ACE ACE8810B Common drain n-channel enhancement mode field effect transistor with esd protection Datasheet

ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain
configuration.
Features






VDS(V)=20
ID=7A (VGS=4.5V)
RDS(ON)<21Ω (VGS=4.5V)
RDS(ON)<25Ω (VGS=2.5V)
RDS(ON)<33Ω (VGS=1.8V)
ESD Protected: 2,000V
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDS
20
V
VGS
±8
V
Gate-Source Voltage
O
Drain Current (Continuous) *AC
TA=25 C
O
TA=70 C
Drain Current (Pulse) *B
ID
IDM
O
Power Dissipation(1)
TA=25 C
O
TA=70 C
Operating and Storage Temperature Range
PD
7
5.6
A
30
1.5
1
TJ,TSTG -55 to 150
W
O
C
Packaging Type
TSSOP-8
VER 1.2
1
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE8810B XX + H
Halogen - free
Pb - free
TM : TSSOP-8
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Gate Leakage Current
IGSS
VGS=±8V, VDS=0V
Static Drain-Source On-Resistance
RDS(ON)
20
V
1
uA
±3.5
±10
uA
VGS=4.5V, ID=8A
14
21
VGS=2.5V, ID=7A
17
25
VGS=1.8V, ID=6A
22
33
0.5
1
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.4
Forward Transconductance
gFS
VDS=5V, ID=6.5A
13
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
VSD
ISD=2.5A, VGS=0V
0.79
IS
mΩ
V
S
1.6
V
2.5
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=10V, ID=8A
VGS=4.5V
VDS=10V, VGS=5V
RGEN=3Ω, RL=1.5Ω
13.8
17.94
4.1
5.33
5.6
7.28
6.2
12.4
12.7
25.4
51.7
103.4
16
32
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V
f=1MHz
1160
104
pF
29
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
VER 1.2
3
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
VER 1.2
4
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Packing Information
TSSOP-8
Unit: mm
VER 1.2
5
ACE8810B
Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
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