ON MBR0540T1 0511 Surface mount schottky power rectifier sod−123 power surface mount package Datasheet

MBR0540T1, MBR0540T3
Surface Mount
Schottky Power Rectifier
SOD−123 Power Surface Mount Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as a free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package.
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SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 40 VOLTS
Features
•
•
•
•
•
Guardring for Stress Protection
Very Low Forward Voltage
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
Pb−Free Packages are Available
SOD−123
CASE 425
STYLE 1
Mechanical Characteristics
•
•
•
•
•
•
•
•
Reel Options: 3,000 per 7 inch reel/8 mm tape
Reel Options: 10,000 per 13 inch reel/8 mm tape
Device Marking: B4
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C max. for 10 Seconds
MARKING DIAGRAM
B4 MG
G
B4 = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBR0540T1
SOD−123
3000/Tape & Reel
MBR0540T1G
SOD−123
(Pb−Free)
3000/Tape & Reel
MBR0540T3
SOD−123
10,000/Tape & Reel
MBR0540T3G
SOD−123
(Pb−Free)
10,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 6
1
Publication Order Number:
MBR0540T1/D
MBR0540T1, MBR0540T3
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TC = 115°C)
IO
0.5
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 115°C)
IFRM
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave,
Single Phase, 60 Hz)
IFSM
5.5
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
dv/dt
1000
V/ms
Storage/Operating Case Temperature Range
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Symbol
Value
Unit
Rtjl
Rtja
118
206
°C/W
ELECTRICAL CHARACTERISTICS
vF
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 0.5 A)
(iF = 1 A)
IR
Maximum Instantaneous Reverse Current (Note 3)
(VR = 40 V)
(VR = 20 V)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
TJ = 25°C
TJ = 100°C
0.51
0.62
0.46
0.61
TJ = 25°C
TJ = 100°C
20
10
13,000
5,000
V
mA
100
10
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR0540T1, MBR0540T3
25°C
1.0
TJ = −40°C
TJ = 125°C
TJ = 25°C
TJ = 100°C
0.1
0.4
0.2
0.6
0.8
1.2
1.0
TJ = 125°C
TJ = 100°C
TJ = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.2
100E−3
I R, MAXIMUM REVERSE CURRENT (AMPS)
I R, REVERSE CURRENT (AMPS)
1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E−3
10E−3
TJ = 125°C
1.0E−3
10E−3
TJ = 100°C
1.0E−3
100E−6
100E−6
TJ = 100°C
10E−6
1.0E−6
100E−9
10
TJ = 25°C
0
10
20
40
30
10E−6
TJ = 25°C
1.0E−6
100E−9
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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3
40
0.8
PFO , AVERAGE POWER DISSIPATION (WATTS)
I O , AVERAGE FORWARD CURRENT (AMPS)
MBR0540T1, MBR0540T3
dc
0.7
FREQ = 20 kHz
SQUARE WAVE
0.6
0.5
Ipk/Io = p
0.4
Ipk/Io = 5
0.3
Ipk/Io = 10
0.2
Ipk/Io = 20
0.1
0
0
40
20
60
80
100
120
SQUARE WAVE
0.35
dc
Ipk/Io = p
0.30
Ipk/Io = 5
0.25
Ipk/Io = 10
0.20
Ipk/Io = 20
0.15
0.10
0.05
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
TJ , DERATED OPERATING TEMPERATURE ( °C)
C, CAPACITANCE (pF)
TJ = 25°C
10
5.0
0.40
140
100
0
0.45
10
15
20
25
30
35
40
0.8
126
124
Rtja = 118°C/W
122
120
118
149°C/W
116
180°C/W
114
206°C/W
112
110
228°C/W
0
5.0
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ = TJmax − r(t)(Pf + Pr) where
TJ may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as
TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed.
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4
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBR0540T1, MBR0540T3
1E+00
50%
20%
1E−01
10%
5.0%
2.0%
1.0%
1E−02
Rtjl(t) = Rtjl*r(t)
1E−03
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1,000
10
100
1,000
T, TIME (s)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 9. Thermal Response Junction to Lead
1E+00
50%
1E−01
20%
10%
5.0%
2.0%
1E−02
1.0%
Rtjl(t) = Rtjl*r(t)
1E−03
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
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5
MBR0540T1, MBR0540T3
PACKAGE DIMENSIONS
SOD−123
PLASTIC
CASE 425−04
ISSUE C
A
ÂÂÂ
ÂÂÂ
ÂÂÂ
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
1
K
INCHES
MIN
MAX
0.055
0.071
0.100
0.112
0.037
0.053
0.020
0.028
0.004
−−−
0.000
0.004
−−−
0.006
0.140
0.152
DIM
A
B
C
D
E
H
J
K
B
MILLIMETERS
MIN
MAX
1.40
1.80
2.55
2.85
0.95
1.35
0.50
0.70
0.25
−−−
0.00
0.10
−−−
0.15
3.55
3.85
E
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
J
D
SOLDERING FOOTPRINT*
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉ
ÉÉÉ
ÉÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR0540T1/D
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