IXGH36N60B3D1 GenX3TM 600V IGBT w/ Diode VCES = 600V IC110 = 36A VCE(sat) ≤ 1.8V Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 36 A IF110 TC = 110°C 30 A ICM TC = 25°C, 1ms 200 A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 80 VCE ≤ VCES A PC TC = 25°C 250 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C z 300 260 °C °C 1.13/10 Nm/lb.in. 6 g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applications z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V TJ =125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 1.5 z z z V z 5.0 V z 300 μA 1.75 mA ±100 nA 1.8 V z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99903B(07/09) IXGH36N60B3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 IC = 30A, VCE = 10V, Note 1 Cies VCE = 25V, VGE = 0V, f = 1MHz Coes Cres Qg TO-247 Outline (IXGH) 42 S 2280 pF 120 pF 32 pF 80 nC 12 nC Qgc 36 nC td(on) 19 ns tri 24 ns 0.54 mJ Qge IC = 30A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°°C Eon IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 5Ω 125 200 ns 100 160 ns Eoff 0.8 1.5 mJ td(on) 19 tfi tri Inductive Load, TJ = 125°°C Eon IC = 30A, VGE = 15V td(off) VCE = 400V, RG = 5Ω tfi Eoff ns 26 ns 0.9 mJ 180 ns 170 ns 1.5 mJ 0.50 °C/W RthJC RthCS ∅P Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC °C/W 0.21 Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM IF = 30A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 2.8 1.7 TJ = 150°C IF = 30A, VGE = 0V, -diF/dt = 100A/μs, TJ= 100°C V V 6 A 25 ns 100 ns VR = 100V trr IF = 1A, -diF/dt =100A/μs, VR = 30V TJ= 100°C 0.9 °C/W RthJC Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH36N60B3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 60 VGE = 15V 13V 11V 9V 55 50 240 210 40 35 IC - Amperes IC - Amperes 45 VGE = 15V 13V 11V 270 7V 30 25 20 9V 180 150 120 7V 90 15 10 60 5V 5 30 0 0 0.0 0.4 0.8 1.2 1.6 2.0 5V 2.4 0 2 4 Fig. 3. Output Characteristics @ 125ºC 10 12 14 1.35 VGE = 15V 13V 11V 9V 50 45 1.25 40 35 7V 30 25 20 15 10 1.20 1.05 C = 30A I C = 15A 0.95 0.80 1.6 I 1.00 0.85 1.2 = 60A 1.10 0 0.8 C 1.15 5 0.4 I 0.90 5V 0.0 VGE = 15V 1.30 VCE(sat) - Normalized 55 IC - Amperes 8 Fig. 4. Dependence of VCE(sat) on Junction Temperature 60 2.0 -50 2.4 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 240 3.8 3.6 3.4 200 3.2 180 I 2.6 2.4 C IC - Amperes 2.8 TJ = - 40ºC 25ºC 125ºC 220 TJ = 25ºC 3.0 VCE - Volts 6 VCE - Volts VCE - Volts = 60A 30A 15A 2.2 160 140 120 100 80 2.0 60 1.8 1.6 40 1.4 20 1.2 0 5 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGH36N60B3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 90 TJ = - 40ºC 80 70 125ºC 50 I C = 30A I G = 10mA 12 25ºC 60 VGE - Volts g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 30 60 90 120 150 180 210 0 240 10 20 30 50 60 70 80 90 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 90 f = 1 MHz 80 70 Cies 1,000 IC - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs IC - Amperes Coes 60 50 40 30 100 Cres 5 10 15 20 25 30 35 TJ = 125ºC 10 RG = 5Ω dV / dt < 10V / ns 0 100 10 0 20 40 150 200 250 VCE - Volts 300 350 400 450 500 550 600 650 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_36N60B3(55) 5-05-08-C IXGH36N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 4.5 4.0 C I C = 30A 1.6 VCE = 400V 2.8 1.4 2.4 1.2 2.0 1.0 1.6 0.8 TJ = 25ºC 1.2 1.2 0.6 1.0 0.8 0.8 0.4 0.5 0.4 0.4 0.2 0.0 100 110 120 0.0 I C = 15A 0 10 20 30 40 50 60 70 80 90 0.0 15 20 25 30 RG - Ohms 35 40 45 50 55 60 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.0 2.0 320 1100 tf td(off) - - - - 3.6 1.8 300 3.2 1.6 280 1.4 260 800 240 700 ---- 2.0 RG = 5Ω , VGE = 15V 1.6 VCE = 400V 1.0 I C = 30A 0.8 65 75 85 95 105 115 160 300 0.2 140 200 0.0 125 120 0 10 20 30 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 220 td(off) - - - - 200 RG = 5Ω , VGE = 15V 210 190 VCE = 400V 200 220 170 150 160 140 150 TJ = 25ºC 140 120 130 110 120 100 110 90 100 35 40 45 100 100 110 120 50 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 55 60 td(off) - - - - 190 RG = 5Ω , VGE = 15V 210 t f - Nanoseconds 180 160 30 90 180 VCE = 400V 195 170 180 160 165 I C 150 = 30A, 60A 150 140 135 130 120 120 105 I C 110 = 15A 90 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 100 125 t d(off) - Nanoseconds 190 TJ = 125ºC 25 80 200 tf 225 t d(off) - Nanoseconds 180 20 70 240 230 tf 15 60 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 210 130 50 RG - Ohms TJ - Degrees Centigrade 170 600 0.4 I C = 15A 55 = 15A, 30A, 60V 400 0.4 45 C 500 0.8 35 I 180 0.6 25 220 200 1.2 0.0 t f - Nanoseconds Eon - MilliJoules Eoff 1.2 on 2.4 900 VCE = 400V = 60A E 2.8 C 1000 TJ = 125ºC, VGE = 15V t d(off) - Nanoseconds I Eoff - MilliJoules TJ = 125ºC 1.5 0.0 t f - Nanoseconds 1.8 RG = 5Ω , VGE = 15V - MilliJoules 1.6 ---- on 2.0 VCE = 400V Eon E TJ = 125ºC , VGE = 15V 2.4 --- - MilliJoules 2.5 Eon - on Eoff 2.0 Eoff 3.2 2.8 = 60A 3.0 2.0 3.2 3.6 Eoff - MilliJoules I 4.0 E Eoff - MilliJoules 3.5 3.6 IXGH36N60B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tr 135 td(on) - - - - TJ = 125ºC, VGE = 15V 120 60 100 55 90 50 90 70 t r - Nanoseconds 80 I 75 C = 15A, 30A, 60A 60 t d(on) - Nanoseconds 105 25 tr td(on) - - - - 24 RG = 5Ω , VGE = 15V 23 VCE = 400V 45 22 TJ = 125ºC 40 21 35 20 60 50 45 40 30 30 20 17 15 20 15 16 0 10 100 110 120 10 0 10 20 30 40 50 60 70 80 90 30 19 TJ = 25ºC 25 15 15 RG - Ohms 18 t d(on) - Nanoseconds VCE = 400V 110 t r - Nanoseconds 150 20 25 30 35 40 45 50 55 60 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 27 60 26 tr 55 t r - Nanoseconds I C = 60A 45 25 RG = 5Ω , VGE = 15V 24 VCE = 400V 23 40 22 35 21 30 20 I C = 30A 25 19 20 18 I 15 C = 15A t d(on) - Nanoseconds 50 td(on) - - - - 17 10 16 5 25 35 45 55 65 75 85 95 105 115 15 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_36N60B3(55) 5-05-08-C IXGH36N60B3D1 DIODE CURVES 60 A 1000 nC 50 IF 800 Qr 600 25 IF= 60A IF= 30A IF= 15A IRM 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 TVJ= 100°C VR = 300V 0 1 2 5 0 100 3 V A/μs 1000 -diF/dt VF Fig. 22. Reverse recovery charge Qr versus -diF/dt Fig. 21. Forward current IF versus VF 2.0 90 Kf 200 400 600 A/μs 800 1000 -diF/dt Fig. 23. Peak reverse current IRM versus -diF/dt 1.00 TVJ= 100°C V IF = 30A μs V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 VFR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. ,I I Fig.24. 20.Dynamic Dynamicparameters parametersQQ r r,RM RM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 0.00 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt 1 K/W Constants for ZthJC calculation: i 1 2 3 0.1 Z thJC Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 s t 1 Fig. 27. Transient thermal resistance junction to case © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_36N60B3(55) 5-05-08-C