PHILIPS BF909 N-channel dual gate mos-fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF909; BF909R
N-channel dual gate MOS-FETs
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
PINNING
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
4
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
d
d
handbook, halfpage
PIN
handbook, halfpage
3
3
4
g2
g2
g1
g1
1
Top view
2
2
s,b
MAM124
1
Top view
BF909 marking code: M28.
s,b
MAM125 - 1
BF909R marking code: M29.
Fig.1 Simplified outline (SOT143) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
7
V
ID
drain current
−
−
40
mA
Ptot
total power dissipation
−
−
200
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
−
3.6
4.3
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
35
50
fF
F
noise figure
f = 800 MHz
−
2
2.8
dB
1995 Apr 25
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7
V
ID
drain current
−
40
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
see Fig.3
BF909
up to Tamb = 50 °C; note 1
−
200
mW
BF909R
up to Tamb = 40 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board.
MLB935
250
handbook, halfpage
Ptot
(mW)
200
150
BF909R
BF909
100
50
0
0
50
100
150
200
Tamb ( oC)
Fig.3 Power derating curves.
1995 Apr 25
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
BF909
500
K/W
BF909R
550
K/W
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
note 2
BF909
Ts = 92 °C
290
K/W
BF909R
Ts = 78 °C
360
K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 5 V;
ID = 20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S = VDS = 5 V; ID = 20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
12
20
mA
IG1-SS
gate 1 cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
−
50
nA
IG2-SS
gate 2 cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
−
50
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
3.6
4.3
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
2.3
3
pF
Cos
drain-source capacitance
f = 1 MHz
−
2.3
3
pF
Crs
reverse transfer capacitance f = 1 MHz
−
35
50
fF
F
noise figure
−
2
2.8
dB
1995 Apr 25
f = 800 MHz; GS = GSopt; BS = BSopt
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB937
MLB936
30
110
handbook, halfpage
handbook, halfpage
V G2 S = 4 V 3 V
Vunw
ID
(dBµV)
(mA)
2.5 V
2V
100
20
90
10
1.5 V
1V
80
0
10
20
0
30
40
50
gain reduction (dB)
0
0.4
0.8
1.2
1.6
2.0
V G1 S (V)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.4
VDS = 5 V.
Tj = 25 °C.
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
Fig.5 Transfer characteristics; typical values.
MLB938
30
handbook, halfpage
I G1
(µA)
ID
(mA)
1.3 V
20
MLB939
200
handbook, halfpage
V G1 S = 1.4 V
V G2 S = 4 V
150
3.5 V
1.2 V
3V
100
1.1 V
2.5 V
1.0 V
10
50
0.9 V
2V
0
0
0
2
4
6
8
0
10
V DS (V)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
2
V G1 S (V)
3
VDS = 5 V.
Tj = 25 °C.
Fig.7
Fig.6 Output characteristics; typical values.
1995 Apr 25
1
5
Gate 1 current as a function of gate 1
voltage; typical values.
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB941
MLB940
60
25
handbook, halfpage
handbook, halfpage
ID
(mA)
20
V G2 S = 4 V
y fs
(mS)
3.5 V
3V
40
15
2.5 V
10
20
5
2V
0
0
0
10
20
I D (mA)
30
0
VDS = 5 V.
Tj = 25 °C.
Fig.8
20
40
I G1 (µA)
60
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Forward transfer admittance as a
function of drain current; typical values.
Fig.9
Drain current as a function of gate 1 current;
typical values.
MLB942
16
MLB943
30
handbook, halfpage
handbook, halfpage
ID
(mA)
R G1 = 47 kΩ
ID
(mA)
68 kΩ
82 kΩ
12
100 kΩ
20
120 kΩ
150 kΩ
8
180 kΩ
220 kΩ
10
4
0
0
0
2
4
V GG (V)
6
0
VDS = 5 V; VG2-S = 4 V.
RG1 = 120 kΩ (connected to VGG); Tj = 25 °C.
4
6
V GG = V DS (V)
8
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.18.
1995 Apr 25
2
Fig.11 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.18.
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
MLB944
20
MLB945
40
handbook, halfpage
handbook, halfpage
ID
(mA)
16
V GG = 5 V
I G1
(µA)
4.5 V
V GG = 5 V
30
4V
4.5 V
3.5 V
12
4V
3V
3.5 V
20
3V
8
10
4
0
0
0
2
4
V G2 S (V)
6
0
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
2
4
V G2 S (V)
6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
Fig.12 Drain current as a function of gate 2 voltage;
typical values; see Fig.18.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.18.
MLB946
10 2
handbook, halfpage
MLB947
10 3
ϕ rs
(deg)
y rs
(µS)
y is
(mS)
ϕ rs
10 2
10
10 3
10 2
b is
y rs
10
1
10
g is
10 1
10
102
f (MHz)
10
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.14 Input admittance as a function of frequency;
typical values.
1995 Apr 25
1
1
10 3
Fig.15 Reverse transfer admittance and phase as
a function of frequency; typical values.
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
MLB948
10 2
MLB949
10 2
y fs
y fs
BF909; BF909R
10
handbook, halfpage
yos
(mS)
ϕ fs
bos
(deg)
(mS)
1
ϕfs
10
gos
10
10 1
10 2
10
1
1
10
102
10 3
f (MHz)
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
102
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.17 Output admittance as a function of
frequency; typical values.
VAGC
R1
10 k Ω
C1
4.7 nF
R GEN
50 Ω
R2
50 Ω
C3
R3
10 Ω
C2
DUT
4.7 nF
C5
2.2
pF
R G1
12 pF
L1
≈ 350 nH
RL
50 Ω
C4
4.7 nF
VI
VGG
VDS
Fig.18 Cross-modulation test set-up.
1995 Apr 25
f (MHz)
8
MLD151
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table 1
f
(MHz)
BF909; BF909R
Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
s21
s11
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.985
−6.4
4.064
172.3
0.001
86.9
0.985
−3.2
100
0.978
−12.6
3.997
164.9
0.002
82.7
0.982
−6.4
200
0.957
−25.0
3.886
150.8
0.005
74.3
0.973
−12.6
300
0.931
−36.5
3.682
137.3
0.006
68.9
0.960
−18.6
400
0.899
−47.6
3.484
123.8
0.007
59.6
0.947
−24.2
500
0.868
−57.4
3.260
111.7
0.007
57.9
0.936
−29.6
600
0.848
−66.6
3.053
101.0
0.006
58.5
0.927
−34.8
700
0.816
−74.6
2.829
90.3
0.005
65.5
0.919
−39.8
800
0.792
−82.2
2.652
79.9
0.005
83.3
0.913
−44.6
900
0.772
−89.3
2.470
69.5
0.005
114.9
0.910
−49.5
1000
0.754
−95.6
2.328
59.5
0.006
138.7
0.909
−54.6
Table 2
Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
800
2.00
0.603
67.71
1995 Apr 25
9
rn
0.581
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
PACKAGE OUTLINES
handbook, full pagewidth
3.0
2.8
0.150
0.090
0.75
0.60
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
2.5
max
1.4
1.2
o
10
max
1
1.1
max
o
30
max
2
0
0.1
0.88
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.19 SOT143.
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.40
0.25
B
1.9
3
4
0.1
max
o
10
max
0.2 M A
A
1.4
1.2
o
2.5
max
10
max
2
1.1
max
o
30
max
1
0.48
0.38
0.88
0.78
1.7
0.1 M B
TOP VIEW
Dimensions in mm.
Fig.20 SOT143R.
1995 Apr 25
10
MBC844
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 25
11
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