptot total power dissipation − − 200 mW Tj operating junction temperature − − 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 − 3.6 4.3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz − 2 2.8 dB 1995 Apr 25 2 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7 V ID drain current − 40 mA IG1 gate 1 current − ±10 mA IG2 gate 2 current − ±10 mA Ptot total power dissipation see Fig.3 BF909 up to Tamb = 50 °C; note 1 − 200 mW BF909R up to Tamb = 40 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board. MLB935 250 handbook, halfpage Ptot (mW) 200 150 BF909R BF909 100 50 0 0 50 100 150 200 Tamb ( oC) Fig.3 Power derating curves. 1995 Apr 25 3 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s PARAMETER CONDITIONS VALUE UNIT BF909 500 K/W BF909R 550 K/W thermal resistance from junction to ambient note 1 thermal resistance from junction to soldering point note 2 BF909 Ts = 92 °C 290 K/W BF909R Ts = 78 °C 360 K/W Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S = VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S = VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S = 4 V; VDS = 5 V; ID = 20 µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S = VDS = 5 V; ID = 20 µA 0.3 1.2 V IDSX drain-source current VG2-S = 4 V; VDS = 5 V; RG1 = 120 kΩ; note 1 12 20 mA IG1-SS gate 1 cut-off current VG1-S = 5 V; VG2-S = VDS = 0 − 50 nA IG2-SS gate 2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA Note 1. RG1 connects gate 1 to VGG = 5 V; see Fig.18. DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj = 25 °C 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 2.3 3 pF Cos drain-source capacitance f = 1 MHz − 2.3 3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure − 2 2.8 dB 1995 Apr 25 f = 800 MHz; GS = GSopt; BS = BSopt 4 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB937 MLB936 30 110 handbook, halfpage handbook, halfpage V G2 S = 4 V 3 V Vunw ID (dBµV) (mA) 2.5 V 2V 100 20 90 10 1.5 V 1V 80 0 10 20 0 30 40 50 gain reduction (dB) 0 0.4 0.8 1.2 1.6 2.0 V G1 S (V) VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ. Fig.4 VDS = 5 V. Tj = 25 °C. Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.18. Fig.5 Transfer characteristics; typical values. MLB938 30 handbook, halfpage I G1 (µA) ID (mA) 1.3 V 20 MLB939 200 handbook, halfpage V G1 S = 1.4 V V G2 S = 4 V 150 3.5 V 1.2 V 3V 100 1.1 V 2.5 V 1.0 V 10 50 0.9 V 2V 0 0 0 2 4 6 8 0 10 V DS (V) VDS = 5 V. VG2-S = 4 V. Tj = 25 °C. 2 V G1 S (V) 3 VDS = 5 V. Tj = 25 °C. Fig.7 Fig.6 Output characteristics; typical values. 1995 Apr 25 1 5 Gate 1 current as a function of gate 1 voltage; typical values. Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB941 MLB940 60 25 handbook, halfpage handbook, halfpage ID (mA) 20 V G2 S = 4 V y fs (mS) 3.5 V 3V 40 15 2.5 V 10 20 5 2V 0 0 0 10 20 I D (mA) 30 0 VDS = 5 V. Tj = 25 °C. Fig.8 20 40 I G1 (µA) 60 VDS = 5 V; VG2-S = 4 V. Tj = 25 °C. Forward transfer admittance as a function of drain current; typical values. Fig.9 Drain current as a function of gate 1 current; typical values. MLB942 16 MLB943 30 handbook, halfpage handbook, halfpage ID (mA) R G1 = 47 kΩ ID (mA) 68 kΩ 82 kΩ 12 100 kΩ 20 120 kΩ 150 kΩ 8 180 kΩ 220 kΩ 10 4 0 0 0 2 4 V GG (V) 6 0 VDS = 5 V; VG2-S = 4 V. RG1 = 120 kΩ (connected to VGG); Tj = 25 °C. 4 6 V GG = V DS (V) 8 VG2-S = 4 V. RG1 connected to VGG; Tj = 25 °C. Fig.10 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.18. 1995 Apr 25 2 Fig.11 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.18. 6 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB944 20 MLB945 40 handbook, halfpage handbook, halfpage ID (mA) 16 V GG = 5 V I G1 (µA) 4.5 V V GG = 5 V 30 4V 4.5 V 3.5 V 12 4V 3V 3.5 V 20 3V 8 10 4 0 0 0 2 4 V G2 S (V) 6 0 VDS = 5 V; Tj = 25 °C. RG1 = 120 kΩ (connected to VGG). 2 4 V G2 S (V) 6 VDS = 5 V; Tj = 25 °C. RG1 = 120 kΩ (connected to VGG). Fig.12 Drain current as a function of gate 2 voltage; typical values; see Fig.18. Fig.13 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.18. MLB946 10 2 handbook, halfpage MLB947 10 3 ϕ rs (deg) y rs (µS) y is (mS) ϕ rs 10 2 10 10 3 10 2 b is y rs 10 1 10 g is 10 1 10 102 f (MHz) 10 VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. Fig.14 Input admittance as a function of frequency; typical values. 1995 Apr 25 1 1 10 3 Fig.15 Reverse transfer admittance and phase as a function of frequency; typical values. 7 Philips Semiconductors Product specification N-channel dual gate MOS-FETs MLB948 10 2 MLB949 10 2 y fs y fs BF909; BF909R 10 handbook, halfpage yos (mS) ϕ fs bos (deg) (mS) 1 ϕfs 10 gos 10 10 1 10 2 10 1 1 10 102 10 3 f (MHz) VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. 102 10 3 VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. Fig.16 Forward transfer admittance and phase as a function of frequency; typical values. Fig.17 Output admittance as a function of frequency; typical values. VAGC R1 10 k Ω C1 4.7 nF R GEN 50 Ω R2 50 Ω C3 R3 10 Ω C2 DUT 4.7 nF C5 2.2 pF R G1 12 pF L1 ≈ 350 nH RL 50 Ω C4 4.7 nF VI VGG VDS Fig.18 Cross-modulation test set-up. 1995 Apr 25 f (MHz) 8 MLD151 Philips Semiconductors Product specification N-channel dual gate MOS-FETs Table 1 f (MHz) BF909; BF909R Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 50 0.985 −6.4 4.064 172.3 0.001 86.9 0.985 −3.2 100 0.978 −12.6 3.997 164.9 0.002 82.7 0.982 −6.4 200 0.957 −25.0 3.886 150.8 0.005 74.3 0.973 −12.6 300 0.931 −36.5 3.682 137.3 0.006 68.9 0.960 −18.6 400 0.899 −47.6 3.484 123.8 0.007 59.6 0.947 −24.2 500 0.868 −57.4 3.260 111.7 0.007 57.9 0.936 −29.6 600 0.848 −66.6 3.053 101.0 0.006 58.5 0.927 −34.8 700 0.816 −74.6 2.829 90.3 0.005 65.5 0.919 −39.8 800 0.792 −82.2 2.652 79.9 0.005 83.3 0.913 −44.6 900 0.772 −89.3 2.470 69.5 0.005 114.9 0.910 −49.5 1000 0.754 −95.6 2.328 59.5 0.006 138.7 0.909 −54.6 Table 2 Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA Γopt f (MHz) Fmin (dB) (ratio) (deg) 800 2.00 0.603 67.71 1995 Apr 25 9 rn 0.581 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R PACKAGE OUTLINES handbook, full pagewidth 3.0 2.8 0.150 0.090 0.75 0.60 B 1.9 4 3 0.1 max o 10 max 0.2 M A B A 2.5 max 1.4 1.2 o 10 max 1 1.1 max o 30 max 2 0 0.1 0.88 0.48 0 0.1 0.1 M A B MBC845 1.7 TOP VIEW Dimensions in mm. Fig.19 SOT143. 3.0 2.8 handbook, full pagewidth 0.150 0.090 0.40 0.25 B 1.9 3 4 0.1 max o 10 max 0.2 M A A 1.4 1.2 o 2.5 max 10 max 2 1.1 max o 30 max 1 0.48 0.38 0.88 0.78 1.7 0.1 M B TOP VIEW Dimensions in mm. Fig.20 SOT143R. 1995 Apr 25 10 MBC844 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 11