ESD5VLC1 Bi-directional ESD diode Mechanical Data Notes Dice size AX=AY:210um,BX=BY:85um Wafer size 4” Chip Thickness 138um±12um Scribe line width 40um Top metal Al for wire bonding, d=2.2um±0.2um Back side metal Ti-Ni-Ag for soldering Parameter Reverse stand-off voltage Symbol Conditions VRWM Value Unit 5.0 V Peak pulse power Ppp Tp=8/20us 35 W Peak pulse current IPP Tp=8/20us 2.0 A VESD IEC61000-4-2 Level 4 ± 15(AIR) Electrostatic discharge Max.junction temp. ± 8(Contact) +150 Tj KV ℃ Characteristics TA=25℃ Parameter Symbol Condition Min. VBR IT=1mA 5.6 Reverse leakage current IR Clamping Voltage Diode capacitance pin1 to 2 Breakdown voltage Typ. Max. Unit 9.4 V VR=5V 0.09 uA VC IPP=1A IPP=2A 10.0 13.0 V Cj VR=0V f=1MHZ 3.5 pf 3.0 Notes: (1)sampling testing:no bad dice inking/guaranteed good die >93% (2)Testing follow customer (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608A8-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583