Microsemi MRF5812R1 Rf & microwave discrete low power transistor Datasheet

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5812, R1, R2
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
Low Noise - 2.5 dB @ 500 MHZ
•
Associated Gain = 15.5 dB @ 500 MHz
•
Ftau - 5.0 GHz @ 10v, 75mA
•
Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
15
Unit
Vdc
VCBO
VEBO
Collector-Base Voltage
30
Vdc
Emitter-Base Voltage
2.5
Vdc
IC
Collector Current
200
mA
1.25
10
Watts
mW/ ºC
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
MSC1319.PDF 10-25-99
MRF5812, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Test Conditions
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
15
-
-
Vdc
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
50
200
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Value
Min.
Typ.
Max.
Unit
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
1.4
2.0
pF
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz
MSC1319.PDF 10-25-99
MRF5812, R1, R2
FUNCTIONAL
Symbol
NFmin
G
NF
G
U max
MSG
2
|S21|
Test Conditions
Value
Min.
Typ.
Max.
Unit
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
-
2.0
3.0
dB
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
13
15.5
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
17.8
-
dB
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
20
-
dB
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
-
15
-
dB
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
100
.579
-141
24
107
.024
49
.397
-76
300
.593
-173
8.93
85
.045
66
.233
-103
500
.598
175
5.14
74
.066
69
.248
-110
1000
.592
158
2.64
52
.132
72
.347
-119
2000
.615
115
1.55
20
.310
63
.531
-141
3000
.691
72
1.10
-5
.518
41
.648
-172
MSC1319.PDF 10-25-99
∠φ
MRF5812, R1, R2
Ftau (MHz)
Ccb(pF)
BVCEO
IC max (mA)
Gu Max (dB)
Freq (MHz)
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Type
Device
Package
IC max (mA)
BVCEO
Efficiency (%)
GPE VCC
GPE (dB)
Type
GPE Freq (MHz)
(MHz)
Pout (watts)
Device
Package
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
SO-8
MRF4427, R2
NPN 175
0.15
18
60
12
20
400
TO-39
2N5109
NPN
200
3
10
15
12
1200
20
400
TO-39
2N4427
NPN 175
1
10
50
12
20
400
TO-39
MRF5943C
NPN
200
3.4
30
15
11.4
1000
30
400
POWER MACRO
MRF553
NPN 175
1.5
11.5
60
12.5
16
500
SO-8
MRF5943, R1, R2
NPN
200
3.4
30
15
15
1300
30
400
TO-72
2N5179
NPN
200
4.5
1.5
6
17
900
1
12
50
POWER MACRO
MRF553T
NPN 175
1.5
11.5
50
12.5
16
500
TO-72
2N2857
NPN
300
5.5
50
6
13
1600
1
15
40
MRF607
NPN 175
1.75
11.5
50
12.5
16
330
TO-39
MRF517
NPN
300
7.5
50
15
5.5
4600
3
25
150
3
7.8
50
12.5
18
1000
TO-72
11
6
12
50
TO-39
TO-39
2N6255
NPN 175
TO-72
2N5179
NPN 200
MA C R O X
MRF559
20
NPN 5 1 2
0.5
10
65
7.5
16
150
NPN
450
1.5
5
6
2N6304
NPN
450
5
2
5
BFR91
NPN
500
1.9
2
5
MACRO T
BFR96
NPN
500
2
10
10
11
4000
1
15
30
14
1400
1
15
50
16.5
5000
1
12
35
14.5
500
2.6
15
100
SO-8
MRF5812, R1, R2
NPN
500
2
50
10
15.5
17.8
5000
15
200
MACRO X
MRF581A
NPN
500
2
50
10
14
15
5000
15
200
Macro
BFR90
NPN
500
2.4
2
10
15
18
5000
15
30
400
TO-72
BFY90
NPN
500
2.5
2
5
20
1300
15
50
TO-72
MRF914
NPN
500
2.5
5
10
15
4500
12
40
MA C R O X
MRF559
NPN 5 1 2
0.5
13
60
12.5
16
150
TO-39
2N3866A
NPN 4 0 0
1
10
45
28
30
400
M R F 3 8 6 6 , R 1 , R 2 NPN 4 0 0
1
10
45
28
30
SO-8
MRF904
TO-72
MACRO T
P O W ER MA C R O
MRF555
NPN 4 7 0
1.5
11
50
12.5
16
400
P O W ER MA C R O
MRF555T
NPN 4 7 0
1.5
11
50
12.5
16
400
MA C R O X
MRF559
NPN 8 7 0
0.5
6.5
70
7.5
16
150
MA C R O X
MRF559
NPN 8 7 0
0.5
9.5
65
12.5
16
150
SO-8
MRF8372,R1,R2
NPN 8 7 0
0.75
8
55
12.5
16
200
P O W ER MA C R O
MRF557
NPN 8 7 0
1.5
8
55
12.5
16
400
P O W ER MA C R O
MRF557T
NPN 8 7 0
1.5
8
55
12.5
16
400
MRF581
NPN
500
2.5
50
10
15
17.8
5000
16
200
TO-39
MRF586
NPN
500
3
90
15
11
14.5
4500
2.2
17
200
MACRO X
MRF951
NPN
1000
1.3
5
6
14
17
MACRO X
MRF571
NPN
1000
1.5
10
6
10
MACRO T
BFR91
NPN
1000
2.5
2
5
8
MACRO T
BFR90
NPN
1000
3
2
10
10
TO-39
MRF545
TO-39
MRF544
8000
0.45
10
100
8000
1
10
70
11
5000
1
12
35
12.5
5000
1
15
30
PNP
14
1400
2
70
400
NPN
13.5
1500
70
400
RF (LNA / General Purpose) Selection Guide
RF Low Pow
1
1
8
1
3
MSC1319.PDF 10-25-99
1
MACRO X
RF (Low Power PA / General Purpose) Selection Guide
2
3.5
4
2
4
3
3
1
4
MRF5812, R1, R2
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
MSC1319.PDF 10-25-99
8.
5.
1.
4.
5. EMITTER
6. BASE
7. BASE
8. EMITTER
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